2009-08-19 rev.2.3 page 1 IDP18E120 fast switching diode product summary v rrm 1200 v i f 18 a v f 1.65 v t j max 150 c pin 1 pin 2 pin 3 c a - marking d18e120 type package ordering code IDP18E120 - maximum ratings , at t j = 25 c, unless otherwise specified parameter symbol value unit repetitive peak reverse voltage v rrm 1200 v continous forward current t c =25c t c =90c i f 31 19.8 a surge non repetitive forward current t c =25c, t p =10 ms, sine halfwave i fsm 78 maximum repetitive forward current t c =25c, t p limited by t jmax , d =0.5 i frm 47 power dissipation t c =25c t c =90c p tot 113 54 w operating and storage temperature t j , t st g -55...+150 c soldering temperature wavesoldering, 1.6mm (0.063 in.) from case for 10s t s 260 c features ? 1200 v diode technology ? fast recovery ? soft switching ? low reverse recovery charge ? low forward voltage ? easy paralleling ? pb-free lead plating; rohs compliant ? halogen-free according to iec61249-2-21 ? qualified according to jedec for target applications pg-to220-2 pg-to220-2
2009-08-19 rev.2.3 page 2 IDP18E120 thermal characteristics parameter symbol values unit min. typ. max. characteristics thermal resistance, junction - case r thjc - - 1.1 k/w thermal resistance, junction - ambient, leaded r thja - - 62 smd version, device on pcb: @ min. footprint @ 6 cm 2 cooling area 1) r thja - - - 35 62 - electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. static characteristics reverse leakage current v r =1200v, t j =25c v r =1200v, t j =150c i r - - - - 100 1400 a forward voltage drop i f =18a, t j =25c i f =18a, t j =150c v f - - 1.65 1.7 2.15 - v 1 device on 40mm*40mm*1.5mm epoxy pcb fr4 with 6cm2 (one layer, 70 m thick) copper area for drain connection. pcb is vertical without blown air.
2009-08-19 rev.2.3 page 3 IDP18E120 electrical characteristics , at t j = 25 c, unless otherwise specified parameter symbol values unit min. typ. max. dynamic characteristics reverse recovery time v r =800v, i f =18a, d i f /d t =800a/s, t j =25c v r =800v, i f =18a, d i f /d t =800a/s, t j =125c v r =800v, i f =18a, d i f /d t =800a/s, t j =150c t rr - - - 195 280 300 - - - ns peak reverse current v r =800v, i f = 18 a, d i f /d t =800a/s, t j =25c v r =800v, i f =18a, d i f /d t =800a/s, t j =125c v r =800v, i f =18a, d i f /d t =800a/s, t j =150c i rrm - - - 20.2 24.4 25.3 - - - a reverse recovery charge v r =800v, i f =18a, d i f /d t =800a/s, t j =25c v r =800v, i f =18a, d i f /d t =800a/s, t j =125c v r =800v, i f =18a, d i f /d t =800a/s, t j =150c q rr - - - 1880 3200 3540 - - - nc reverse recovery softness factor v r =800v, i f =18a, d i f /d t =800a/s, t j =25c v r =800v, i f =18a, d i f /d t =800a/s, t j =125c v r =800v, i f =18a, d i f /d t =800a/s, t j =150c s - - - 5.5 6.6 6.7 - - -
2009-08-19 rev.2.3 page 4 IDP18E120 2 diode forward current i f = f( t c ) parameter: t j 150c 25 50 75 100 c 150 t c 0 5 10 15 20 25 a 35 i f 1 power dissipation p tot = f ( t c ) parameter: t j 150c 25 50 75 100 c 150 t c 0 10 20 30 40 50 60 70 80 90 100 w 120 p tot 3 typ. diode forward current i f = f ( v f ) 0 0.5 1 1.5 2 v 3 v f 0 6 12 18 24 30 36 42 a 54 i f -55c 25c 100c 150c 4 typ. diode forward voltage v f = f ( t j ) -60 -20 20 60 100 c 160 t j 1.2 1.4 1.6 1.8 2 2.2 v 2.6 v f 36a 18a 9a
