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september 2010 doc id 15685 rev 2 1/15 15 STF13N95K3 stp13n95k3, stw13n95k3 n-channel 950 v, 0.68 ? , 10 a to-220, to-220fp, to-247 zener-protected supermesh3? power mosfet features gate charge minimized extremely large avalanche performance 100% avalanche tested very low intrinsic capacitance zener-protected application switching applications description these devices are made using the supermesh3 ? power mosfet technology that is obtained via improvements applied to stmicroelectronics? supermesh ? technology combined with a new optimized vertical structure. the resulting product has an extremely low on resistance, superior dynamic performance and high avalanche capability, making it especially suitable for the most demanding applications. figure 1. internal schematic diagram order codes v dss r ds(on) max i d p w STF13N95K3 950 v < 0.85 ? 10 a 40 w stp13n95k3 190 w stw13n95k3 to-220 1 2 3 1 2 3 1 2 3 to-220fp to-247 d(2) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging STF13N95K3 13n95k3 to-220fp tu b e stp13n95k3 to-220 stw13n95k3 to-247 www.st.com
contents STF13N95K3, stp13n95k3, stw13n95k3 2/15 doc id 15685 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14
STF13N95K3, stp13n95k3, stw13n95k3 electrical ratings doc id 15685 rev 2 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220, to-247 to-220fp v ds drain source voltage 950 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 10 10 (1) 1. limited only by maximu m temperature allowed a i d drain current (continuous) at t c = 100 c 6 6 (1) a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 40 40 (1) a p tot total dissipation at t c = 25 c 190 40 w i ar max current during repetitive or single pulse avalanche (pulse width limited by t jmax ) 13 a e as single pulse avalanche energy (starting t j = 25 c, i d =i as , v dd = 50 v) 400 mj dv/dt (3) 3. i sd 10 a, di/dt 400 a/s, v peak v (br)dss peak diode recovery voltage slope 9 v/ns t j t stg operating junction temperature storage temperature - 55 to 150 c table 3. thermal data symbol parameter value unit to-220 to-247 to-220fp rthj-case thermal resistance junction-case max 0.66 3.13 c/w rthj-amb thermal resistance junction-amb max 62.5 50 62.5 c/w t l maximum lead temperature for soldering purpose 300 c
electrical characteristics STF13N95K3, stp13n95k3, stw13n95k3 4/15 doc id 15685 rev 2 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 950 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating, v ds = max rating,tc=125 c 1 50 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 100 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 5 a 0.68 0.85 ? table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss input capacitance v ds =100 v, f=1 mhz, v gs =0 - 1620 - pf c oss output capacitance 117 pf c rss reverse transfer capacitance 1.2 pf c o(tr) (1) 1. time related is defined as a c onstant equivalent capacitance givi ng the same charging time as c oss when v ds increases from 0 to 80% v dss equivalent capacitance time related v gs = 0, v ds = 0 to 760 v - 115 - pf c o(er) (2) 2. energy related is defined as a c onstant equivalent capacitance givi ng the same stored energy as c oss when v ds increases from 0 to 80% v dss equivalent capacitance energy related - 131 - pf r g intrinsic gate resistance f = 1mhz open drain - 2.3 - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 760 v, i d = 10 a v gs =10 v (see figure 20 ) - 51 10 30 - nc nc nc
STF13N95K3, stp13n95k3, stw13n95k3 electrical characteristics doc id 15685 rev 2 5/15 the built-in-back zener diodes have specific ally been designed to enhance not only the device?s esd capability, but also to make them safely absorb possible vo ltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 6. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 475 v, i d = 5 a, r g =4.7 ? , v gs =10 v (see figure 22 ) - 18 16 50 21 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm source-drain current source-drain current (pulsed) - 10 40 ma a v sd (1) 1. pulsed: pulse duration = 300s, duty cycle 1.5% forward on voltage i sd = 10 a, v gs =0 - 1.6 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a, v dd = 60 v di/dt = 100 a/s, (see figure 21 ) - 500 9 36 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 10 a,v dd = 60 v di/dt=100 a/s, tj=150 c (see figure 21 ) - 624 11 37 ns c a table 8. gate-source zener diode symbol parameter test cond itions min typ. max. unit bv gso gate-source breakdown voltage igs 1ma, (open drain) 30 - v
electrical characteristics STF13N95K3, stp13n95k3, stw13n95k3 6/15 doc id 15685 rev 2 2.1 electrical characteristi cs (curves) figure 2. safe operating area for to-220fp figure 3. thermal impedance for to-220fp figure 4. safe operating area for to-220 figure 5. thermal impedance for to-220 figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2$3on ?s ?s ms ms 4j?# 4c?# 3ingle pulse !-v ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3ingle pulse !-v ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3ingle pulse !-v
STF13N95K3, stp13n95k3, stw13n95k3 electrical characteristics doc id 15685 rev 2 7/15 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy ) $ 6 $3 6 ! 6 6 6 6 '3 6 !-v ) $ 6 '3 6 ! 6 $3 6 !-v 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 6 '3 !-v 2 $3on ) $ ! /hm 6 '3 6 !-v # 6 $3 6 p& #iss #oss #rss !-v % oss 6 $3 6 ?* !-v
electrical characteristics STF13N95K3, stp13n95k3, stw13n95k3 8/15 doc id 15685 rev 2 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. source-drain diode forward characteristics figure 17. normalized b vdss vs temperature figure 18. maximum avalanche energy vs starting tj 6 '3th 4 * ?# norm !-v 2 $3on 4 * ?# norm !-v 6 3$ ) 3$ ! 6 4 * ?# 4 * ?# 4 * ?# !-v "6 $33 4 * ?# norm !-v % !3 4 * ?# m* ) $ ! 6 $$ 6 !-v
STF13N95K3, stp13n95k3, stw13n95k3 test circuits doc id 15685 rev 2 9/15 3 test circuits figure 19. switching times test circuit for resistive load figure 20. gate charge test circuit figure 21. test circuit for inductive load switching and diode recovery times figure 22. unclamped inductive load test circuit figure 23. unclamped inductive waveform figure 24. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
package mechanical data STF13N95K3, stp13n95k3, stw13n95k3 10/15 doc id 15685 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack ? is an st trademark.
STF13N95K3, stp13n95k3, stw13n95k3 package mechanical data doc id 15685 rev 2 11/15 figure 25. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
package mechanical data STF13N95K3, stp13n95k3, stw13n95k3 12/15 doc id 15685 rev 2 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
STF13N95K3, stp13n95k3, stw13n95k3 package mechanical data doc id 15685 rev 2 13/15 dim. mm. min. typ. max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
revision history STF13N95K3, stp13n95k3, stw13n95k3 14/15 doc id 15685 rev 2 5 revision history table 10. document revision history date revision changes 15-may-2009 1 first release. 02-sep-2010 2 document status promoted from preliminary data to datasheet.
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