TEFT4300 vishay telefunken 1 (5) rev. 2, 20-may-99 www.vishay.com document number 81549 silicon npn phototransistor description TEFT4300 is a high speed and high sensitive silicon npn epitaxial planar phototransistor in a standard t1 ( 3 mm) plastic package. the epoxy package itself is an ir filter, spectrally matched to gaas ir emitters with p 900nm). the plastic lens provides a wide viewing angle of 30 . features high radiant sensitivity fast response times t1 ( 3 mm) plastic package with ir filter additional polarity sign wide viewing angle j = 30 suitable for near infrared radiation matches with tsus4300 gaas infrared emitter 94 8637 applications optical switches counters and sorters interrupters tape and card readers encoders position sensors absolute maximum ratings t amb = 25 c parameter test conditions symbol value unit collector emitter voltage v ceo 70 v emitter collector voltage v eco 5 v collector current i c 50 ma peak collector current t p /t = 0.5, t p 10 ms i cm 100 ma total power dissipation t amb 55 c p tot 100 mw junction temperature t j 100 c storage temperature range t stg 55...+100 c soldering temperature t 3 s, 2 mm from case t sd 260 c thermal resistance junction/ambient r thja 450 k/w
TEFT4300 vishay telefunken 2 (5) rev. 2, 20-may-99 www.vishay.com document number 81549 basic characteristics t amb = 25 c parameter test conditions symbol min typ max unit collector emitter breakdown voltage i c = 1 ma v (br)ce o 70 v collector dark current v ce = 20 v, e = 0 i ceo 1 200 na collector emitter capacitance v ce = 5 v, f = 1 mhz, e=0 c ceo 3 pf collector light current e e = 1 mw/cm 2 , = 950 nm, v ce = 5 v i ca 0.8 3.2 ma angle of half sensitivity j 30 deg wavelength of peak sensitivity p 925 nm range of spectral bandwidth 0.5 875...1000 nm collector emitter saturation voltage e e = 1 mw/cm 2 , = 950 nm, i c = 0.1 ma v cesat 0.3 v turnon time v s = 5 v, i c = 5 ma, r l = 100 t on 2.0 s turnoff time v s = 5 v, i c = 5 ma, r l = 100 t off 2.3 s cutoff frequency v s = 5 v, i c = 5 ma, r l = 100 f c 180 khz typical characteristics (t amb = 25 c unless otherwise specified) 020 406080 0 25 50 75 100 125 p total power dissipation ( mw ) tot t amb ambient temperature ( c ) 100 94 8308 r thja figure 1. total power dissipation vs. ambient temperature 94 8304 20 i collector dark current ( na ) ceo 100 40 60 80 t amb ambient temperature ( c ) 10 0 10 1 10 2 10 3 10 4 v ce =20v figure 2. collector dark current vs. ambient temperature
TEFT4300 vishay telefunken 3 (5) rev. 2, 20-may-99 www.vishay.com document number 81549 94 8239 0 0.6 0.8 1.0 1.2 1.4 2.0 i relative collector current ca rel 20 40 60 80 t amb ambient temperature ( c ) 100 1.6 1.8 v ce =5v e e =1mw/cm 2 =950nm figure 3. relative collector current vs. ambient temperature 0.01 0.1 1 0.01 0.1 1 10 i collector light current ( ma ) ca e e irradiance ( mw / cm 2 ) 10 94 8302 v ce =5v =950nm figure 4. collector light current vs. irradiance 0.1 1 10 0.1 1 10 i collector light current ( ma ) ca v ce collector emitter voltage ( v ) 100 94 8305 e e =1 mw/cm 2 0.5 mw/cm 2 0.2 mw/cm 2 0.1 mw/cm 2 0.05 mw/cm 2 =950nm figure 5. collector light current vs. collector emitter voltage 0.1 1 10 0 2 4 6 8 10 v ce collector emitter voltage ( v ) 100 94 8294 c collector emitter capacitance ( pf ) ceo f=1mhz figure 6. collector emitter capacitance vs. collector emitter voltage 02 4 6 12 0 2 8 14 94 8293 t / t turn on / turn off time ( s ) off i c collector current ( ma ) on 6 4 10 8 v ce =5v r l =100 =950nm t off t on figure 7. turn on/turn off time vs. collector current 800 900 1000 1100 94 8306 0 0.2 0.4 0.6 0.8 1.0 s ( ) relative spectral sensitivity rel wavelength ( nm ) figure 8. relative spectral sensitivity vs. wavelength
TEFT4300 vishay telefunken 4 (5) rev. 2, 20-may-99 www.vishay.com document number 81549 0.4 0.2 0 0.2 0.4 s relative sensitivity rel 0.6 94 8303 0.6 0.9 0.8 0 30 10 20 40 50 60 70 80 0.7 1.0 figure 9. relative radiant sensitivity vs. angular displacement dimensions in mm 96 12172
TEFT4300 vishay telefunken 5 (5) rev. 2, 20-may-99 www.vishay.com document number 81549 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operating systems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances ( odss ). the montreal protocol ( 1987 ) and its london amendments ( 1990 ) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2 . class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency ( epa ) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c ( transitional substances ) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay-telefunken products for any unintended or unauthorized application, the buyer shall indemnify vishay-telefunken against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 ( 0 ) 7131 67 2831, fax number: 49 ( 0 ) 7131 67 2423
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