2007-08-19 rev.2.3 page 5 IDP18E120 5 typ. reverse recovery time t rr = f (d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 100 200 300 400 500 600 700 800 ns 1000 t rr 36a 18a 9a 6 typ. reverse recovery charge q rr = f (d i f /d t ) parameter: v r = 800v, t j = 125 c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 1800 2000 2200 2400 2600 2800 3000 3200 3400 3600 3800 4000 4200 nc 4600 q rr 36a 9a 18a 7 typ. reverse recovery current i rr = f (d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 5 10 15 20 a 30 i rr 36a 18a 9a 8 typ. reverse recovery softness factor s = f(d i f /d t ) parameter: v r = 800v, t j = 125c 200 300 400 500 600 700 800 a/s 1000 d i f /d t 2 4 6 8 10 12 14 18 s 36a 18a 9a
2009-08-19 rev.2.3 page 6 IDP18E120 9 max. transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 10 k/w IDP18E120 z thjc single pulse 0.01 0.02 0.05 0.10 0.20 d = 0.50
2009-08-19 rev.2.3 page 7 t o - 220- 2 idp 18e120
2009-08-19 rev.2.3 page 8 IDP18E120 pu b l i s h e d b y i n fi n e o n t e c h n o l o g i e s a g 8 1 7 2 6 m u n i c h , g e r m a n y 8 1 7 2 6 m n c h e n , g e r m a n y ? 2 0 0 9 i n fi n e o n t e c h n o l o g i e s a g a l l r i g h ts r e s e r v e d . l e g a l d i s c l a i m e r t h e i n f o rm a t i o n g i v e n i n t h i s d o c u m e n t s h a l l i n n o e v e n t b e re g a rd e d a s a g u a ra n t e e o f c o n d i t i o n s o r c h a ra c t e ri s t i c s . w i t h re s p e c t t o a n y e x a m p l e s o r h i n t s g i v e n h e re i n , a n y t y p i c a l v a l u e s s t a t e d h e re i n a n d / o r a n y i n f o rm a t i o n re g a rd i n g t h e a p p l i c a t i o n o f t h e d e v i c e , i n f i n e o n t e c h n o l o g i e s h e re b y d i s c l a i m s a n y a n d a l l w a rra n t i e s a n d l i a b i l i t i e s o f a n y k i n d , i n c l u d i n g w i t h o u t l i m i t a t i o n , w a rra n t i e s o f n o n -i n f ri n g e m e n t o f i n t e l l e c t u a l p ro p e rt y ri g h t s o f a n y t h i rd p a rt y . i n fo r m a ti o n f o r f u rt h e r i n f o rm a t i o n o n t e c h n o l o g y , d e l i v e ry t e rm s a n d c o n d i t i o n s a n d p ri c e s , p l e a s e c o n t a c t t h e n e a re s t i n f i n e o n t e c h n o l o g i e s o f f i c e (w w w . i n f i n e o n . c o m ). w a r n i n g s d u e t o t e c h n i c a l re q u i re m e n t s , c o m p o n e n t s m a y c o n t a i n d a n g e ro u s s u b s t a n c e s . f o r i n f o rm a t i o n o n t h e t y p e s i n q u e s t i o n , p l e a s e c o n t a c t t h e n e a re s t i n f i n e o n t e c h n o l o g i e s o f f i c e . i n f i n e o n t e c h n o l o g i e s c o m p o n e n t s m a y b e u s e d i n l i f e -s u p p o rt d e v i c e s o r s y s t e m s o n l y w i t h t h e e x p re s s w ri t t e n a p p ro v a l o f i n f i n e o n t e c h n o l o g i e s , i f a f a i l u re o f s u c h c o m p o n e n t s c a n re a s o n a b l y b e e x p e c t e d t o c a u s e t h e f a i l u re o f t h a t l i f e -s u p p o rt d e v i c e o r s y s t e m o r t o a f f e c t t h e s a f e t y o r e f f e c t i v e n e s s o f t h a t d e v i c e o r s y s t e m . l i f e s u p p o rt d e v i c e s o r s y s t e m s a re i n t e n d e d t o b e i m p l a n t e d i n t h e h u m a n b o d y o r t o s u p p o rt a n d / o r m a i n t a i n a n d s u s t a i n a n d / o r p ro t e c t h u m a n l i f e . i f t h e y f a i l , i t i s re a s o n a b l e t o a s s u m e t h a t t h e h e a l t h o f t h e u s e r o r o t h e r p e rs o n s m a y b e e n d a n g e re d .
|
