features trenchfet power mosfets symetrical dual p-channel applications battery switch for portable devices computers - bus switch - load switch si3983dv vishay siliconix new product document number: 72316 s-31404?rev. a, 14-jul-03 www.vishay.com 1 dual p-channel 20-v (d-s) mosfet product summary v ds (v) r ds(on) ( ) i d (a) 0.110 @ v gs = -4.5 v -2.5 -20 0.145 @ v gs = -2.5 v -2.0 0.220 @ v gs = -1.8 v -1.0 s 2 g 2 d 2 p-channel mosfet tsop-6 top view 6 4 1 2 3 5 2.85 mm 3 mm d2 g2 s1 s2 d1 g1 s 1 g 1 d 1 p-channel mosfet ordering information: SI3983DV-T1 absolute maximum ratings (t a = 25 c unless otherwise noted) parameter symbol 5 secs steady state unit drain-source voltage v ds -20 v gate-source v oltage v gs 8 v continuous drain current (t j = 150 c) a t a = 25 c i d -2.5 -2.1 c on ti nuous d ra i n c urren t (t j = 150 c) a t a = 70 c i d -2.0 -1.7 a pulsed drain current i dm -8 a continuous diode current (diode conduction) a i s -1.05 -0.75 maximum power dissipation a t a = 25 c p d 1.15 0.83 w maximum power dissipation a t a = 70 c p d 0.73 0.53 w operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit mi j ti tabit a t 5 sec r 93 110 maximum junction-to-ambient a steady state r thja 130 150 c/w maximum junction-to-foot (drain) steady state r thjf 90 90 c/w notes a. surface mounted on 1? x 1? fr4 board.
si3983dv vishay siliconix new product www.vishay.com 2 document number: 72316 s-31404?rev. a, 14-jul-03 specifications (t j = 25 c unless otherwise noted) parameter symbol test condition min typ max unit static gate threshold voltage v gs(th) v ds = v gs , i d = - 250 a -0.40 -1.1 v gate-body leakage i gss v ds = 0 v, v gs = 8 v 100 na zero gate voltage drain current i dss v ds = -16 v, v gs = 0 v -1 a zero gate voltage drain current i dss v ds = -16 v, v gs = 0 v, t j = 85 c -10 a on-state drain current a i d(on) v ds = -5 v, v gs = -4.5 v -5 a v gs = -4.5 v, i d = -2.5 a 0.086 0.110 drain-source on-state resistance a r ds(on) v gs = -2.5 v, i d = - 2.0 a 0.116 0.145 ds(on) v gs = -1.8 v, i d = - 1.0 a 0.170 0.220 forward t ransconductance a g fs v ds = -5 v, i d = -2.5 a 6 s diode forward voltage a v sd i s = -1.05 a, v gs = 0 v -0.8 -1.1 v dynamic b total gate charge q g 5 7.5 gate-source charge q gs v ds = -10 v, v gs = -4.5 v, i d = -2.5 a 0.68 nc gate-drain charge q gd 1.30 turn-on delay time t d(on) 28 45 rise time t r v dd = -10 v, r l = 10 55 85 turn-off delay time t d(off) v dd = -10 v , r l = 10 i d -1 a, v gen = -4.5 v, r g = 6 55 85 ns fall time t f 32 50 source-drain reverse recovery time t rr i f = -1.05 a, di/dt = 100 a/ s 25 40 notes a. pulse test; pulse width 300 s, duty cycle 2%. b. guaranteed by design, not subject to production testing. typical characteristics (25 c unless noted) 0 1 2 3 4 5 6 7 8 012345 0 1 2 3 4 5 6 7 8 0.0 0.5 1.0 1.5 2.0 2.5 output characteristics transfer characteristics v ds - drain-to-source voltage (v) - drain current (a) i d v gs - gate-to-source voltage (v) - drain current (a) i d v gs = 5 thru 2.5 v 2 v t c = -55 c 125 c 1.5 v 25 c
si3983dv vishay siliconix new product document number: 72316 s-31404?rev. a, 14-jul-03 www.vishay.com 3 typical characteristics (25 c unless noted) 0.00 0.15 0.30 0.45 0.60 0.75 012345678 0 130 260 390 520 650 0 4 8 12 16 20 on-resistance vs. drain current v ds - drain-to-source voltage (v) c - capacitance (pf) - on-resistance ( r ds(on) ) i d - drain current (a) capacitance v gs = 1.8 v v gs = 4.5 v c oss c iss v gs = 2.5 v c rss 0.0 1.3 2.6 3.9 5.2 6.5 0123456 0.6 0.8 1.0 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 gate charge - gate-to-source voltage (v) q g - total gate charge (nc) v gs on-resistance vs. junction temperature v gs = 4.5 v i d = 2.5 a t j - junction temperature ( c) (normalized) - on-resistance ( r ds(on) ) v ds = 10 v i d = 2.5 a 1.2 1.5 0.1 1 10 0.00 0.3 0.6 0.9 t j = 25 c t j = 150 c source-drain diode forward voltage v sd - source-to-drain voltage (v) - source current (a) i s 0.0 0.1 0.2 0.3 0.4 0.5 012345 v gs - gate-to-source voltage (v) on-resistance vs. gate-to-source voltage - on-resistance ( r ds(on) ) i d = 2.5 a
si3983dv vishay siliconix new product www.vishay.com 4 document number: 72316 s-31404?rev. a, 14-jul-03 typical characteristics (25 c unless noted) -0.2 -0.1 0.0 0.1 0.2 0.3 0.4 -50 -25 0 25 50 75 100 125 150 threshold voltage t j - temperature ( c) i d = 250 a variance (v) v gs(th) 0.01 0 1 6 8 2 4 10 30 0.1 power (w) single pulse power (junction-to-ambient) time (sec) safe operating area, junction-to-case v ds - drain-to-source voltage (v) 10 0.1 0.1 1 10 100 0.01 1 ms - drain current (a) i d 1 limited by r ds(on) t c = 25 c single pulse 10 ms 100 ms dc 1 s 10 s normalized thermal transient impedance, junction-to-ambient square wave pulse duration (sec) normalized effective transient thermal impedance 2 1 0.1 0.01 10 -3 10 -2 1 10 600 10 -1 10 -4 duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse 100 1. duty cycle, d = 2. per unit base = r thja = 130 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm
si3983dv vishay siliconix new product document number: 72316 s-31404?rev. a, 14-jul-03 www.vishay.com 5 typical characteristics (25 c unless noted) 10 -3 10 -2 110 10 -1 10 -4 2 1 0.1 0.01 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 normalized thermal transient impedance, junction-to-foot square wave pulse duration (sec) normalized effective transient thermal impedance
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