cjd47 CJD50 surface mount npn silicon power transistor description: the central semiconductor cjd47, CJD50 types are npn silicon power transistors manufactured in a surface mount package designed for high voltage applications such as power supplies and other switching applications. marking: full part number maximum ratings: (t c =25c unless otherwise noted) symbol cjd47 CJD50 units collector-base voltage v cbo 350 500 v collector-emitter voltage v ceo 250 400 v emitter-base voltage v ebo 5.0 v continuous collector current i c 1.0 a peak collector current i cm 2.0 a continuous base current i b 600 ma power dissipation p d 15 w power dissipation (t a =25c) p d 1.56 w operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance jc 8.33 c/w thermal resistance ja 80.1 c/w electrical characteristics: (t c =25c unless otherwise noted) symbol test conditions min max units i ceo v ce =150v (cjd47) 200 a i ceo v ce =300v (CJD50) 200 a i ces v ce =350v (cjd47) 100 a i ces v ce =500v (CJD50) 100 a i ebo v eb =5.0v 1.0 ma bv ceo i c =30ma (cjd47) 250 v bv ceo i c =30ma (CJD50) 400 v v ce(sat) i c =1.0a, i b =200ma 1.0 v v be(on) v ce =10v, i c =1.0a 1.5 v h fe v ce =10v, i c =300ma 30 150 h fe v ce =10v, i c =1.0a 10 f t v ce =10v, i c =200ma, f=2.0mhz 10 mhz h fe v ce =10v, i c =200ma, f=1.0khz 25 dpak transistor case r2 (4-january 2010) www.centralsemi.com
cjd47 CJD50 surface mount npn silicon power transistor dpak transistor case - mechanical outline lead code: b) base c) collector e) emitter c) collector marking: full part number www.centralsemi.com r2 (4-january 2010)
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