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| 2010. 10. 8 1/2 semiconductor technical data MBRD6U60CT schottky barrier type diode revision no : 0 switching type power supply application. converter & chopper application. features h average output rectified current : i o =6a. h repetitive peak reverse voltage : v rrm =60v. maximum rating (ta=25 ? ) dpak (1) dim millimeters a a b b c c d d f ff h g k g j l k l m 0.96 max 0.90 max e e m n h 0.70 min n 123 6.60 0.20 + _ 6.10 0.20 + _ 5.34 0.30 + _ 0.70 0.20 + _ 2.70 0.15 + _ 2.30 0.10 + _ 1.80 0.20 + _ 0.50 0.10 + _ 2.30 0.10 + _ 0.50 0.10 + _ j 1. anode 2. cathode 3. anode electrical characteristics (ta=25 ? ) characteristic symbol test condition min. typ. max. unit peak forward voltage (note) v fm i fm =3a - - 0.65 v repetitive peak reverse current (note) i rrm v rrm =60v - - 50 a thermal resistance (note) r th(j-c) juction to case - - 6.0 ? /w characteristic symbol rating unit repetitive peak reverse voltage v rrm 60 v average output rectified current (tc=114 ? ) (note) i o 6 a peak one cycle surge forward current (non-repetitive 60hz) i fsm 45 a junction temperature t j -40 q 150 ? storage temperature range t stg -55 q 150 ? note : average forward current of centertap full wave connection. note : a value of one cell ) ( 5
2010. 10. 8 2/2 MBRD6U60CT revision no : 0 reverse current i r (ma) reverse voltage v r (v) i r - v r 0.001 0 1020304050 70 60 0.01 0.1 1 10 100 forward current i f (a) forward voltage v f (v) i f - v f 0.1 0.0 0.4 0.2 0.6 0.8 1.0 1 10 100 j t =25 c j t =75 c j t =150 c j t =25 c j t =75 c j t =125 c |
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