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| january 2011 doc id 18432 rev 1 1/15 15 STD96N3LLH6 n-channel 30 v, 0.0037 ? , 80 a, dpak stripfet? vi deepgate? power mosfet features r ds(on) * q g industry benchmark extremely low on-resistance r ds(on) high avalanche ruggedness low gate drive power losses application switching applications ? automotive description this product is an n-channel power mosfet that utilizes the 6 th generation of design rules of st?s proprietary stripfet? technology, with a new gate structure. the resulting power mosfet exhibits the lowest r ds(on) in all packages. figure 1. internal schematic diagram type v dss r ds(on) max i d STD96N3LLH6 30 v 0.0042 ? 80 a dpak 1 3 am01474v1 d (tab or 2) g(1) s ( 3 ) table 1. device summary order codes marking package packaging STD96N3LLH6 96n3llh6 dpak tape and reel www.st.com
contents STD96N3LLH6 2/15 doc id 18432 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 8 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 14 STD96N3LLH6 electrical ratings doc id 18432 rev 1 3/15 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit v ds drain-source voltage (v gs = 0) 30 v v gs gate-source voltage 20 v i d (1) 1. limited by wire bonding. drain current (continuous) at t c = 25 c 80 a i d drain current (continuous) at t c = 100 c 61 a i dm (2) 2. pulse width limited by safe operating area. drain current (pulsed) 320 a p tot total dissipation at t c = 25 c 70 w derating factor 0.47 w/c e as (3) 3. starting tj = 25c, i av = 55 a, l = 0.1 mh single pulse avalanche energy 150 mj t stg storage temperature -55 to 175 c t j max. operating junction temperature 175 c table 3. thermal data symbol parameter value unit r thj-case thermal resistance junction-case max 2.14 c/w r thj-amb thermal resistance junc tion-ambient max 100 c/w r thj-pcb (1) 1. when mounted on fr-4 board of 1 inch 2 , 2 oz cu. thermal resistance junction-pcb max 35 c/w t l maximum lead temperature for soldering purpose 275 c electrical characteristics STD96N3LLH6 4/15 doc id 18432 rev 1 2 electrical characteristics (t case = 25 c unless otherwise specified) table 4. static symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 250 a, v gs = 0 30 v i dss zero gate voltage drain current (v gs = 0) v ds = 30 v v ds = 30 v, tc = 125 c 1 10 a a i gss gate body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 1 2.5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 40 a 0.0037 0.0042 ? v gs = 5.5 v, i d = 40 a 0.0055 0.007 ? table 5. dynamic symbol parameter test conditions min typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f=1 mhz, v gs = 0 - 2200 400 280 - pf pf pf q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 15 v, i d = 80 a v gs = 4.5 v figure 13 - 20 8.2 7.5 - nc nc nc q gs1 q gs2 pre v th gate-to-source charge post v th gate-to-source charge v dd = 15 v, i d = 80 a figure 18 - 3.4 6.2 - nc nc r g gate input resistance f = 1 mhz gate bias bias = 0 test signal level = 20 mv open drain -1- ? STD96N3LLH6 electrical characteristics doc id 18432 rev 1 5/15 table 6. switching on/off (inductive load) symbol parameter test conditions min. typ. max. unit t d(on) t r turn-on delay time rise time v dd = 15 v, i d = 40 a, r g = 4.7 ?, v gs = 5 v figure 12 - 19 91 - ns ns t d(off) t f turn-off delay time fall time v dd = 15 v, i d = 40 a, r g = 4.7 ?, v gs = 5 v figure 12 - 24.5 23.4 - ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 80 320 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 40 a, v gs = 0 - 1.1 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 80 a, di/dt = 100 a/s, v dd = 24 v figure 14 - 28.6 22.8 1.6 ns nc a electrical characteristics STD96N3LLH6 6/15 doc id 18432 rev 1 2.1 electrical characteristics (curves) figure 2. safe operating area figure 3. thermal