ntr0202pl features ? low r ds(on) provides higher efficiency and extends battery life r dson = 0.80 , v gs = ?10 v r dson = 1.10 , v gs = ?4.5 v ? miniature sot?23 surface mount package saves board space ? pb?free package is available applications ? dc?dc converters ? computers ? printers ? pcmcia cards ? cellular and cordless telephones maximum ratings (t j = 25 c unless otherwise noted) rating symbol value unit drain?to?source voltage v dss ?20 v gate?to?source voltage ? continuous v gs 20 v continuous drain current @ t a = 25 c pulsed drain current (t p 10 s) i d i dm ?0.4 ?1.0 a total power dissipation @ t a = 25 c (note 1) p d 225 mw operating and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ? junction?to?ambient r ja 556 c/w maximum lead temperature for soldering purposes, 1/8 from case for 10 s t l 260 c maximum ratings are those values beyond which device damage can occur. maximum ratings applied to the device are individual stress limit values (not normal operating conditions) and are not valid simultaneously. if these limits are exceeded, device functional operation is not implied, damage may occur and reliability may be affected. 1. pulse test: pulse width 300 s, duty cycle 2%. d g s device package shipping 2 ordering information NTR0202PLT1 sot?23 3000 tape & reel p?channel ntr0202plt3 sot?23 10,000 tape & reel ?20 v 550 m @ ?10 v r ds(on) typ ?400 ma i d max v (br)dss sot?23 case 318 style 21 marking diagram/ pin assignment 2 pl = specific device code w = work week 3 1 3 drain 1 gate 2 source plw ntr0202plt3g sot?23 (pb?free) 10,000 tape & reel NTR0202PLT1g sot?23 (pb?free) 3000 tape & reel 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com product specification
electrical characteristics (t a = 25 c unless otherwise noted) characteristic symbol min typ max unit off characteristics drain?to?source breakdown voltage (v gs = 0 v, i d = ?10 a) (positive temperature coefficient) v (br)dss ?20 33 v mv/ c zero gate voltage drain current (v ds = ?20 v, v gs = 0 v, t j = 25 c) (v ds = ?20 v, v gs = 0 v, t j = 150 c) i dss ?1.0 ?10 a gate?body leakage current (v gs = 20 v, v ds = 0 v) i gss 100 na on characteristics (note 2) gate threshold voltage (v ds = v gs , i d = ?250 a) (negative temperature coefficient) v gs(th) ?1.1 ?1.9 3.0 ?2.3 v mv/ c static drain?to?source on?resistance (v gs = ?10 v, i d = ?200 ma) (v gs = ?4.5 v, i d = ?50 ma) r ds(on) 0.55 0.80 0.80 1.10 forward transconductance (v ds = ?10 v, i d = ?200 ma) g fs 0.5 mhos dynamic characteristics input capacitance c iss 70 pf output capacitance (v ds = ?5.0 v, v gs = 0 v, f = 1.0 mhz ) c oss 74 reverse transfer capacitance f = 1 . 0 mhz) c rss 26 switching characteristics (note 3) turn?on delay time t d(on) 3.0 ns rise time (v dd = ?15 v, i d = ?200 ma, t r 6.0 turn?off delay time (v dd = ?15 v , i d = ?200 ma , v gs = ?10 v, r g = 6.0 ) t d(off) 18 fall time t f 4 total gate charge q tot 2.18 nc gate?source charge (v ds = ?15 v, i d = ?200 ma, v gs = ?10 v ) q gs 0.41 gate?drain charge v gs = ? 10 v) q gd 0.40 body?drain diode characteristics (note 2) diode forward voltage (note 2) (i s = ?400 ma, v gs = 0 v) (i s = ?400 ma, v gs = 0 v, t j = 150 c) v sd ?0.8 ?0.65 ?1.0 v reverse recovery time t rr 11.8 ns (i s = ?1.0 a, v gs = 0 v, di s /dt = 100 a/ s ) t a 9 di s /dt = 100 a/ s) t b 3 reverse recovery stored charge (i s = ?1.0 a, v gs = 0 v, di s /dt = 100 a/ s) q rr 0.007 c 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperature. 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com ntr0202pl product specification
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