 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| geometry process details principal device types cmldm8002a cmpdm8002a ctldm8002a-m621 gross die per 6 inch wafer 62,600 process CP764X small signal mosfet transistor p-channel enhancement-mode transistor chip process epitaxial planar die size 21.7 x 17.7 mils die thickness 5.5 mils gate bonding pad area 4.7 x 4.7 mils source bonding pad area 6.1 x 7.9 mils top side metalization al-si - 35,000? back side metalization au - 12,000? www.centralsemi.com r1 (22-march 2010)
process CP764X typical electrical characteristics www.centralsemi.com r1 (22-march 2010) |
Price & Availability of CP764X
 |
|
|
|
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |