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  ? semiconductor components industries, llc, 2011 november, 2011 ? rev. 7 1 publication order number: mmbta55lt1/d mmbta55lseries, mmbta56lseries, smmbta56lseries driver transistors pnp silicon features ? aec ? q101 qualified and ppap capable ? s prefix for automotive and other applications requiring unique site and control change requirements ? these devices are pb ? free, halogen free/bfr free and are rohs compliant* maximum ratings rating symbol value unit collector ? emitter voltage mmbta55 mmbta56, smmbta56 v ceo ? 60 ? 80 vdc collector ? base voltage mmbta55 mmbta56, smmbta56 v cbo ? 60 ? 80 vdc emitter ? base voltage v ebo ? 4.0 vdc collector current ? continuous i c ? 500 madc thermal characteristics characteristic symbol max unit total device dissipation fr ? 5 board (note 1) t a = 25 ? c derate above 25 ? c p d 225 1.8 mw mw/ ? c thermal resistance, junction ? to ? ambient r  ja 556 ? c/w total device dissipation alumina substrate, (note 2) t a = 25 ? c derate above 25 ? c p d 300 2.4 mw mw/ ? c thermal resistance, junction ? to ? ambient r  ja 417 ? c/w junction and storage temperature t j , t stg ? 55 to +150 ? c stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. fr ? 5 = 1.0 0.75 0.062 in. 2. alumina = 0.4 0.3 0.024 in. 99.5% alumina. *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. sot ? 23 case 318 style 6 collector 3 1 base 2 emitter http://onsemi.com *date code orientation and/or overbar may vary depending upon manufacturing location. 1 2xx m   2xx = device code x = h for mmbta55lt1g xx = gm for mmbta56lt1g, SMMBTA56LT1G m = date code*  = pb ? free package (note: microdot may be in either location) marking diagram see detailed ordering and shipping information in the package dimensions section on page 4 of this data sheet. ordering information
mmbta55l series, mmbta56l series, smmbta56l series http://onsemi.com 2 electrical characteristics (t a = 25 ? c unless otherwise noted) characteristic symbol min max unit off characteristics collector ? emitter breakdown voltage (note 3) (i c = ? 1.0 madc, i b = 0) mmbta55 mmbta56, smmbta56 v (br)ceo ? 60 ? 80 ? ? vdc emitter ? base breakdown voltage (i e = ? 100  adc, i c = 0) v (br)ebo ? 4.0 ? vdc collector cutoff current (v ce = ? 60 vdc, i b = 0) i ces ? ? 0.1  adc collector cutoff current (v cb = ? 60 vdc, i e = 0) mmbta55 (v cb = ? 80 vdc, i e = 0) mmbta56, smmbta56 i cbo ? ? ? 0.1 ? 0.1  adc on characteristics dc current gain (i c = ? 10 madc, v ce = ? 1.0 vdc) (i c = ? 100 madc, v ce = ? 1.0 vdc) h fe 100 100 ? ? ? collector ? emitter saturation voltage (i c = ? 100 madc, i b = ? 10 madc) v ce(sat) ? ? 0.25 vdc base ? emitter on voltage (i c = ? 100 madc, v ce = ? 1.0 vdc) v be(on) ? ? 1.2 vdc small ? signal characteristics current ? gain ? bandwidth product (note 4) (i c = ? 100 madc, v ce = ? 1.0 vdc, f = 100 mhz) f t 50 ? mhz 3. pulse test: pulse width  300  s, duty cycle  2.0%. 4. f t is defined as the frequency at which |h fe | extrapolates to unity. figure 1. switching time test circuits output turn-on time -1.0 v v cc +40 v r l * c s  6.0 pf r b 100 100 v in 5.0  f t r = 3.0 ns 0 +10 v 5.0  s output turn-off time +v bb v cc +40 v r l * c s  6.0 pf r b 100 100 v in 5.0  f t r = 3.0 ns 5.0  s *total shunt capacitance of test jig and connectors for pnp test circuits, reverse all voltage polarities
mmbta55l series, mmbta56l series, smmbta56l series http://onsemi.com 3 figure 2. current ? gain ? bandwidth product figure 3. capacitance i c , collector current (ma) -100 -200 -10 200 100 70 50 20 v r , reverse voltage (volts) -1.0 -100 -0.1 100 70 50 30 20 10 -2.0 v ce = -2.0 v t j = 25 ? c f t , current-gain - bandwidth product (mhz ) c, capacitance (pf) -2.0 -3.0 -5.0 -7.0 -20 -30 -50 -70 30 7.0 5.0 -0.2 -0.5 -5.0 -10 -20 -50 t j = 25 ? c c ibo c obo figure 4. switching time i c , collector current (ma) -10 -5.0 500 200 100 50 20 10 -100 t, time (ns) -50 -200 -500 1.0 k 300 700 70 30 -7.0 -300 -70 -20 -30 v cc = -40 v i c /i b = 10 i b1 = i b2 t j = 25 ? c t s t f t r t d @ v be(off) = -0.5 v figure 5. dc current gain -2.0 -500 -0.5 i c , collector current (ma) 400 200 100 80 60 40 -10 , dc current gain t j = 125 ? c -1.0 -5.0 v ce = -1.0 v -20 -100 -50 -200 h fe 25 ? c -55 ? c figure 6. collector emitter saturation voltage vs. collector current figure 7. base emitter saturation voltage vs. collector current i c , collector current (a) i c , collector current (a) 1 0.1 0.01 0.001 0.01 0.1 1 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.4 0.6 0.7 0.8 1.0 1.1 v ce(sat) , collector ? emitter saturation voltage (v) v be(sat) , base ? emitter saturation voltage (v) i c /i b = 10 150 ? c 25 ? c ? 55 ? c 0.5 0.9 i c /i b = 10 150 ? c 25 ? c ? 55 ? c
