7-171 VN0635 vn0640 bv dss /r ds(on) i d(on) bv dgs (max) (min) to-92 die ? 350v 10 w 0.75a VN0635n3 VN0635nd 400v 10 w 0.75a vn0640n3 vn0640nd ? mil visual screening available advanced dmos technology these enhancement-mode (normally-off) transistors utilize a vertical dmos structure and supertexs well-proven silicon-gate manufacturing process. this combination produces devices with the power handling capabilities of bipolar transistors and with the high input impedance and positive temperature coefficient inher- ent in mos devices. characteristic of all mos structures, these devices are free from thermal runaway and thermally-induced secondary breakdown. supertexs vertical dmos fets are ideally suited to a wide range of switching and amplifying applications where high breakdown voltage, high input impedance, low input capacitance, and fast switching speeds are desired. order number / package package options note: see package outline section for dimensions. n-channel enhancement-mode vertical dmos fets absolute maximum ratings drain-to-source voltage bv dss drain-to-gate voltage bv dgs gate-to-source voltage 20v operating and storage temperature -55 c to +150 c soldering temperature* 300 c * distance of 1.6 mm from case for 10 seconds. features n n free from secondary breakdown n n low power drive requirement n n ease of paralleling n n low c iss and fast switching speeds n n excellent thermal stability n n integral source-drain diode n n high input impedance and high gain n n complementary n- and p-channel devices applications n n motor controls n n converters n n amplifiers n n switches n n power supply circuits n n drivers (relays, hammers, solenoids, lamps, memories, displays, bipolar transistors, etc.) to-92 ordering information s g d
7-172 VN0635/vn0640 thermal characteristics package i d (continuous)* i d (pulsed) power dissipation q jc q ja i dr *i drm @ t c = 25 c c/w c/w to-92 0.25a 1.5a 1w 125 170 0.25a 1.5a * i d (continuous) is limited by max rated t j . electrical characteristics (@ 25 c unless otherwise specified) symbol parameter min typ max unit conditions bv dss vn0640 400 VN0635 350 v gs(th) gate threshold voltage 1.0 4.0 v v gs = v ds , i d = 2ma d v gs(th) change in v gs(th) with temperature -4.0 mv/ cv gs = v ds , i d = 2ma i gss gate body leakage 100 na v gs = 20v, v ds = 0v i dss zero gate voltage drain current 10 m av gs = 0v, v ds = max rating 1mav gs = 0v, v ds = 0.8 max rating t a = 125 c i d(on) on-state drain current 0.6 v gs = 5v, v ds = 25v 0.75 v gs = 10v, v ds = 25v r ds(on) 8.0 v gs = 5v, i d = 100ma 8.0 10 v gs = 10v, i d = 500ma d r ds(on) change in r ds(on) with temperature 0.75 %/ cv gs = 10v, i d = 500ma g fs forward transconductance 100 160 m v ds = 25v, i d = 500ma c iss input capacitance 105 130 c oss common source output capacitance 25 75 pf c rss reverse transfer capacitance 10 20 t d(on) turn-on delay time 10 t r rise time 10 t d(off) turn-off delay time 20 t f fall time 10 v sd diode forward voltage drop 1.8 v v gs = 0v, i sd = 0.5a t rr reverse recovery time 300 ns v gs = 0v, i sd = 0.5a notes: 1. all d.c. parameters 100% tested at 25 c unless otherwise stated. (pulse test: 300 m s pulse, 2% duty cycle.) 2. all a.c. parameters sample tested. a vv gs = 0v, i d = 2ma v gs = 0v, v ds = 25v f = 1 mhz drain-to-source breakdown voltage static drain-to-source on-state resistance v dd = 25v, i d = 0.5a, r gen = 25 w ns switching waveforms and test circuit 90% 10% 90% 90% 10% 10% pulse generator v dd r l output d.u.t. t (on) t d(on) t (off) t d(off) t f t r input input output 10v v dd r gen 0v 0v w w
7-173 VN0635/vn0640 typical performance curves output characteristics 1.25 1.0 0.75 0.5 0.25 0102030 50 40 v ds (volts) i d (amperes) saturation characteristics 0.75 0.6 0.45 0.3 0.15 v ds (volts) i d (amperes) maximum rated safe operating area 0.1 1.0 10 0.01 v ds (volts) i d (amperes) thermal response characteristics thermal resistance (normalized) 1.0 0.8 0.6 0.4 0.2 0.001 10 0.01 0.1 1 t p (seconds) transconductance vs. drain current 0.40 0.32 0.24 0.16 0.08 g fs (siemens) i d (amperes) power dissipation vs. case temperature 0 150 100 50 125 75 25 t c ( c) p d (watts) t c = 25 c 100 10 1 1000 0.8 0.6 0.4 0.2 0 v ds = 25v t a = -55 c t a = 25 c t a = 150 c to-92 50 40 30 20 10 0246 10 8 v gs = 10v 8v 6v 4v 3v 8v 4v 3v 0 0 0 0 0 1.0 6v 5v to-92 (dc) v gs = 10v to-92 p d = 1w t c = 25 c
7-174 VN0635/vn0640 typical performance curves gate drive dynamic characteristics q g (nanocoulombs) v gs (volts) t j ( c) v gs(th) (normalized) ds(on) r (normalized) v ds (th) and r variation with temperature on-resistance vs. drain current r ds(on) (ohms) bv dss (normalized) t j ( c) transfer characteristics v gs (volts) i d (amperes) capacitance vs. drain-to-source voltage c (picofarads) v ds (volts) i d (amperes) bv dss variation with temperature 0 10203040 150 100 50 0246810 2.5 2.0 1.5 1.0 0.5 -50 0 50 100 150 1.1 1.0 0.9 20 8 1.4 1.2 1.0 0.8 0.6 0.4 10 8 6 4 2 0 0.5 1.0 1.5 2.0 2.5 -50 0 50 100 150 100 pf v ds = 40v v ds = 10v 180 pf r ds @ 10v, 0.5a v gs = 5v t a = -55 c v ds = 25v f = 1mhz c iss c oss c rss 25 c 150 c 0 0.4 0.8 1.2 2.0 1.6 4 12 16 v (th) @ 2ma 0 0 200 0 0 v gs = 10v 2.5 2.0 1.5 1.0 0.5 0
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