KO3416 ?? featur es ?? v ds ( v) = 20v ?? i d = 6.5 a ?? r ds(on) ? 22m |? (v gs = 4.5v ) ?? r ds(on) ? 26m |? (v gs = 2.5v ) ?? r ds(on) ? 34m |? (v gs = 1.8v ) ?? absolute max im um ratings t a = 25 ?? param eter sym bol rati ng unit drain-sourc e vol tage v ds 20 v gate-s ource v olt age v gs ? 8 v conti nuous drai n current *1 t a=25 ?? 6.5 ta=70 ?? 5.2 pul sed drai n current *2 i dm 30 power diss ipat ion *1 t a=25 ?? 1.4 ta=70 ?? 0.9 therm al res is tanc e.j unct ion-t o-am bient *1 t ? 10s r | ja 90 ?? /w max im um junc ti on-to-lead *3 r | jl 60 ?? /w junc ti on and st orage tem perature range t j , t stg -55 to 150 ?? *1: t he value of r | ja is m easured with t he devic e m ounted on 1i n 2 fr-4 board w it h 2oz. copper, in a s ti ll ai r environm ent with t a =25 c. the val ue in any a given appli cat ion depends on the us er's spec if ic board desi gn. t he current rati ng is based on t he t ? 10s t herm al res is tanc e rati ng. *2: repet it ive rati ng, pul se width l im it ed by junc ti on tem perature. *3. t he r | ja is the s um of t he therm al im pedence f rom junc ti on to l ead r | jl and l ead to am bient . i d p d a w d s g 1.base 2.emitter 3.collector 1. gate 2. source 3. dra i n 0.4 +0.1 -0.05 2.9 +0.2 -0.2 0.95 +0.1 -0.1 1.9 +0.2 -0.2 2.8 +0.2 -0.2 +0.2 -0.1 0-0.1 0.38 +0.1 -0.1 1.1 +0.2 -0.1 0.55 0.4 12 3 unit: mm sot-23-3 0.1 +0.05 -0.01 1.6 s m d t y p e d i p t y p e m o s f e t s m d t y p e d i p t y p e m o s f e t s m d ty p e i c s m d ty p e t r a n s i s t o r smd t ype smd type ic dip type smd type ic dip type product specification 4008-318-123 sales@twtysemi.com 1 of 4 http://www.twtysemi.com
smd t ype ic smd t ype mosfet ?? electric al charac teris tics t a = 25 ?? param eter sym bol tes tc ondit ons mi n typ max unit drain-sourc e break dow n vol tage v dss i d =250 | a, v gs =0v 20 v v ds =16v, v gs =0v 1 v ds =16v, v gs =0v ,t j=55 ?? 5 gate-b ody leak age current i gss v ds =0v, v gs = ? 8v ? 10 | a gate t hreshol d vol tage v gs(th) v ds =v gs i d =250 | a 0.4 0.6 1 v v gs =4.5v , i d =6.5a 18 22 v gs =4.5v , i d =6.5a t j =125 ?? 25 30 v gs =2.5v , i d =5.5a 21 26 m |? v gs =1.8v , i d =5a 26 34 m |? on s tat e drain c urrent i d(on) v gs =4.5v , v ds =5v 30 a forw ard trans conduc tanc e g fs v ds =5v, i d =6.5a 29 s input capaci tanc e c is s 1160 pf output capaci tanc e c oss 187 pf reverse trans fer capac it ance c rss 146 pf gate res is tanc e r g v gs =0v, v ds =0 v, f=1 m hz 1.5 |? tot al gat e charge q g 16 nc gate s ource charge q gs 0.8 nc gate drai n charge q gd 3.8 nc turn-on delayti m e t d(on) 6.2 ns turn-on ris e tim e t r 12.7 ns turn-of f del aytim e t d(off) 51.7 ns turn-of f f all t im e t f 16 ns body diode revers e recovery tim e t rr i f =6.5a , d i /d t =100a/ | s 17.7 ns body diode revers e recovery charge q rr i f =6.5a , d i /d t =100a/ | s 6.7 nc max im um body-diode cont inuous current i s 2.5 a diode forward volt age v