mmbta55l series, mmbta56l series, smmbta56l series http://onsemi.com 4 figure 8. base emitter voltage vs. collector current i c , collector current (a) 1 0.1 0.01 0.001 0.0001 0.2 0.3 0.5 0.6 0.7 0.9 1.1 1.2 v be(on) , base ? emitter voltage (v) 0.4 0.8 1.0 v ce = 1 v 150 ? c 25 ? c ? 55 ? c figure 9. collector saturation region figure 10. base ? emitter temperature coefficient figure 11. safe operating area v ce , collector emitter voltage (v) 100 10 1 0.1 0.001 0.01 0.1 1 i c , collector current (a) thermal limit 100 ms 1 s 10 ms 1 ms i b , base current (ma) , collector-emitter voltage (volts) v ce -0.1 -10 -0.05 -1.0 -0.8 -0.6 -0.4 -0.2 0 -1.0 t j = 25 ? c -50 i c = -100 ma i c = -50 ma i c = -250 ma i c = -500 ma i c = -10 ma -20 -2.0 -5.0 -0.2 -0.5 i c , collector current (ma) r vb , temperature coefficient (mv/ c)  ? -100 -500 -0.5 -0.8 -1.2 -1.6 -2.0 -2.4 -2.8 -10 r  vb for v be -1.0 -2.0 -5.0 -20 -50 -200 ordering information device order number package type shipping ? mmbta55lt1g sot ? 23 (pb ? free) 3,000 / tape & reel mmbta55lt3g sot ? 23 (pb ? free) 10,000 / tape & reel mmbta56lt1g sot ? 23 (pb ? free) 3,000 / tape & reel SMMBTA56LT1G sot ? 23 (pb ? free) 3,000 / tape & reel mmbta56lt3g sot ? 23 (pb ? free) 10,000 / tape & reel smmbta56lt3g sot ? 23 (pb ? free) 10,000 / tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
mmbta55l series, mmbta56l series, smmbta56l series http://onsemi.com 5 package dimensions sot ? 23 (to ? 236) case 318 ? 08 issue ap d a1 3 12 notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. maximum lead thickness includes lead finish thickness. minimum lead thickness is the minimum thickness of base material. 4. dimensions d and e do not include mold flash, protrusions, or gate burrs.  mm inches  scale 10:1 0.8 0.031 0.9 0.035 0.95 0.037 0.95 0.037 2.0 0.079 soldering footprint view c l 0.25 l1  e e e b a see view c dim a min nom max min millimeters 0.89 1.00 1.11 0.035 inches a1 0.01 0.06 0.10 0.001 b 0.37 0.44 0.50 0.015 c 0.09 0.13 0.18 0.003 d 2.80 2.90 3.04 0.110 e 1.20 1.30 1.40 0.047 e 1.78 1.90 2.04 0.070 l 0.10 0.20 0.30 0.004 0.040 0.044 0.002 0.004 0.018 0.020 0.005 0.007 0.114 0.120 0.051 0.055 0.075 0.081 0.008 0.012 nom max l1 h 2.10 2.40 2.64 0.083 0.094 0.104 h e 0.35 0.54 0.69 0.014 0.021 0.029 c 0 ??? 10 0 ??? 10  ? ? ? ? style 6: pin 1. base 2. emitter 3. collector on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to mak e changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for an y particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?typicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license under its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a sit uation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its of ficers, employees, subsidiaries, af filiates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in any manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada europe, middle east and africa technical support: phone: 421 33 790 2910 japan customer focus center phone: 81 ? 3 ? 5817 ? 1050 mmbta55lt1/d literature fulfillment : literature distribution center for on semiconductor p.o. box 5163, denver, colorado 80217 usa phone : 303 ? 675 ? 2175 or 800 ? 344 ? 3860 toll free usa/canada fax : 303 ? 675 ? 2176 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : www.onsemi.com order literature : http://www.onsemi.com/orderlit for additional information, please contact your local sales representative


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Newark

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onsemi Trans, Aec-Q101, Pnp, -80V, Sot-23-3; Transistor Polarity:Pnp; Collector Emitter Voltage V(Br)Ceo:-80V; Transition Frequency Ft:50Mhz; Power Dissipation Pd:225Mw; Dc Collector Current:-500Ma; Dc Current Gain Hfe:100Hfe; Transistor Rohs Compliant: Yes |Onsemi SMMBTA56LT1G 1000: USD0.092
500: USD0.103
250: USD0.112
100: USD0.122
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