smd type smd type 2.3 0.60 +0.1 -0.1 6.50 +0.15 -0.15 1.50 +0.15 -0.15 0.80 +0.1 -0.1 4.60 +0.15 -0.15 0.50 +0.15 -0.15 9.70 +0.2 -0.2 5.30 +0.2 -0.2 2.30 +0.1 -0.1 0.50 +0.8 -0.7 5.55 +0.15 -0.15 2.65 +0.25 -0.1 1.50 +0.28 -0.1 0.127 max 3 .8 0 to-252 unit: mm 1gate 2drain 3source 2SK3377 features low on-resistance r ds(on)1 =44m max. (v gs =10v,i d =10a) r ds(on)2 =78m max. (v gs =4.0v,i d =10a) low c iss :c iss = 760 pf typ. built-in gate protection diode absolute maximum ratings ta = 25 parameter symbol rating unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v i d 20 a i dp * 50 a power dissipation t c =25 30 t a =25 1.0 channel temperature t ch 150 storage temperature t stg -55to+150 *pw 10 s,duty cycle 1% drain current p d w electrical characteristics ta = 25 parameter symbol testconditons min typ max unit drain cut-off current i dss v ds =60v,v gs =0 10 a gate leakage current i gss v gs = 20v,v ds =0 10 a gat cutoff voltage v gs(off) v ds =10v,i d =1ma 1.5 2.0 2.5 v forward transfer admittance y fs v ds =10v,i d =10a 5 10 s r ds(on)1 v gs =10v,i d =10a 35 44 m r ds(on)2 v gs =4.0v,i d =10a 54 78 m input capacitance c iss 760 pf output capacitance c oss 150 pf reverse transfer capacitance c rss 71 pf turn-on delay time t on 13 ns rise time t r 170 ns turn-off delay time t off 43 ns fall time tf 34 ns total gate charge q g 17 nc gate to source charge q gs 3.0 nc gate to drain charge q gd 4.7 nc v ds =10v,v gs =0,f=1mhz i d =10a,v gs(on) =10v,r g =10 ,v dd =30v drain to source on-state resistance i d =20 a, v dd =48v,v gs =10v 4008-318-123 sales@twtysemi.com 1 of 1 http://www.twtysemi.com smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type smd type ic smd type smd type smd type smd type ic smd type smd type smd type smd type smd type product specification
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