preliminary data sheet ICE10N73 ICE10N73 n - channel enhancement mode mosfet features ? low r ds(on) ? ultra low gate charge ? high d v /d t capability ? high unclamped inductive switching (uis) capability ? high peak current capability ? increased transconductance performance ? optimized design for high performance power systems product summary i d t a =25 o c 10a max v ( br)dss i d =250ua 730v min r ds(on) v gs =10v 0.25 typ q g v ds =480v 82nc typ icemos and its sister company 3 d semi own the fundamental patents for superjunction mosfets . the majority of these patents have 17 to 20 years of remaining life . this portfolio has granted patents issued in usa, china, korea, japan, taiwan & europe . maximum ratings b , at t j =25 o c , unless otherwise specified parameter symbol conditions value unit continuous drain current i d t c =25 o c 10 a pulsed drain current i d, pulse t c =25 o c 35 a avalanche energy, single pulse e as i d =7.5a 280 mj avalanche current, repetitive i ar limited by t j max 7.5 a mosfet d v /d t ruggedness d v /d t v ds =480v, i d =10a, t j =125 o c 50 v/ns gate source voltage v gs static 20 v ac ( f >1hz) 30 power dissipation p tot t c =25 o c 208 w operating and storage temperature t j , t stg - 55 to +150 o c mounting torque m 3 & 3.5 screws 60 ncm a when mounted on 1inch square 2oz copper clad fr - 4 b preliminary data sheet C specifications subject to change 1 sp - 10n73 - 000 - 1c 04/16/2013 d s g t0220 standard metal heatsink 1=gate, 2=drain, 3=source .
preliminary data sheet ICE10N73 parameter symbol conditions values unit min typ max thermal characteristics thermal resistance, junction - case a r thjc - - 0.6 o c/w thermal resistance, junction - ambient a r thja leaded - - 62 soldering temperature, wave soldering only allowed at leads t sold 1.6mm (0.063in.) from case for 10 s - - 260 o c electrical characteristics b , at t j =25 o c , unless otherwise specified static characteristics drain - source breakdown voltage v (br)dss v gs =0 v, i d =250a 730 760 - v gate threshold voltage v gs(th) v ds = v gs , i d =250a 2.5 3 3.5 zero gate voltage drain current i dss v ds =730v, v gs =0v, t j =25 o c - 0.5 5 a v ds =730v, v gs =0v, t j =150 o c - 20 - gate source leakage current i gss v gs = 20 v, v ds =0v - - 100 na drain - source on - state resistance r ds (on) v gs =10v, i d =5a, t j =25 o c - 0.25 0.35 ? v gs =10v, i d =5a, t j =150 o c - 0.7 - gate resistance r g f =1 mhz, open drain - 4 - ? dynamic characteristics input capacitance c iss v gs =0 v, v ds =25 v, f =1 mhz - 2650 - pf output capacitance c oss - 943 - reverse transfer capacitance c rss - 8 - transconductance g fs v ds > 2 *i d *r ds , i d =5 a - 20 - s turn - on delay time t d(on) v ds =380v, v gs =10v, i d =10a, r g =4 ? (external) - 10 - ns rise time t r - 5 - turn - off delay time t d(off) - 67 - fall time t f - 4.5 - 2 sp - 10n73 - 000 - 1c 04/16/2013
preliminary data sheet ICE10N73 3 parameter symbol conditions values unit min typ max gate charge characteristics gate to source charge q gs v ds =480 v, i d =10a, v gs =10 v - 16 - nc gate to drain charge q gd - 30 - gate charge total q g - 82 - gate plateau voltage v plateau - 5 - v reverse diode diode forward voltage v sd v gs =0v, i s= i f - 1.0 1.2 v reverse recovery time t rr v rr =480v, i s= i f , d if i d t =100 a/s - 423 - ns reverse recovery charge q rr - 8 - c peak reverse recovery current i rm - 34 - a sp - 10n73 - 000 - 1c 04/16/2013
