red led chip gap/gap 1. material substrate gap (n type) epitaxial layer gap (p/n type) 2. electrode n(cathode) side gold alloy p(anode) side gold alloy 3. electro-optical parameter s ymbo l min typ max unit condition characteristics v f(1) 1.8 v if=1ma v f(2) 2.25 2.4 v if=20ma reverse voltag e v r 8 v ir=10ua brightness iv 30 35 mcd if=20ma d 635 nm if=20ma ? 100 nm if=20ma note : brightness is measured by sorter e/t system with bare chip. 4. mechanical data (a) emission area -------------------- - 10mil x 10mil (b) bottom area -------------------- - 11mil x 11mil (c) bonding pad -------------------- - 115um (d) chip thickness -------------------- - 11mil (e) junction height -------------------- - 6.8mil epi epi p n p side electrode n side electrode eoyang factory,513-5 eoyang-dong, iksan, 570-210, korea tel. +82 63 839 1111 fax. +82 63 835 8259 www.auk.co.kr OPA6917 forward voltag e wavelength auk corp. (c) (a) (b) (e) (d) substrate
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