DMN3404L n-channel enhancement mode mosfet product summary v (br)dss r ds(on) max i d max t a = +25c 30v 28m ? @ v gs = 10v 5.8a 42m ? @ v gs = 4.5v 4.8a 82m ? @ v gs = 3v 2.0a description this mosfet has been designed to minimize the on-state resistance (r ds(on) ) and yet maintain superior switching performance, making it ideal for high efficiency po wer management applications. applications ? battery charging ? power management functions ? dc-dc converters ? portable power adaptors features and benefits ? low on-resistance ? low input capacitance ? fast switching speed ? low input/output leakage ? totally lead-free & fully rohs compliant (notes 1 & 2) ? halogen and antimony free. ?green? device (note 3) ? ? qualified to aec-q101 standards for high reliability mechanical data ? case: sot23 ? case material: molded plastic, ?g reen? molding compound. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020 ? terminals: finish ? matte tin annealed over copper leadframe. solderable per mil-std-202, method 208 ? terminals connections: see diagram below ? weight: 0.008 grams (approximate) ordering information (note 4 & 5) part number compliance case packaging DMN3404L-7 standard sot23 3000/tape & reel DMN3404Lq-7 automotive sot23 3000/tape & reel notes: 1. no purposely added lead. fully eu directiv e 2002/95/ec (rohs) & 2011/6 5/eu (rohs 2) compliant. 2. halogen- and antimony-free "green? products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total br + cl) and <1000ppm antimony compounds. marking information date code key year 2009 2010 2011 2012 2013 2014 2015 code w x y z a b c month jan feb mar apr may jun jul aug sep oct nov dec code 1 2 3 4 5 6 7 8 9 o n d top view internal schematic top view d g s source gate drain 34n = product type marking code ym = date code marking y = year (ex: w = 2009) m = month (ex: 9 = september) 34n ym e3 product specification sales@twtysemi.com 1 of 3 http://www.twtysemi.com
maximum ratings (@t a = +25c, unless otherwise specified.) characteristic symbol value units drain-source voltage (note 6 & 7) vdss 30 v gate-source voltage vgss 20 v continuous drain current (note 6) v gs = 10v steady state t a = -40c t a = +25c t a = +85c i d 4.6 4.2 3.0 a continuous drain current (note 7) v gs = 10v steady state t a = -40c t a = +25c t a = +85c i d 6.2 5.8 4.0 a continuous drain current (note 7) v gs = 4.5v steady state t a = -40c t a = +25c t a = +85c i d 5.2 4.8 3.2 a continuous drain current (note 7) v gs = 3v steady state t a = -40c t a = +25c t a = +85c i d 2.2 2.0 1.0 a pulsed drain current i dm 30 a thermal characteristics characteristic symbol value unit power dissipation (note 6) p d 0.72 w thermal resistance, junction to ambient @t a = +25c r ja 173 c/w power dissipation (note 7) p d 1.4 w thermal resistance, junction to ambient @t a = +25c r ja 90 c/w operating and storage temperature range t j, t stg -55 to +150 c notes: 3. device mounted on fr-4 substrate pc board, 2oz copper, with minimum recommended pad layout. 4. device mounted on fr-4 substrate pc board, 2oz copper, wi th thermal bias to bottom layer 1inch square copper plate. DMN3404L product specification sales@twtysemi.com 2 of 3 http://www.twtysemi.com
electrical characteristics (@t a = +25c, unless otherwise specified.) characteristic symbol min typ max unit test condition off characteristics (note 8) drain-source breakdown voltage bv dss 30 ? ? v v gs = 0v, i d = 250 a zero gate voltage drain current t j = +25c i dss ? ? 1.0 a v ds = 30v, v gs = 0v gate-source leakage i gss ? ? 100 na v gs = 20v, v ds = 0v on characteristics (note 8 ) gate threshold voltage v gs ( th ) 1.0 1.5 2.0 v v ds = v gs , i d = 250 a static drain-source on-resistance t j = -40c (note 9) r ds(on) ? 23 27 ? v gs = 4.5v, i d = 4.8a ? 57 74 ? v gs =3v, i d =2a static drain-source on-resistance t j = +25c r ds(on) ? 24 28 m ? v gs = 10v, i d = 5.8a ? 33 42 v gs = 4.5v, i d = 4.8a ? 63 82 v gs =3v, i d =2a static drain-source on-resistance t j = +85c (note 9) r ds ( on ) ? 71 95 m ? v gs =3v, i d =2a forward transfer admittance |y fs | ? 10 ? s v ds = 5v, i d = 5.8a diode forward voltage v sd ? 0.75 1.0 v v gs = 0v, i s = 1a dynamic characteristics (note 10) input capacitance c iss ? 498 ? pf v ds = 15v, v gs = 0v, f = 1.0mhz output capacitance c oss ? 52 ? pf reverse transfer capacitance c rss ? 45 ? pf gate resistance r g ? 1.75 2.8 ? v ds = 0v, v gs = 0v, f = 1mhz total gate charge (v gs = 3v) q g ? 3.8 5.3 nc v gs = 3v, v ds = 15v, i d = 1a total gate charge (v gs = 4.5v) q g ? 5.3 7.5 nc v gs = 10v/4.5v, v ds = 15v, i d = 5.8a total gate charge (v gs = 10v) q g ? 11.3 16 nc gate-source charge q g s ? 1.4 ? nc gate-drain charge q g d ? 2.1 ? nc turn-on delay time t d ( on ) ? 3.41 10 ns v dd = 15v, v gs = 10v, r l = 2.6 ? , r g = 3 ? turn-on rise time t r ? 6.18 13 ns turn-off delay time t d ( off ) ? 13.92 28 ns turn-off fall time t f ? 2.84 10 ns notes: 5. short duration pulse test used to minimize self-heating effect. 6. guaranteed by design and 25c data. not subject to production testing 7. guaranteed by design. not subject to production testing. DMN3404L product specification sales@twtysemi.com 3 of 3 http://www.twtysemi.com
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