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| savantic semiconductor product specification silicon npn power transistors 2SD613 d escription with to-220c package complement to type 2sb633 high breakdown voltage :v c eo =85v high current 6a applications recommend for 25-35w high fidelity audio frequency amplifier output stage pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(tc=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 100 v v ceo collector-emitter voltage open base 85 v v ebo emitter-base voltage open collector 6 v i c collector current 6 a i cm collector current-peak 10 a p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SD613 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma; r be = : 85 v v (br)cbo collector-base breakdown voltage i c =5ma; i e =0 100 v v (br)ebo emitter-base breakdown votage i e =5ma; i c =0 6 v v cesat collector-emitter saturation voltage i c =4a;i b =0.4 a 2.0 v v be base-emitter voltage i c =1a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =40v; i e =0 0.1 ma i ebo emitter cut-off current v eb =4v; i c =0 0.1 ma h fe-1 dc current gain i c =1a ; v ce =5v 40 320 h fe-2 dc current gain i c =3a ; v ce =5v 20 f t transition frequency i c =1a ; v ce =5v 15 mhz c ob output capacitance i e =0; v cb =10v;f=1mhz 110 pf h fe-1 classifications c d e f 40-80 60-120 100-200 160-320 savantic semiconductor product specification 3 silicon npn power transistors 2SD613 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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