january 200 2 200 2 fairchild semiconductor corporation fds7764a rev d (w) fds7764a 30v n - channel powertrench mosfet general description this n - channel mosfet has been designed specifically to improve the overall efficiency of dc/dc converters using either synchronous or conventional switching pwm controllers. it has been op timized for ?low side? synchronous rectifier operation, providing an extremely low r ds(on) in a small package. applications synchronous rectifier dc/dc converter features 15 a, 30 v. r ds(on) = 7.5 m w @ v gs = 4.5 v high performance trench technology for extremely low r ds(on) high power and current handling capability s d s s so-8 d d d g 4 3 2 1 5 6 7 8 absolute maximum ratings t a =25 o c unless otherwise noted symbol parameter ratings units v dss drain - source voltage 30 v v gss gate - sour ce voltage 12 v i d drain current ? continuous (note 1a) 15 a ? pulsed 50 power dissipation for single operation (note 1a) 2.5 (note 1b) 1.2 p d (note 1c) 1.0 w t j , t stg operating and storage junction temperature range ? 55 to +1 75 c ther mal characteristics r q ja thermal resistance, junction - to - ambient (note 1a) 50 c/w r q jc thermal resistance, junction - to - case (note 1) 30 c/w package marking and ordering information device marking device reel size tape width quantity fds7764a fds776 4a 13?? 12mm 2500 units fds7764a
fds7764a rev d (w) electrical characteristics t a = 25c unless otherwise noted symbol parameter test conditions min typ max units off characteristics bv dss drain ? source breakdown voltage v gs = 0 v, i d = 250 m a 30 v d bv dss d t j breakdown voltage temperature coefficient i d = 250 m a, referenced to 25 c 2 3 mv/ c i dss zero gate voltage drain current v ds = 24 v, v gs = 0 v 1 m a i gssf gate ? body leakage, forward v gs = 12 v, v ds = 0 v 100 na i gssr gate ? body leakage, reverse v gs = ? 12 v , v ds = 0 v ? 100 na on characteristics (note 2) v gs(th) gate threshold voltage v ds = v gs , i d = 250 m a 0.8 1. 1 2.0 v d v gs(th) d t j gate threshold voltage temperature coefficient i d = 250 m a, referenced to 25 c ? 4 mv/ c r ds(on) static drain ? s ource on ? resistance v gs = 4.5 v, i d = 15 a v gs = 4.5 v, i d = 15 a, t j = 125 c v gs = 10 v, i d = 15.5 a 6. 5 9. 3 6.0 7.5 1 3 m w i d(on) on ? state drain current v gs = 4.5 v, v ds = 5 v 50 a g fs forward transconducta nce v ds = 10 v, i d = 15 a 97 s dynamic characteristics c iss input capacitance 3451 pf c oss output capacitance 5 20 pf c rss reverse transfer capacitance v ds = 15 v, v gs = 0 v, f = 1.0 mhz 2 02 pf switching characteristics (note 2 ) t d(on) turn ? on delay time 1 6 2 8 ns t r turn ? on rise time 1 3 2 3 ns t d(off) turn ? off delay time 52 82 ns t f turn ? off fall time v dd = 1 5 v, i d = 1 a, v gs = 4.5 v, r gen = 6 w 2 0 36 ns q g total gate charge 29 4 0 nc q gs gate ? source charge 6.7 nc q gd gate ? drain charge v ds = 15 v, i d = 15 a, v g s = 4.5 v 7 nc drain ? source diode characteristics and maximum ratings i s maximum continuous drain ? source diode forward current 2.1 a v sd drain ? source diode forward voltage v gs = 0 v, i s = 2.1 a (note 2) 0.7 1.2 v notes: 1. r q ja is the sum of the junction - to - case and case - to - ambient thermal resistance where the case thermal reference is defined as the solder mounting surface of the drain pins. r q jc is guaranteed by design while r q ca is determined by the user's board design. a) 50 c /w when mounted on a 1in 2 pad of 2 oz copper b) 105 c /w when mounted on a .04 in 2 pad of 2 oz copper c) 125 c /w when mounted on a minimum pad. scale 1 : 1 on letter size paper 2. pulse test: pulse width < 300 m s, duty cycle < 2.0% fds7764a
fds7764a rev d (w) typical characteri stics 0 10 20 30 40 50 0 0.5 1 1.5 v ds , drain to source voltage (v) i d , drain current (a) v gs = 4.5v 3.0v 2.0v 3.5v 2.5v 0.8 1 1.2 1.4 1.6 0 10 20 30 40 50 i d , drain current (a) r ds(on) , normalized drain-source on-resistance v gs = 2.5v 4.5v 3.0v 4.0v 3.5v figure 1. on - region characteristics. figure 2. on - resistance variation with drain current and gate voltage. 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 175 t j , junction temperature ( o c) r ds(on) , normalized drain-source on-resistance i d = 15.5a v gs = 10v 0.005 0.0075 0.01 0.0125 0.015 0.0175 0.02 0 2 4 6 8 10 v gs , gate to source voltage (v) r ds(on) , on-resistance (ohm) i d = 7.8a t a = 125 o c t a = 25 o c figure 3. on - resistance variation with temperature. figure 4. on - resistance variation with gate - to - source voltage. 0 15 30 45 60 75 90 1 1.5 2 2.5 3 v gs , gate to source voltage (v) i d , drain current (a) t a = -55 o c 25 o c 125 o c v ds = 5v 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd , body diode forward voltage (v) i s , reverse drain current (a) v gs = 0v t a = 125 o c 25 o c -55 o c figure 5. transfer characteristics. figure 6. body diode forward voltage variation with source current and temperature. fds7764a
fds7764a rev d (w) typical characteristics 0 1 2 3 4 5 0 5 10 15 20 25 30 35 q g , gate charge (nc) v gs , gate-source voltage (v) i d = 15 a v ds = 5v 10v 15v 0 1000 2000 3000 4000 5000 0 5 10 15 20 25 30 v ds , drain to source voltage (v) capacitance (pf) c iss c oss c rss f = 1 mhz v gs = 0 v figure 7. gate charge characteristics. figure 8. capacitance characteristics. 0.01 0.1 1 10 100 0.01 0.1 1 10 100 v ds , drain-source voltage (v) i d , drain current (a) dc 10s 1s 100ms 100 m s r ds(on) limit v gs = 10v single pulse r q ja = 125 o c/w t a = 25 o c 10ms 1ms 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) p(pk), peak transient power (w) single pulse r q ja = 125c/w t a = 25c figure 9. maximum safe op erating area. figure 10. single pulse maximum power dissipation. 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t 1 , time (sec) r(t), normalized effective transient thermal resistance r q ja (t) = r(t) + r q ja r q ja = 125 o c/w t j - t a = p * r q ja (t) duty cycle, d = t 1 / t 2 p(pk) t 1 t 2 single pulse 0.01 0.02 0.05 0.1 0.2 d = 0.5 figure 11. transient thermal response curve. thermal characterization performed using the conditions described in note 1c. transient the rmal response will change depending on the circuit board design. fds7764a
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