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preliminary data this is preliminary information on a new product now in deve lopment or undergoing evaluation. details are subject to change without notice. april 2010 doc id 17206 rev 2 1/12 12 STN3N45K3 stq3n45k3-ap, stu3n45k3 n-channel 450 v, 3.2 ? , 1.8 a, to-92, sot-223, ipak supermesh3? power mosfet features 100% avalanche tested extremely high dv/dt capability gate charge minimized very low intrinsic capacitance improved diode reverse recovery characteristics zener-protected application switching applications description the new supermesh3? series is obtained through the combination of a further fine tuning of st's well established strip-based powermesh? layout with a new optimization of the vertical structure. in addition to reducing on-resistance significantly versus previous generation, special attention has been taken to ensure a very good dv/dt capability and higher margin in breakdown voltage for the most demanding application. figure 1. internal schematic diagram type v dss r ds(on) max i d pw STN3N45K3 450 v < 3.8 ? 0.6 a 2 w stq3n45k3-ap 450 v < 3.8 ? 0.6 a 2.5 w stu3n45k3 450 v < 3.8 ? 1.8 a 27 w 1 2 2 3 3 2 1 to-92 sot-223 ipak d(2) g(1) s(3) am01476v1 table 1. device summary order codes marking package packaging STN3N45K3 3n45k3 sot-223 tube stq3n45k3-ap 3n45k3 to-92 ammopak stu3n45k3 3n45k3 ipak tube www.st.com
contents STN3N45K3, stq3n45k3-ap, stu3n45k3 2/12 doc id 17206 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
STN3N45K3, stq3n45k3-ap, stu3n45k3 electrical ratings doc id 17206 rev 2 3/12 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit sot-223 to-92 ipak v ds drain-source voltage (v gs = 0) 450 v v gs gate- source voltage 30 v i d drain current (continuous) at t c = 25 c 0.6 1.8 a i d drain current (continuous) at t c = 100 c 0.38 1 a i dm (1) 1. pulse width limited by safe operating area. drain current (pulsed) 2.4 7.2 a p tot total dissipation at t c = 25 c 2 2.5 27 w t stg storage temperature -55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter sot-223 to-92 ipak unit r thj-case thermal resistance junction-case max 62.50 50 4.63 c/w r thj-amb thermal resistance junction-ambient max 100 c/w t l maximum lead temperature for soldering purpose 300 c table 4. avalanche characteristics symbol parameter max value unit i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 0.5 a e as single pulse avalanche energy (starting t j = 25c, i d = i ar , v dd = 50v) tbd mj
electrical characteristics stn3n 45k3, stq3n45k3-ap, stu3n45k3 4/12 doc id 17206 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 5. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 450 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 50 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 10 a v gs(th) gate threshold voltage v ds = v gs , i d = 50 a 3 3.75 4.5 v r ds(on static drain-source on resistance v gs = 10 v, i d = 0.5 a 3.2 3.8 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 150 30 6 - pf pf pf r g intrinsic gate resistance f = 1 mhz open drain - tbd - ? q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 360 v, i d = 1.8 a, v gs = 10 v (see figure 3 ) - 6 tbd tbd - nc nc nc table 7. switching times symbol parameter test conditions min. typ. max unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off-delay time fall time v dd = 225 v, i d = 0.5 a, r g = 4.7 ?, v gs = 10 v (see figure 2 ) - tbd tbd tbd tbd - ns ns ns ns
STN3N45K3, stq3n45k3-ap, stu3n45k3 electrical characteristics doc id 17206 rev 2 5/12 the built-in back-to-back zener diodes have specifically been designed to enhance not only the device?s esd capability, but also to make th em safely absorb possible voltage transients that may occasionally be applied from gate to source. in this respect the zener voltage is appropriate to achieve an efficient and cost-effective intervention to protect the device?s integrity. these integrated zener diodes thus avoid the usage of external components. table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area. source-drain current source-drain current (pulsed) - 1.8 7.2 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5%. forward on voltage i sd = 1.8 a, v gs = 0 - tbd v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.8 a, di/dt = 100 a/s v dd = 100 v (see figure 7 ) - tbd tbd tbd ns nc a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 1.8 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 7 ) - tbd tbd tbd ns nc a table 9. gate-source zener diode symbol parameter test conditions min typ max unit bv gso gate-source breakdown voltage igs= 1 ma (open drain) 30 - v
test circuits STN3N45K3, stq3n45k3-ap, stu3n45k3 6/12 doc id 17206 rev 2 3 test circuits figure 2. switching times test circuit for resistive load figure 3. gate charge test circuit figure 4. test circuit for inductive load switching and diode recovery times figure 5. unclamped inductive load test circuit figure 6. unclamped inductive wavefo rm figure 7. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
STN3N45K3, stq3n45k3-ap, stu3 n45k3 package mechanical data doc id 17206 rev 2 7/12 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data STN3N45K3, stq3n45k3-ap, stu3n45k3 8/12 doc id 17206 rev 2 dim. mm. min. typ max. a 1. 8 0 a1 0.02 0.1 b 0.60 0.70 0. 8 5 b1 2. 9 0 3 .00 3 .15 c 0.24 0.26 0. 3 5 d6. 3 0 6.50 6.70 e2. 3 0 e1 4.60 e 3 . 3 0 3 .50 3 .70 h 6.70 7.00 7. 3 0 v 10 o sot-223 mechanical data 0046067_l
STN3N45K3, stq3n45k3-ap, stu3 n45k3 package mechanical data doc id 17206 rev 2 9/12 figure 8. to-92 drawing table 10. to-92 mechanical data dim. mm min. typ. max. a 4.32 4.95 b 0.36 0.51 d 4.45 4.95 e 3.30 3.94 e 2.41 2.67 e1 1.14 1.40 l 12.70 15.49 r 2.16 2.41 s1 0.92 1.52 w 0.41 0.56 v5 01027 8 2 d
package mechanical data STN3N45K3, stq3n45k3-ap, stu3n45k3 10/12 doc id 17206 rev 2 dim. mm. min. typ max. a 2.20 2.40 a1 0. 9 01.10 b 0.64 0. 9 0 b 2 0. 9 5 b 4 5.20 5.40 c 0.45 0.60 c2 0.4 8 0.60 d 6.00 6.20 e 6.40 6.60 e2.2 8 e1 4.40 4.60 h 16.10 l 9 .00 9 .40 (l1) 0. 8 01.20 l2 0. 8 0 v1 10 o to-251 (ipak) mechanical data 006 8 771_h
STN3N45K3, stq3n45k3-ap, stu3n45k3 revision history doc id 17206 rev 2 11/12 5 revision history table 11. document revision history date revision changes 02-mar-2010 1 first release 23-apr-2010 2 changed root part number
STN3N45K3, stq3n45k3-ap, stu3n45k3 12/12 doc id 17206 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in military , air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2010 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com

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