impedance figure 4. output characteristics figure 5. transfer characteristics figure 6. normalized bv dss vs temperature figure 7. static drain source on resistance i d 100 10 1 0.1 0.1 1 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 100 s 1m s 10m s tj=175c tc=25c s inlge p u l s e am0 33 76v1 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 zth=k rthj-c =tp/ tp s ingle p u l s e =0.5 2 8 0dpc i d 150 100 50 0 0 4 v d s (v) (a) 2 200 250 v g s =10v 3 v 4v 5v 6v 7v 3 00 am0 33 79v1 i d 150 100 50 0 0 4 v g s (v) (a) 2 200 250 v d s =2v 3 00 8 6 am0 338 0v1 bv d ss -55 -5 t j (c) (norm) - 3 0 70 20 45 95 0.90 0.95 1.00 1.05 120 145 @250 a am0 338 1v1 r d s (on) 3 2 1 0 0 20 i d (a) (m ? ) 10 3 0 4 5 6 7 v g s =10v 40 am0 338 2v1 STD96N3LLH6 electrical characteristics doc id 18432 rev 1 7/15 figure 8. gate charge vs gate-source voltage figure 9. capacitance variations figure 10. normalized gate threshold voltage vs temperature figure 11. normalized on resistance vs temperature v g s 6 4 2 0 0 10 q g (nc) (v) 40 8 20 3 0 10 v dd =15v i d = 8 0a 50 12 am0 33 7 8 v1 c 1000 100 5 15 v d s (v) (pf) 10 20 ci ss co ss cr ss 20 am0 33 77v1 v g s (th) 0. 8 0.6 0.2 0 -55 -5 t j (c) (norm) - 3 0 1.0 70 20 45 95 120 145 0.4 1.2 @250 a am0 3383 v1 r d s (on) 1.6 1.4 1.0 0.6 -55 20 t j (c) (norm) -5 95 45 70 145 120 - 3 0 0. 8 1.2 1. 8 v g s =10v i d =40a am0 338 4v1 test circuits STD96N3LLH6 8/15 doc id 18432 rev 1 3 test circuits figure 12. switching times test circuit for resistive load figure 13. gate charge test circuit figure 14. test circuit for inductive load switching and diode recovery times figure 15. unclamped inductive load test circuit figure 16. unclamped inductive wavefo rm figure 17. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s STD96N3LLH6 test circuits doc id 18432 rev 1 9/15 figure 18. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd package mechanical data STD96N3LLH6 10/15 doc id 18432 rev 1 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. table 8. dpak (to-252) mechanical data dim. mm min. typ. max. a 2.20 2.40 a1 0.90 1.10 a2 0.03 0.23 b 0.64 0.90 b4 5.20 5.40 c 0.45 0.60 c2 0.48 0.60 d 6.00 6.20 d1 5.10 e 6.40 6.60 e1 4.70 e2.28 e1 4.40 4.60 h9.35 10.10 l1 l1 2.80 l2 0.80 l4 0.60 1 r0.20 v2 0 8 STD96N3LLH6 package mechanical data doc id 18432 rev 1 11/15 figure 19. dpak (to-252) drawing 006 8 772_g packaging mechanical data STD96N3LLH6 12/15 doc id 18432 rev 1 5 packaging mechanical data figure 20. dpak footprint (a) table 9. dpak (to-252) tape and reel mechanical data tape reel dim. mm dim. mm min. max. min. max. a0 6.8 7 a 330 b0 10.4 10.6 b 1.5 b1 12.1 c 12.8 13.2 d1.5 1.6d20.2 d1 1.5 g 16.4 18.4 e 1.65 1.85 n 50 f 7.4 7.6 t 22.4 k0 2.55 2.75 p0 3.9 4.1 base qty. 2500 p1 7.9 8.1 bulk qty. 2500 p2 1.9 2.1 r40 t 0.25 0.35 w 15.7 16.3 a. all dimension ar e in millimeters 6.7 1.6 1.6 2. 3 2. 3 6.7 1. 8 3 am0 88 50v1 STD96N3LLH6 packaging mechanical data doc id 18432 rev 1 13/15 figure 21. tape for dpak (to-252) figure 22. reel for dpak (to-252) p1 a0 d1 p0 f w e d b0 k0 t u s er direction of feed p2 10 pitche s c u m u l a tive toler a nce on t a pe +/- 0.2 mm u s er direction of feed r bending r a di us b1 for m a chine ref. only incl u ding dr a ft a nd r a dii concentric a ro u nd b0 am0 88 52v1 top cover t a pe a d b f u ll r a di us g me asu red a t h ub c n reel dimen s ion s 40mm min. acce ss hole at s lot loc a tion t t a pe s lot in core for t a pe s t a rt 25 mm min. width am0 88 51v2 revision history STD96N3LLH6 14/15 doc id 18432 rev 1 6 revision history table 10. document revision history date revision changes 27-jan-2011 1 first release. STD96N3LLH6 doc id 18432 rev 1 15/15 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com |
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