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| may 2011 doc id 18222 rev 2 1/16 16 STW60N65M5 stfw60n65m5 n-channel 650 v, 0.049 , 46 a mdmesh? v power mosfet in to-247, to-3pf features worldwide best r ds(on) * area amongst the silicon based devices higher v dss rating high dv/dt capability excellent switching performance easy to drive 100% avalanche tested application switching applications description the devices are n-channel mdmesh? v power mosfet based on an innovative proprietary vertical process technology, which is combined with stmicroelectronics? well-known powermesh? horizontal layout structure. the resulting product has extremely low on- resistance, which is unmatched among silicon- based power mosfets, making it especially suitable for applications which require superior power density and outstanding efficiency. figure 1. internal schematic diagram order codes v dss @ t jmax r ds(on) max i d stfw60n65m5 STW60N65M5 710 v < 0.059 46 a 1 2 3 to-247 to-3pf 1 1 1 1 2 3 ! - v $ ' 3 table 1. device summary order codes marking package packaging stfw60n65m5 STW60N65M5 60n65m5 to-3pf to-247 tu b e www.st.com
contents stfw60n65m5, STW60N65M5 2/16 doc id 18222 rev 2 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 4 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 9 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 5 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 stfw60n65m5, STW60N65M5 electrical ratings doc id 18222 rev 2 3/16 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-247 to-3pf v gs gate-source voltage 25 v i d drain current (continuous) at t c = 25 c 46 a i d drain current (continuous) at t c = 100 c 29 a i dm (1) 1. pulse width limited by safe operating area drain current (pulsed) 184 a p tot total dissipation at t c = 25 c 255 79 w i ar avalanche current, repetitive or not- repetitive (pulse width limited by t j max) 12 a e as single pulse avalanche energy (starting t j = 25 c, i d = i ar , v dd = 50 v) 1400 mj dv/dt (2) 2. i sd 46 a, di/dt 400 a/s, v dd = 400 v, v peak < v (br)dss peak diode recovery voltage slope 15 v/ns v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1s; tc=25c) 3500 v t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-247 to-3pf r thj-case thermal resistance junction-case max 0.49 1.58 c/w r thj-amb thermal resistance junction-ambient max 50 c/w t l maximum lead temperature for soldering purpose 300 c electrical characteristics stfw60n65m5, STW60N65M5 4/16 doc id 18222 rev 2 2 electrical characteristics (t c = 25 c unless otherwise specified) table 4. on /off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 650 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, t c =125 c 1 100 a a i gss gate-body leakage current (v ds = 0) v gs = 25 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 3 4 5 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 23 a 0.049 0.059 table 5. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 100 v, f = 1 mhz, v gs = 0 - 6810 141 6.2 - pf pf pf c o(tr) (1) 1. c o(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss. equivalent capacitance time related v ds = 0 to 520 v, v gs = 0 -480-pf c o(er) (2) 2. c o(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss. equivalent capacitance energy related -140-pf r g intrinsic gate resistance f = 1 mhz open drain - 1 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 520 v, i d = 23 a, v gs = 10 v (see figure 17 ) - 139 34 52 - nc nc nc stfw60n65m5, STW60N65M5 electrical characteristics doc id 18222 rev 2 5/16 table 6. switching times symbol parameter test conditions min. typ. max unit t d (v) t r (v) t f (i) t c (off) voltage delay time voltage rise time current fall time crossing time v dd = 400 v, i d = 30 a, r g = 4.7 , v gs = 10 v (see figure 18 ) (see figure 21 ) - 90 11 13 16 - ns ns ns ns table 7. