mm bv3 401 features low capacitance ? 0.7 pf (typ) at v r = 20 v dc very low series resist ance at 100 m hz 0.34 (typ) @ i f = 10 m adc absolute m axim um ratings t a = 25 param eter sym bol rating unit continuo us reverse voltage v r 35 v continuo us f orw ard curre nt i f 200 m a pow er dissi pation @ t a = 25 p tot 200 m w junct ion tem pera ture t j 125 storage tem pera ture rang e t stg -55 to +150 ele ctr ical characteristics t a = 25 param eter sym bol test c onditons min typ ma x unit rev erse voltage v r i r = 10 a 35 v rev erse current i r v r = 25 v 100 na series resi st ance r s i f =10m a,f =100m hz 0.7 total capacitance c t v r =20v,f=1mhz 1.0 pf mark ing mar king 4d 0.4 +0.1 -0.1 2.9 +0.1 -0.1 0.95 +0.1 -0.1 1.9 +0.1 -0.1 2 . 4 + 0 . 1 - 0 . 1 1 . 3 + 0 . 1 - 0 . 1 0 - 0 . 1 0 . 3 8 + 0 . 1 - 0 . 1 0 . 9 7 + 0 . 1 - 0 . 1 0 . 5 5 0 . 4 1 2 3 unit: mm sot-23 0.1 +0.05 -0.01 3 cathode 1 anode product specification sales@twtysemi.com 1 of 2 http://www.twtysemi.com 4008-318-123
t y pical ch aracteristics figure 1. series resistance v f , forward voltage (volts) figure 3. diode capacitance t a , ambient temperature ( c) figure 4. leakage current 0.5 50 40 1.0 , reverse current ( a) 100 -60 0.01 0.001 0 +100 v r = 25 vdc +140 +60 +20 -20 i r 0.1 1.0 10 1.6 1.2 0.8 0.4 0 0 4.0 12 14 16 i f , forward current (ma) r s , series resistance (ohms) 1.4 1.0 0.6 0.2 t a = 25 c 2.0 6.0 8.0 10 30 20 10 0 0.8 0.6 0.9 0.7 i f , forward current (ma) t a = 25 c v r , reverse voltage (volts) 0 20 2.0 10 -15 +3.0 7.0 5.0 1.0 0.5 0.7 0.2 -3.0 -18 -6.0 -21 -9.0 -24 -12 -27 t a = 25 c c t , diode capacitance (pf) m 0.04 0.004 4.0 40 0.4 figure 2. forward voltage mm bv3 401 product specification sales@twtysemi.com 2 of 2 http://www.twtysemi.com 4008-318-123
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