sd i s =1a,v gs =0v 0.76 1 v | a m |? v gs =0v, v ds =10v, f=1mhz v gs =4.5v , v ds =10v, i d =6.5a v gs =5v, v ds =10v, r l =1.5 |? ,r gen =3 |? r ds(on) st ati c drai n-sourc e on-resi st ance i dss zero gat e vol tage drain current ?? mark ing marking a08k KO3416 s m d t y p e d i p t y p e m o s f e t s m d t y p e d i p t y p e m o s f e t s m d ty p e i c s m d ty p e t r a n s i s t o r smd t ype smd type ic dip type smd type ic dip type product specification 4008-318-123 sales@twtysemi.com 2 of 4 http://www.twtysemi.com
smd t ype ic smd t ype mosfet ?? t y pical charac teris tics 0 10 20 30 012345 v ds (volts) figure 1: on-regions characteristi cs i d (a) v gs =1v v gs =1.5v v gs =2v 8v 0 5 10 15 20 0.0 0.5 1.0 1.5 2.0 2.5 v gs (volts) figure 2: transfer characteristics i d (a) 25c 125c v gs =5v 10 20 30 40 50 0 5 10 15 20 i d( a) figure 3: on-resistance vs. drain current and gate voltage r ds(on) (m ? ) v gs =4.5v v gs =2.5v v gs =1.8v 0.8 1.0 1.2 1.4 1.6 0 25 50 75 100 125 150 175 temperature (c) figure 4: on-resistance vs. junction temperature normalize on-resistance v gs =4.5v v gs =2.5v v gs =1.8v i d =6.5a 10 20 30 40 50 60 02468 v gs (volts) figure 5: on-resistance vs. gate-source voltage r ds(on) (m ? ) 25c 125c i d =6.5a 1e-05 1e-04 1e-03 1e-02 1e-01 1e+00 1e+01 0.0 0.2 0.4 0.6 0.8 1.0 v sd (volts) figure 6: body-diode characteristics i s (a) 25c 125c KO3416 s m d t y p e d i p t y p e m o s f e t s m d t y p e d i p t y p e m o s f e t s m d ty p e i c s m d ty p e t r a n s i s t o r smd t ype smd type ic dip type smd type ic dip type product specification 4008-318-123 sales@twtysemi.com 3 of 4 http://www.twtysemi.com
smd t ype ic smd t ype mosfet 0 1 2 3 4 5 0 5 10 15 20 qg (nc) figure 7: gate-charge characteristics v gs (volt s) v ds =10v i d =6.5a 0 400 800 1200 1600 2000 0 5 10 15 20 v ds (volts) figure 8: capacitance characteristics capacitance (pf ) c iss c rss c oss 0 10 20 30 40 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 10: single pulse power rating junction-to- ambient (note e) power (w) t j(max) =150c t a =25c 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 pulse width (s) figure 11: normalized maximum transient thermal impedance z ja normalized transient thermal resistance t o n t p d d=t on /t t j,pk =t a +p dm .z ja .r ja r ja =90c/w in descending order d=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 1.0 10.0 100.0 0.1 1 10 100 v ds (volts) i d (amps) figure 9: maximum forward biased safe operating area (note e) 100 s 10ms 1ms 0.1s 1s 10s dc r ds(on) limited t j(max) =150c t a =25c 10 s smd t ype ic smd t ype mosfet KO3416 s m d t y p e d i p t y p e m o s f e t s m d t y p e d i p t y p e m o s f e t s m d ty p e i c s m d ty p e t r a n s i s t o r smd t ype smd type ic dip type smd type ic dip type product specification 4008-318-123 sales@twtysemi.com 4 of 4 http://www.twtysemi.com
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