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 46 184 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 46 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 46 a, di/dt = 100 a/s v dd = 100 v (see figure 21 ) - 448 10 45 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 46 a, di/dt = 100 a/s v dd = 100 v, t j = 150 c (see figure 21 ) - 534 14 52 ns c a electrical characteristics stfw60n65m5, STW60N65M5 6/16 doc id 18222 rev 2 2.1 electrical characterist ics (curves) figure 2. safe operating area for to-3fp figure 3. thermal impedance for to-3fp figure 4. safe operating area for to-247 figure 5. thermal impedance for to-247 figure 6. output characteristics figure 7. transfer characteristics i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am09126v1 10 -5 10 -4 10 - 3 10 -2 10 -1 t p ( s ) 10 -2 10 -1 k 0.2 0.05 0.02 0.01 0.1 s ingle p u l s e =0.5 to 3 pf i d 100 10 1 0.1 0.1 1 100 v d s (v) 10 (a) oper a tion in thi s a re a i s limited b y m a x r d s (on) 10 s 100 s 1m s 10m s tj=150c tc=25c s ingle p u l s e am09127v1 i d 60 40 20 0 0 4 v d s (v) 8 (a) 2 6 10 8 0 100 5.5v 6v 7v 7.5v 6.5v 12 14 16 1 8 120 140 v g s =10v am0912 8 v1 i d 60 40 20 0 3 5 v g s (v) 7 (a) 4 6 8 8 0 100 9 120 140 v d s =20v am09129v1 stfw60n65m5, STW60N65M5 electrical characteristics doc id 18222 rev 2 7/16 figure 8. gate charge vs gate-source voltage figure 9. static drain-source on resistance figure 10. capacitance variations figure 11. output capacitance stored energy figure 12. normalized gate threshold voltage vs temperature figure 13. normalized on resistance vs temperature v g s 6 4 2 0 0 50 q g (nc) (v) 8 100 150 10 v dd =520v i d =2 3 a 12 3 00 200 100 0 400 500 v d s am091 3 0v1 r d s (on) 0.049 0.047 0.045 0.04 3 0 20 i d (a) ( ) 10 3 0 0.051 0.05 3 0.055 0.057 v g s =10v 40 am091 3 1v1 c 1000 100 10 1 0.1 10 v d s (v) (pf) 1 10000 100 ci ss co ss cr ss am091 3 2v1 e o ss 5 0 0 100 v d s (v) ( j) 400 200 3 00 10 15 500 600 20 25 am091 33 v1 v g s (th) 1.00 0.90 0. 8 0 0.70 -50 0 t j (c) (norm) -25 1.10 75 25 50 100 125 i d =250 a am091 3 4v1 r d s (on) 1.9 1. 3 0.9 0.5 -50 0 t j (c) (norm) -25 75 25 50 100 125 0.7 1.1 1.5 1.7 2.1 i d =2 3 a am091 3 5v1 electrical characteristics stfw60n65m5, STW60N65M5 8/16 doc id 18222 rev 2 figure 14. normalized b vdss vs temperature figure 15. switching losses vs gate resistance (1) 1. eon including reverse re covery of a sic diode bv d ss -50 0 t j (c) (norm) -25 75 25 50 100 0.9 3 0.95 0.97 0.99 1.01 1.0 3 125 1.05 1.07 i d =1ma am091 3 6v1 e 3 00 200 100 0 0 20 r g ( ) ( j) 10 3 0 400 500 600 40 i d = 3 0a v dd =400v v g s =10v eon eoff 700 8 00 am091 3 7v1 stfw60n65m5, STW60N65M5 test circuits doc id 18222 rev 2 9/16 3 test circuits figure 16. switching times test circuit for resistive load figure 17. gate charge test circuit figure 18. test circuit for inductive load switching and diode recovery times figure 19. unclamped inductive load test circuit figure 20. unclamped inductive wavefor m figure 21. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k 1k 47k 2.7k 1k 12v v i =20v=v gmax 2200 f p w i g =con s t 100 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am05540v2 id vg s vd s 90 % vd s 10 % id 90 % vg s on tdel a y-off tf a ll tri s e tcro ss -over 10 % vd s 90 % id vg s (i(t)) on -off tf a ll tri s e - )) concept w a veform for ind u ctive lo a d t u rn-off package mechanical data stfw60n65m5, STW60N65M5 10/16 doc id 18222 rev 2 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark. stfw60n65m5, STW60N65M5 package mechanical data doc id 18222 rev 2 11/16 table 8. to-3pf mechanical data dim. mm min. typ. max. a 5.30 5.70 c 2.80 3.20 d 3.10 3.50 d1 1.80 2.20 e 0.80 1.10 f 0.65 0.95 f2 1.80 2.20 g 10.30 11.50 g1 5.45 h 15.30 15.70 l9.80 10 10.20 l2 22.80 23.20 l3 26.30 26.70 l4 43.20 44.40 l5 4.30 4.70 l6 24.30 24.70 l7 14.60 15 n 1.80 2.20 r 3.80 4.20 dia 3.40 3.80 package