us5u1 transistors rev.b 1/3 2.5v drive nch+sbd mosfet us5u1 z structure z dimensions (unit : mm) silicon n-channel mosfet / schottky barrier diode z features 1) nch mosfet and schottky barrier diode are put in tumt5 package. 2) high-speed switching, low on-resistance. 3) low voltage drive (2.5v drive). 4) built-in low v f schottky barrier diode. z applications switching z package specifications z inner circuit package code taping basic ordering unit (pieces) us5u1 tr 3000 type z absolute maximum ratings (ta=25 c) ? 1 ? 1 parameter v v dss symbol v v gss a i d a i dp a i s a i sp limits unit drain-source voltage gate-source voltage drain current continuous pulsed continuous pulsed ? 1 pw 10 s, duty cycle 1% ? 2 mounted on a ceramic board source current (body diode) 30 12 1.5 6.0 0.75 6.0 ? 2 p d c tch power dissipation channel temperature 150 w / element 0.7 ? 2 ? 1 parameter v v rm symbol v v r a i f a i fsm tj limits unit repetitive peak reverse voltage reverse voltage forward current ? 1 60hz 1cycle ? 2 mounted on ceramic board forward current surge peak power dissipation junction temperature 30 20 0.5 2.0 w / element p d 0.5 150 c (1)gate (2)source (3)anode (4)cathode (5)drain ? 1 esd protection diode ? 2 body diode ? 2 ? 1 (1) (2) (5) (3) (4) tumt5 abbreviated symbol : u01 2.0 1.3 0.2max.
us5u1 transistors rev.b 2/3 ? 1 parameter symbol w / total p d c tstg limits unit total power dissipation range of storage temperature ? 1 mounted on a ceramic board ? 55 to + 150 1.0 z electrical characteristics (ta=25 c) parameter symbol i gss y fs min. ? typ. max. unit conditions v (br) dss i dss v gs (th) r ds (on) c iss c oss c rss t d (on) t r t d (off) t f q g q gs q gd ? ? ? ? ? ? ? ? ? gate-source leakage drain-source breakdown voltage zero gate voltage drain current gate threshold voltage static drain-source on-state resistance forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time total gate charge gate-source charge gate-drain charge ? pulsed ? 10 av gs =12v, v ds =0v v dd 15v, v gs = 4.5v 30 ?? vi d = 1ma, v gs =0v ?? 1 av ds = 30v, v gs =0v 0.5 ? 1.5 v v ds = 10v, i d = 1ma ? 170 240 i d = 1.5a, v gs = 4.5v ? 180 250 m ? m ? m ? i d = 1.5a, v gs = 4v ? 240 340 i d = 1.5a, v gs = 2.5v 1.5 ?? sv ds = 10v, i d = 1.5a ? 80 ? pf v ds = 10v ? 14 12 ? pf v gs =0v ? 7 ? pf f=1mhz ? 9 ? ns ? 15 ? ns ? 6 ? ns ? 1.6 ? ns ? 0.5 2.2 nc ? 0.3 ? nc i d = 1.5a ?? nc r l = 10 ?, r g = 10 ? v dd 15 v i d = 0.75a v gs = 4.5v r l = 20 ? r g =10 ? v sd ?? 1.2 v i s = 0.75a, v gs =0v forward voltage parameter symbol min. typ. max. unit conditions v f ?? 0.36 v i s = 0.1a forward voltage ?? 0.47 v i s = 0.5a i r ?? 100 ai s = 20v reverse current parameter symbol min. typ. max. unit conditions
us5u1 transistors rev.b 3/3 source-drain voltage : v sd (v) 0.0 0.01 0.1 1 10 0.5 1.0 1.5 source current : i s (a) fig.5 source current vs. source-drain voltage v gs =0v pulsed ta=125 c 75 c 25 c ? 25 c z electrical characteristics curves drain current : i d (a) 0.01 1 10 100 1000 0.1 1 10 switching time : t (ns) fig.1 switching characteristics ta=25 c v dd =15v v gs =4.5v r g =10 ? pulsed tf td(off) td(on) tr total gate charge : qg (nc) 0 0.5 0 1 2 3 4 5 6 1 1.5 2 gate-source voltage : v gs (v) fig.2 dynamic input characteristics ta=25 c v dd =15v i d =1.5a r g =10 ? pulsed gate-source voltage : v gs (v) 0.0 0.001 0.01 0.1 1 10 0.5 1.0 2.0 1.5 2.5 drain current : i d (a) fig.3 typical transfer characteristics v ds =10v pulsed ta=125 c 75 c 25 c ? 25 c gate-source voltage : v gs (v) 0 0.0 0.1 0.2 0.3 0.4 0.5 0.7 0.8 0.9 0.6 1.0 12 10 3456789 static drain-source on-state resistance : r ds (m ? ) fig.4 static drain-source on-state resistance vs. gate source voltage ta=25 c pulsed drain current : i d (a) 0.01 0.1 1 10 0.1 1 10 static drain-source on-state resistance : r ds (on) ( ? ) fig.6 static drain-source on-state resistance vs. drain current ( ) v gs =4.5v pulsed ta=125 c 75 c 25 c ? 25 c drain current : i d (a) 0.01 0.1 1 10 0.1 1 10 static drain-source on-state resistance : r ds (on) ( ? ) fig.7 static drain-source on-state resistance vs. drain current ( ? ) v gs =4.0v pulsed ta=125 c 75 c 25 c ? 25 c drain current : i d (a) 0.01 0.1 1 10 0.1 1 10 static drain-source on-state resistance : r ds (on) ( ? ) fig.8 static drain-source on-state resistance vs. drain current ( ?? ) v gs =2.5v pulsed ta=125 c 75 c 25 c ? 25 c drain current : i d (a) 0.01 0.1 1 10 0.1 1 10 static drain-source on-state resistance : r ds (on) ( ? ) fig.9 static drain-source on-state resistance vs. drain current ( ) ta=25 c pulsed v gs =2.5v v gs =4v v gs =4.5v
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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