? 2004 ixys all rights reserved isolated tab e v ces = 1700 v i c25 = 16 a v ce(sat) = 5.0 v t fi(typ) = 40 ns ixgr 16n170ah1 g = gate, c = collector, e = emitter g c features z electrically isolated tab z international standard package outline z high current handling capability z mos gate turn-on - drive simplicity z rugged npt structure z ul recognized z molding epoxies meet ul 94 v-0 flammability classification z sonic-frd tm fast recovery copack diode applications z capacitor discharge & pulser circuits z ac motor speed control z dc servo and robot drives z dc choppers z uninterruptible power supplies (ups) z switched-mode and resonant-mode power supplies ds99232(11/04) symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. bv ces i c = 250 a, v ge = 0 v 1700 v v ge(th) i c = 250 a, v ce = v ge 3.0 5.0 v i ces v ce = 0.8 ? v ces t j = 25 c 100 a v ge = 0 v note 1 t j = 125 c 1.5 ma i ges v ce = 0 v, v ge = 20 v 100 na v ce(sat) i c = i c90 , v ge = 15 v t j = 25 c 4.2 5.0 v t j = 125 c 4.8 v symbol test conditions maximum ratings v ces t j = 25 c to 150 c 1700 v v cgr t j = 25 c to 150 c; r ge = 1 m ? 1700 v v ges continuous 20 v v gem transient 30 v i c25 t c = 25 c16a i c90 t c = 90 c8a i f90 15 a i cm t c = 25 c, 1 ms 40 a ssoa v ge = 15 v, t vj = 125 c, r g = 10 ? i cm = 40 a (rbsoa) clamped inductive load @ 0.8 v ces t sc t j = 125 c, v ce = 1200 v; v ge = 15 v, r g = 22 ? 10 s p c t c = 25 c 120 w v isol 50/60 hz, rms, 1 minute 2500 ~v t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c f c mounting force 22...130/5.30 n/lb maximum lead temperature for soldering 300 c 1.6 mm (0.062 in.) from case for 10 s weight 5g high voltage igbt with diode advance technical data electrically isolated tab isoplus247 (ixgr) e153432
ixys reserves the right to change limits, test conditions, and dimensions. symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs i c = i c25 ; v ce = 10 v 6 10 s note 2 c ies 1700 pf c oes v ce = 25 v, v ge = 0 v, f = 1 mhz 125 pf c res 30 pf q g 65 nc q ge i c = i c90 , v ge = 15 v, v ce = 0.5 v ces 13 nc q gc 24 nc t d(on) 36 ns t ri 57 ns t d(off) 200 350 ns t fi 40 150 ns e off 0.9 1.5 mj t d(on) 38 ns t ri 59 ns e on 1.5 mj t d(off) 200 ns t fi 55 ns e off 1.1 mj r thjc 1.04 k/w r thck 0.15 k/w inductive load, t j = 125 c i c = i c25 , v ge = 15 v r g = 10 ?, v ce = 0.5 v ces note 3 inductive load, t j = 25 c i c = i c25 , v ge = 15 v r g = 10 ?, v ce = 0.5 v ces note 3 ixgr 16n170ah1 ixys mosfets and igbts are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 b1 6,683,344 6,727,585 one or moreof the following u.s. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 b1 6,534,343 6,710,405b2 6,759,692 4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 b1 6,583,505 6,710,463 isoplus247 outline notes: 1. device must be heatsunk for high temperature leakage current measurements to avoid thermal runaway. 2. pulse test, t 300 s, duty cycle 2 % 3. switching times may increase for v ce (clamp) > 0.8 ? v ces , higher t j or increased r g . reverse diode (fred) characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. v f i f = 20a, v ge = 0 v, note 2 2.7 v i rm i f = 50a, v ge = 0 v, -di f /dt = 800 a/ s50a t rr v r = 600 v 150 n s r thjc 1.5 k/w
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