mechanical data stfw60n65m5, STW60N65M5 12/16 doc id 18222 rev 2 figure 22. to-3pf drawing l 3 l di a l2 a c d d1 e h l5 l4 r n l6 l7 f( 3 x) f2( 3 x) g1 g 76271 3 2_c stfw60n65m5, STW60N65M5 package mechanical data doc id 18222 rev 2 13/16 table 9. to-247 mechanical data dim. mm min. typ. max. a 4.85 5.15 a1 2.20 2.60 b 1.0 1.40 b1 2.0 2.40 b2 3.0 3.40 c 0.40 0.80 d 19.85 20.15 e 15.45 15.75 e5.45 l 14.20 14.80 l1 3.70 4.30 l2 18.50 ? p 3.55 3.65 ? r 4.50 5.50 s5.50 package mechanical data stfw60n65m5, STW60N65M5 14/16 doc id 18222 rev 2 figure 23. to-247 drawing 0075 3 25_f stfw60n65m5, STW60N65M5 revision history doc id 18222 rev 2 15/16 5 revision history table 10. document revision history date revision changes 15-nov-2010 1 first release. 05-may-2011 2 document status promoted from preliminary data to datasheet. stfw60n65m5, STW60N65M5 16/16 doc id 18222 rev 2 please read carefully: information in this document is provided solely in connection with st products. stmicroelectronics nv and its subsidiaries (?st ?) reserve the right to make changes, corrections, modifications or improvements, to this document, and the products and services described he rein at any time, without notice. all st products are sold pursuant to st?s terms and conditions of sale. purchasers are solely responsible for the choice, selection and use of the st products and services described herein, and st as sumes no liability whatsoever relating to the choice, selection or use of the st products and services described herein. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted under this document. i f any part of this document refers to any third party products or services it shall not be deemed a license grant by st for the use of such third party products or services, or any intellectual property contained therein or considered as a warranty covering the use in any manner whatsoev er of such third party products or services or any intellectual property contained therein. unless otherwise set forth in st?s terms and conditions of sale st disclaims any express or implied warranty with respect to the use and/or sale of st products including without limitation implied warranties of merchantability, fitness for a parti cular purpose (and their equivalents under the laws of any jurisdiction), or infringement of any patent, copyright or other intellectual property right. unless expressly approved in writing by an authorized st representative, st products are not recommended, authorized or warranted for use in milita ry, air craft, space, life saving, or life sustaining applications, nor in products or systems where failure or malfunction may result in personal injury, death, or severe property or environmental damage. st products which are not specified as "automotive grade" may only be used in automotive applications at user?s own risk. resale of st products with provisions different from the statements and/or technical features set forth in this document shall immediately void any warranty granted by st for the st product or service described herein and shall not create or extend in any manner whatsoev er, any liability of st. st and the st logo are trademarks or registered trademarks of st in various countries. information in this document supersedes and replaces all information previously supplied. the st logo is a registered trademark of stmicroelectronics. all other names are the property of their respective owners. ? 2011 stmicroelectronics - all rights reserved stmicroelectronics group of companies australia - belgium - brazil - canada - china - czech republic - finland - france - germany - hong kong - india - israel - ital y - japan - malaysia - malta - morocco - philippines - singapore - spain - sweden - switzerland - united kingdom - united states of america www.st.com |
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