analog power AM12N65P n-channel 650-v (d-s) mosfet v ds (v) i d (a) symbol limit units v ds 650 v gs 20 continuous drain current a t c =25c i d 12 i dm 50 i s 40 a power dissipation t c =25c p d 300 w t j , t stg -55 to 175 c symbol maximum units r ja 62.5 r jc 1 notes a. calculated continuous current based on maximum allowable junction temperature. b. pulse width limited by maximum junction temperature pulsed drain current b continuous source current (diode conduction) a thermal resistance ratings c/w parameter operating junction and storage temperature range absolute maximum ratings (t a = 25c unless otherwise noted) v parameter drain-source voltage a product summary 650 r ds(on) (m) 800 @ v gs = 10v 850 @ v gs = 6v maximum junction-to-ambient a maximum junction-to-case 12 a gate-source voltage key features: ? low r ds(on) trench technology ? low thermal impedance ? fast switching speed typical applications: ? white led boost converters ? automotive systems ? industrial dc/dc conversion circuits drain connected to tab ? preliminary 1 publication order number: ds_AM12N65P_1a
analog power AM12N65P parameter symbol test conditions min typ max unit gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 ua 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na v ds = 520 v, v gs = 0 v 1 v ds = 520 v, v gs = 0 v, t j = 55c 25 on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 30 a v gs = 10 v, i d = 2 a 800 v gs = 6 v, i d = 1.6 a 850 forward transconductance a g fs v ds = 15 v, i d = 2 a 58 s diode forward voltage a v sd i s = 20 a, v gs = 0 v 0.9 v total gate charge q g 23 gate-source charge q gs 11 gate-drain charge q gd 11 turn-on delay time t d(on) 24 rise time t r 10 turn-off delay time t d(off) 60 fall time t f 11 input capacitance c iss 2691 output capacitance c oss 165 reverse transfer capacitance c rss 33 notes a. pulse test: pw <= 300us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. dynamic b ns analog power (apl) reserves the right to make changes without further notice to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. typical parameters which may be provided in apl data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. all operating parameters, including typicals must be validated for each customer application by customers technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal injury or death may occur. should buyer purchase or use apl products for any such unintended or unauthorized application, buyer shall indemnify and hold apl and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that apl was negligent regarding the design or manufacture of the part. apl is an equal opportunity/affirmative action employer. zero gate voltage drain current static ua electrical characteristics i dss m r ds(on) nc v ds = 100 v, r l = 50 , i d = 2 a, v gen = 10 v, r gen = 6 v ds = 100 v, v gs = 6 v, i d = 2 a drain-source on-resistance a pf v ds = 15 v, v gs = 0 v, f = 1 mhz ? preliminary 2 publication order number: ds_AM12N65P_1a
analog power AM12N65P 1. on-resistance vs. drain current 2. transfer characteristics 3. on-resistance vs. gate-to-source voltage 4. drain-to-source forward voltage 5. output characteristics 6. capacitance typical electrical characteristics 0.6 0.7 0.8 0.9 1 0 1 2 3 4 rds(on) - on - resistance( ) id - drain current (a) 6v 8v,10v 5.5v 0 1 2 3 4 0 1 2 3 4 id - drain current (a) vds - drain - to - source voltage (v) 10v,8v,6v 5.5v 0 1 2 3 0 2 4 6 8 10 rds(on) - on - resistance( ) vgs - gate - to - source voltage (v) tj = 25 c tj = 25 c 0 1 2 3 4 5 0 2 4 6 8 10 id - drain current (a) vgs - gate - to - source voltage (v) tj = 25 c 0.01 0.1 1 10 100 0.2 0.4 0.6 0.8 1 1.2 is - source current (a) vsd - source - to - drain voltage (v) tj = 25 c 0 500 1000 1500 2000 2500 3000 3500 4000 4500 0 5 10 15 20 capacitance (pf) vds - drain - to - source voltage (v) ciss coss crss f = 1mhz id = 2a ? preliminary 3 publication order number: ds_AM12N65P_1a
analog power AM12N65P 7. gate charge 9. safe operating area 10. single pulse maximum power dissipation 8. normalized on-resistance vs junction temperature 11. normalized thermal transient junction to ambient typical electrical characteristics 0 2 4 6 8 10 0 10 20 30 40 vgs - gate - to - source voltage (v) qg - total gate charge (nc) 0.01 0.1 1 10 100 0.1 1 10 100 1000 10000 id current (a) vds drain to source voltage (v) 10 us 100 us 1 ms 10 ms 100 ms 1 sec 10 sec 100 sec dc idm limit limited by rds 1 0 100 200 300 400 500 600 700 0.001 0.01 0.1 1 10 100 1000 peak transient power (w) t1 time (sec) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 time (sec) d = 0.5 0.2 0.1 0.05 0.02 single pulse r ja (t) = r(t) + r ja t j - t a = p * r ja (t) duty cycle, d = t 1 / t 2 0.5 1 1.5 2 2.5 -50 -25 0 25 50 75 100 125 150 rds(on) - on - resistance( ) (normalized) tj - junctiontemperature( c) p(pk) t 1 t 2 r ja = 62.5 c /w vds = 100v id = 2a ? preliminary 4 publication order number: ds_AM12N65P_1a
analog power AM12N65P package information ? preliminary 5 publication order number: ds_AM12N65P_1a
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