features trenchfet power mosfet 100% r g tested lead (pb)-free version is rohs compliant available si3458dv vishay siliconix document number: 70859 s-50694?rev. d, 18-apr-05 www.vishay.com 1 n-channel 60-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 60 0.10 @ v gs = 10 v 3.2 60 0.13 @ v gs = 4.5 v 2.8 (1, 2, 5, 6) d (3) g (4) s n-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm ordering information: SI3458DV-T1 SI3458DV-T1?e3 (lead (pb)-free) absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 60 v gate-source voltage v gs 20 v continuous drain current (t j = 150 c) a, b t a = 25 c i d 3.2 c on ti nuous d ra i n c urren t (t j = 150 c) a , b t a = 70 c i d 2.5 a pulsed drain current i dm 15 a single a valanche current i as 10 maximum power dissipation a, b t a = 25 c p d 2 w maximum power dissipation a, b t a = 70 c p d 1.3 w operating junction and storage temperature range t j , t stg ? 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 62.5 maximum junction-to-ambient a steady state r thja 106 c/w maximum junction-to-lead steady state r thjl 35 c/w notes a. surface mounted on fr4 board. b. t 5 sec.
si3458dv vishay siliconix www.vishay.com 2 document number: 70859 s-50694?rev. d, 18-apr-05 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static drain-source breakdown voltage v (br)dss v ds = 0 v, i d = 250 a 60 v gate threshold voltage v gs(th) v ds = v gs , i d = 250 a 1 v gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = 48 v, v gs = 0 v 1 a zero gate voltage drain current i dss v ds = 48 v, v gs = 0 v, t j = 150 c 50 a on-state drain current a i d(on) v ds = 5 v, v gs = 10 v 10 a drain source on state resistance a r v gs = 10 v, i d = 3.2 a 0.085 0.10 drain-source on-state resistance a r ds(on) v gs = 4.5 v, i d = 2.8 a 0.110 0.13 forward transconductance a g fs v ds = 4.5 v, i d = 3.2 a 8 s dynamic b total gate charge q g 8 16 gate-source charge q gs v ds = 30 v, v gs = 10 v, i d = 3.2 a 4.0 nc gate-drain charge q gd 2.0 gate resistance r g 1 3.9 turn-on delay time t d(on) 10 20 rise time t r v dd = 30 v, r l = 30 10 20 ns turn-off delay time t d(off) v dd = 30 v , r l = 30 i d 1 a, v gen = 10 v, r g = 6 20 40 ns fall time t f 10 20 source-drain rating characteristics b continuous current i s 1.7 a pulsed current i sm 15 a diode forward voltage a v sd i s = 1.7 a, v gs = 0 v 1.2 v source-drain reverse recovery time t rr i f = 1.7 a, di/dt = 100 a/ s 50 90 ns notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. stresses beyond those listed under ?absolute maximum ratings? may cause permanent damage to the device. these are stress ratin gs only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability.
si3458dv vishay siliconix document number: 70859 s-50694?rev. d, 18-apr-05 www.vishay.com 3 typical characteristics (25 c unless noted) r ds(on) ? on-resiistance (normalized) 0 3 6 9 12 15 012345 0.00 0.04 0.08 0.12 0.16 0.20 0 3 6 9 12 15 0 3 6 9 12 15 01234 0 2 4 6 8 10 02468 0.4 0.8 1.2 1.6 2.0 ? 50 ? 25 0 25 50 75 100 125 150 v gs = 10 thru 5 v 25 c t c = 125 c c rss v ds = 30 v i d = 3.2 a v gs = 10 v i d = 3.2 a v gs = 4.5 v v gs = 10 v 3 v ? 55 c 4 v output characteristics transfer characteristics gate charge on-resistance vs. drain current v ds ? drain-to-source voltage (v) ? drain current (a) i d v gs ? gate-to-source voltage (v) ? drain current (a) i d ? gate-to-source voltage (v) q g ? total gate charge (nc) v ds ? drain-to-source voltage (v) c ? capacitance (pf) v gs ? on-resistance ( r ds(on) ) i d ? drain current (a) capacitance on-resistance vs. junction t emperature t j ? junction temperature ( c) 0 100 200 300 400 500 600 0 102030405060 c oss c iss
si3458dv vishay siliconix www.vishay.com 4 document number: 70859 s-50694?rev. d, 18-apr-05 typical characteristics (25 c unless noted) ? 0.8 ? 0.6 ? 0.4 ? 0.2 ? 0.0 0.2 0.4 ? 50 ? 25 0 25 50 75 100 125 150 i d = 250 a 1.0 1.2 0.00 0.04 0.08 0.12 0.16 0.20 0246810 1 10 20 i d = 3.2 a 0.00 0.2 0.4 0.6 0.8 t j = 25 c t j = 150 c threshold v oltage variance (v) v gs(th) t j ? temperature ( c) source-drain diode forward v oltage on-resistance vs. gate-to-source voltage ? on-resistance ( r ds(on) ) v sd ? source-to-drain voltage (v) v gs ? gate-to-source voltage (v) ? source current (a) i s normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 ? 3 10 ? 2 1 10 600 10 ? 1 10 ? 4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 106 c/w 3. t jm ? t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 0.001 0 1 15 25 5 10 10 600 0.1 power (w) single pulse power time (sec) 20 100 0.01 vishay siliconix maintains worldw ide manufacturing c apability. pr oducts may be manufactured at on e of several qualified locati ons. reliability data for silicon technology and package reliability repr esent a composite of all qualified locations. for re lated documents such as package/tape drawings, par t marking, and reliability data, see http://www.vishay.com/ppg?70859 .
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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