elektronische bauelemente SMG3400 5.8a, 30v,rds(on) 28m n-channel enhancement mode power mos.fet [ d e s c r i p t i o n the SMG3400 uses advanced trench technology to provide excellent on-resistance extremely efficient and f e a t u r e s * small package outline * rohs compliant d i m m i n m a x a 2 . 7 0 3 . 1 0 b 1 . 4 0 1 . 6 0 c 1 . 0 0 1 . 3 0 d 0 . 3 5 0 . 5 0 g 1 . 7 0 2 . 1 0 h 0 . 0 0 0 . 1 0 j 0 . 1 0 0 . 2 6 k 0 . 2 0 0 . 6 0 l 0 . 8 5 1 . 1 5 s 2 . 4 0 2 . 8 0 a l l d i m e n s i o n i n m m s c - 5 9 http://www.secosgmbh.com/ any changing of specification will not be informed individual s g d b l a 1 3 2 top view h c j k gate source drain d g s 01-jun-2002 rev. a page 1 of 4 rohs compliant product the SMG3400 is universally used for all commercial-industrial applications. * * * lower gate charge cost-effectiveness device. a b s o l u t e m a x i m u m r a t i n g s p a r a m e t e r s y m b o l r a t i n g s u n i t d r a i n - s o u r c e v o l t a g e v d s 3 0 v g a t e - s o u r c e v o l t a g e v g s 1 2 v c o n t i n u o u s d r a i n c u r r e n t 3 i d @ t a = 2 5 : 5 . 8 a c o n t i n u o u s d r a i n c u r r e n t 3 i d @ t a = 7 0 : 4 . 9 a p u l s e d d r a i n c u r r e n t 1 , 2 i d m 3 0 a t o t a l p o w e r d i s s i p a t i o n p d @ t a = 2 5 : 1 . 3 8 w l i n e a r d e r a t i n g f a c t o r 0 . 0 1 w / : o p e r a t i n g j u n c t i o n a n d s t o r a g e t e m p e r a t u r e r a n g e t j , t s t g - 5 5 ~ + 1 5 0 : t h e r m a l d a t a p a r a m e t e r s y m b o l v a l u e u n i t t h e r m a l r e s i s t a n c e j u n c t i o n - a m b i e n t 3 m a x . r t h j - a 9 0 : / w free datasheet http:///
h t t p : / / w w w . s e c o s g m b h . c o m / a n y c h a n g i n g o f s p e c i f i c a t i o n w i l l n o t b e i n f o r m e d i n d i v i d u a l [ 01 -jun-2002 rev. a page 2 of 4 s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 ) : elektronische bauelemente SMG3400 5.8a, 30v,rds(on) 28m n-channel enhancement mode power mos.fet e l e c t r i c a l c h a r a c t e r i s t i c s ( t j = 2 5 : : : : u n l e s s o t h e r w i s e s p e c i f i e d ) p a r a m e t e r s y m b o l m i n . t y p . m a x . u n i t t e s t c o n d i t i o n s d r a i n - s o u r c e b r e a k d o w n v o l t a g e b v d s s 3 0 - - v v g s = 0 , i d = 2 5 0 u a g a t e t h r e s h o l d v o l t a g e v g s ( t h ) 0 . 7 - 1 . 4 v v d s = v g s , i d = 2 5 0 u a f o r w a r d t r a n s c o n d u c t a n c e g f s - 1 5 - s v d s = 5 v , i d = 5 a g a t e - s o u r c e l e a k a g e c u r r e n t i g s s - - 1 0 0 n a v g s = 1 2 v d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 2 5 : ) - - 1 u a v d s = 2 4 v , v g s = 0 d r a i n - s o u r c e l e a k a g e c u r r e n t ( t j = 5 5 : ) i d s s - - 5 u a v d s = 2 4 v , v g s = 0 - - 2 8 v g s = 1 0 v , i d = 5 . 8 a - - 3 3 v g s = 4 . 5 v , i d = 5 . 