preliminary data sheet ICE10N73 sp - 10n73 - 000 - 1c 04/16/2013 4 0 5 10 15 20 25 30 35 0 5 10 15 20 i d - drain current (a) v ds - drain - to - source voltage (v) output characteristics v gs =10 to 7v 5v 6v 0 5 10 15 20 25 30 35 0 2 4 6 8 10 i d - drain current (a) v gs - gate - to - source (v) transfer characteristics t j = 150?c 25?c 0 50 100 150 200 250 300 350 400 450 500 0 5 10 15 20 25 30 35 r ds(on) - on - state resistance (m) i d - drain current (a) on resistance vs drain current v gs = 10v 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 -50 -25 0 25 50 75 100 125 150 r ds(on) - on state resistance (normalized) t j - junction temperature (?c) on resistance vs junction temperature v gs = 10v i d = 5a 0 1 2 3 4 5 6 7 8 9 10 0 20 40 60 80 100 v gs - gate - to - source voltage (v) q g - total gate charge (nc) gate charge 480v v ds = 10a i d = 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 1.3 1.4 -50 -25 0 25 50 75 100 125 150 v gs(th) - gate threshold voltage (normalized) t j - junction temperature (?c) i d = 250 a gate threshold voltage vs junction temperature
preliminary data sheet ICE10N73 sp - 10n73 - 000 - 1c 04/16/2013 5 1 10 100 1000 10000 100000 0 100 200 300 400 500 600 c - capacitance (pf) v ds - drain - to - source votlage (v) capacitance crss coss ciss 0.8 0.9 1.0 1.1 1.2 -50 -25 0 25 50 75 100 125 150 v (br)dss - drain - to - source breakdown voltage (normalized) t j - junction temperature (?c) i d = 1ma drain - to - source breakdown voltage vs. junction temperature 0.01 0.1 1 10 100 1 10 100 1000 i d - drain current (a) v ds - drain - to - source voltage (v) r ds(on) limit package limit thermal limit dc single pulse, tc = 25 o c, t j =150 o c, v gs = 10v 1ms maximum rated forward biased safe operating area 100us r ds(on) limit package limit thermal limit single pulse, tc = 25 o c, t j =150 o c, v gs = 10v maximum rated forward biased safe operating area 10us 0.00 0.01 0.10 1.00 1.0e-06 1.0e-05 1.0e-04 1.0e-03 1.0e-02 1.0e-01 1.0e+00 r(t), transient thermal resistance (normalized) t - time (s) single pulse 0.02 0.05 0.1 0.2 0.5 transient thermal response, junction - to - case
preliminary data sheet ICE10N73 6 sp - 10n73 - 000 - 1c 04/16/2013
preliminary data sheet ICE10N73 7 sp - 10n73 - 000 - 1c 04/16/2013 common dimensions symbol mm inch min nom max min nom max a 4.35 4.525 4.70 0.171 0.178 0.185 a1 1.20 1.30 1.40 0.047 0.512 0.055 a2 2.35 2.57 2.79 0.093 0.101 0.110 b 0.65 0.775 0.90 0.260 0.031 0.035 b2 1.00 1.18 1.36 0.039 0.046 0.054 c 0.34 0.381 0.47 0.013 0.015 0.019 c1 0.33 0.465 0.60 0.013 0.018 0.024 d 14.70 15.325 15.95 0.579 0.603 0.628 d1 8.60 9.025 9.45 0.339 0.355 0.372 e 9.96 10.16 10.36 0.392 0.400 0.408 e1 10.10 10.25 10.35 0.398 0.404 0.407 e2 10.00 10.10 10.20 0.394 0.398 0.402 e 2.54 bsc 0.100 bsc e1 5.08 bsc 0.200 bsc h1 6.10 6.30 6.50 0.240 0.248 0.256 l 12.70 13.35 14.00 0.520 0.526 0.551 l1 3.75 4.75 0.148 0.187 l2 2.50 ref 0.098 ref p 3.55 3.715 3.88 0.140 0.146 0.153 q 2.60 2.743 2.90 0.102 0.108 0.114 1 5 7 9 5 7 9 2 1 3 5 1 3 5 p1 1.40 1.75 2.10 0.055 0.069 0.083 dep 0.05 0.10 0.20 0.002 0.004 0.008
preliminary data sheet ICE10N73 icemos superjunction patent portfolio icemos granted patents us7,429,772 us7,439,178 us7,446,018 us7,579,607 us7,723,172 us7,795,045 us7,846,821 us7,944,018 us8,012,806 us8,030,133 3d semi patents licensed to icemos us7,041,560b2 us7,023,069b2 us7,364,994 us7,227,197b2 us7,304,944b2 us7,052,982b2 us7,339,252 us7,410,891 us7,439,583 us7,227,197b2 us6,635,906 us6,936,867 us7,015,104 us9,109,110 us7,271,067 us7,354,818 us7,052,982, us7,199,006b2 note: additional patents in china, korea, japan, taiwan, europe have also been granted to icemos and 3d semi for superjunction mosfets with 70 additional patent applications in process in the usa and the above listed countries. 8 sp - 10n73 - 000 - 1c 04/16/2013
|