0 a s t a t i c d r a i n - s o u r c e o n - r e s i s t a n c e r d s ( o n ) - - 5 2 m v g s = 2 . 5 v , i d = 4 . 0 a t o t a l g a t e c h a r g e 2 q g - 9 . 7 1 2 g a t e - s o u r c e c h a r g e q g s - 1 . 6 - g a t e - d r a i n ( m i l l e r ) c h a n g e q g d - 3 . 1 - n c i d = 5 . 8 a v d s = 1 5 v v g s = 4 . 5 v t u r n - o n d e l a y t i m e 2 t d ( o n ) - 3 . 3 - r i s e t i m e t r - 4 . 8 - t u r n - o f f d e l a y t i m e t d ( o f f ) - 2 6 . 3 - f a l l t i m e t f - 4 . 1 - n s v d s = 1 5 v v g s = 1 0 v r g = 3 r l = 2 . 7 i n p u t c a p a c i t a n c e c i s s - 8 2 3 1 0 3 0 o u t p u t c a p a c i t a n c e c o s s - 9 9 - r e v e r s e t r a n s f e r c a p a c i t a n c e c r s s - 7 7 - p f v g s = 0 v v d s = 1 5 v f = 1 . 0 m h z g a t e r e s i s t a n c e r g - 1 . 2 3 . 6 f = 1 . 0 m h z s o u r c e - d r a i n d i o d e p a r a m e t e r s y m b o l m i n . t y p . m a x . u n i t t e s t c o n d i t i o n s f o r w a r d o n v o l t a g e 2 v s d - - 1 . 0 v i s = 1 . 0 a , v g s = 0 v r e v e r s e r e c o v e r y t i m e 2 t r r - 1 6 - n s r e v e r s e r e c o v e r y c h a r g e q r r - 8 . 9 - n c i s = 5 a , v g s = 0 v d i / d t = 1 0 0 a / s c o n t i n u o u s s o u r c e c u r r e n t ( b o d y d i o d e ) i s - - 2 . 5 a v d = v g = 0 v , v s = 1 . 0 v n o t e s : 1 . p u l s e w i d t h l i m i t e d b y m a x . j u n c t i o n t e m p e r a t u r e . 2 . p u l s e w i d t h 3 0 0 u s , d u t y c y c l e 2 % . 3 . s u r f a c e m o u n t e d o n 1 i n 2 c o p p e r p a d o f f r 4 b o a r d ; 2 7 0 / w w h e n m o u n t e d o n m i n . c o p p e r p a d . :
[ fig 5. forward characteristics of reverse diode fig 1. typical output characteristics f i g 2 . t y p i c a l o u t pu t c h a r a c t e r i s t i c s f i g 3 . o n - r e s i s t a n ce v . s . g a t e v o l t ag e fig 4. normalized on-resistance v.s. junction temperature fig 6. gate threshold voltage v.s. junction temperature 01 -jun-2002 rev. a page 3 of 4 http://www.secosgmbh.com/ any changing of specification will not be informed individua l c h a r a c t e r i s t i c s c u r v e e l ek tr on isch e b a u e lemen te smg3 4 00 5.8 a, 3 0v ,r ds(on) 2 8m n-channel enhancement mode power mos.fet 0 . 0 0 0 0 0 1 0 . 0 0 0 0 1 0 . 0 0 0 1 0 . 0 0 1 0 . 0 1 0 . 1 1 0 1
[ 01 -jun-2002 rev. a page 4 of 4 http://www.secosgmbh.com/ any changing of specification will not be informed individual f i g 9. t r an s f e r c h a r ac t e r i s t i c s f i g 10. s i n gl e p u l s e p ow e r f i g 7. g a t e c h ar ge c h ar ac t e r i s t i c s f i g 8. t yp i c al c ap ac i t an c e c h ar ac t e r i s t i c s f i g 1 1. n or m a l i z e d t h e r m a l t r an s i e n t i m p e d an c e , ju n c t i on t o a m b i e n t e l ek tr on isch e b a u e lemen te smg3 4 00 5.8 a, 3 0v ,r ds(on) 2 8m n-channel enhancement mode power mos.fet
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