1 p-channel 100 v (d-s) mosfet feature s ? halogen-free accor ding to iec 61249-2-21 definition ? trenchfet power mosfet ?100 % r g and uis tested ? compliant to rohs directive 2002/95/ec applications ? a ctive clamp in intermediate dc/dc power supplies ? h-bridge high side switch for lighting application notes: a. surface mounted on 1" x 1" fr4 board. b. t = 10 s. pr oduct summary v ds (v ) r ds(on) ( ? )i d (a) q g (t y p.) - 100 0.295 at v gs = - 10 v - 15 23.2 nc 0.315 at v gs = - 6 v - 15 absolute maximum ratings (t a = 25 c, unless otherwise noted) p a rameter symbol limit unit drain-source voltage v ds - 100 v gate-source v o ltage v gs 20 c ontin uous drain current (t j = 150 c) t c = 2 5 c i d - 1 5 a t c = 7 0 c - 9.1 t a = 2 5 c - 2.3 a, b t a = 7 0 c - 1.9 a, b pulsed dr ain current i dm - 19 contin uous source-drain diode current t c = 2 5 c i s - 15 t a = 25 c - 3 a, b a v alanche current l = 0.1 mh i as 15 single-pulse a v alanche energy e as 11.25 mj ma ximum power dissipation t c = 2 5 c p d 52 w t c = 7 0 c 33 t a = 2 5 c 3.7 a, b t a = 7 0 c 2.4 a, b oper at ing junction and storage temperature range t j , t stg - 50 to 150 c solder ing recommendations (peak temperature) 260 t o-252 s gd t op vi ew s g d p-channel mosfet dt 8 3 www.din-tek.jp
2 no t es: a. surface mounted on 1" x 1" fr4 board. b. maximum under steady state conditions is 81 c/w. notes: a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design, not s ubject to production testing. st resses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. t h ermal resistance ratings p aram eter symbol typical maximum unit maximum junction-to-ambient a, b t ?? 10 s r thj a 26 33 c /w maximum junction-to-case (drain) steady state r thjc 1.9 2.4 s pecif ications (t j = 2 5 c, unless otherwise noted) p aram eter symbol test conditions min. typ. max. unit static drain-source breakdo wn voltage v ds v gs = 0 v , i d = - 250 a - 100 v v ds t emper ature coefficient ? v ds /t j i d = - 250 a - 165 mv/c v gs( t h) t emperature co efficient ? v gs(t h) /t j - 6.6 gate-s o urce threshold voltage v gs(t h) v ds = v gs , i d = - 250 a - 2 - 4 v gate-source leakage i gss v ds = 0 v , v gs = 20 v 1 0 0 na zero gate voltage drain current i dss v ds = - 10 0 v , v gs = 0 v - 1 a v ds = - 10 0 v , v gs = 0 v , t j = 55 c - 10 on-state drain current a i d( on ) v ds ? - 5 v , v gs = - 10 v - 15 a drain-source on-state resistance a r ds( o n) v gs = - 10 v , i d = - 4 a 0.2 45 0.295 ? v gs = - 6 v, i d = - 3 a 0.2 60 0.315 forward transconductance a g fs v ds = - 15 v , i d = 4 a 12 s dy nam ic b inpu t capacita nce c iss v ds = - 50 v , v gs = 0 v , f = 1 mhz 1190 pf output capacitance c oss 61 re v erse transfer capacitance c rs s 42 t o tal gate charge q g v ds = - 75 v , v gs = - 10 v , i d = - 3 a 27 .5 42 nc v ds = - 7 5 v , v gs = - 6 v , i d = - 3 a 23 .2 35 gate-source charge q gs 5. 4 gate- drain charge q gd 8.4 g ate resistance r g f = 1 mhz 1.3 6.1 9.2 ? tu r n - o n d e l ay t i m e t d(o n ) v dd = - 75 v , r l = 25 ? i d ? - 3 a, v gen = - 6 v , r g = 1 ? 20 30 ns rise time t r 95 145 t urn-off delaytime t d(o f f) 38 60 fa ll time t f 34 51 tu r n - o n d e l ay t i m e t d(o n ) v dd = - 75 v , r l = 25 ? i d ? - 3 a, v gen = - 10 v, r g = 1 ? 11 18 rise time t r 28 42 t urn-off delaytime t d(o f f) 52 78 fa ll time t f 35 53 drain - source body diode characteristics continuous source-drain diode current i s t c = 25 c - 13 a pulse diode forward current a i sm - 15 body diode v o ltage v sd i s = - 3 a - 0.8 - 1.2 v body diode reverse recovery time t rr i f = - 4 a, di/dt = 100 a/s, t j = 25 c 65 90 ns body diode reverse recovery charge q rr 180 270 nc reverse recovery fall time t a 45 ns re v erse recovery rise time t b 20 dt 8 3 www.din-tek.jp
3 typica l c haracteristics (25 c, unless otherwise noted) output char acteristics on-resistance vs. drain current and gate voltage gate charge 0 4 8 12 16 20 02468 10 v gs = 10 thru 6 v 4 v v ds - drain-to-sou rce v oltage (v ) ) a( tnerr u c niard -i d 5 v 0.1 0.2 0.3 0.4 0.5 0.6 048 12 16 20 v gs = 10 v i d - drain cu rrent (a) v gs = 6 v r ) no(sd () ecnatsiser-no - 0 2 4 6 8 10 0 6 12 1 8 24 30 i d = 3 a ) v ( egatlo v ecr u os-ot-etag - q g - t otal gate charge (nc) v s g v ds = 100 v v ds = 250 v v ds = 75 v transfer ch aracteristics capacitance on-resistance vs. junction temperature 0.0 0.4 0.8 1.2 1.6 2 . 0 0123456 25 c t c = 125 c - 55 c v gs - gate-to-sou rce v oltage (v ) ) a( tnerr u c niard -i d c rss 0 340 680 1020 1360 1700 02 0 4060 8 0 100 c oss c is s v ds - drain-to-sou rce v oltage (v ) ) fp( ecnaticapac - c 0.4 0.7 1.0 1.3 1.6 1.9 2 . 2 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v t j - ju nction t emperatu re (c) r )no(s d e cnatsiser-no - ) dezilamro n ( v gs = 6 v i d = 4 a dt 8 3 www.din-tek.jp
4 ty pi cal characteristics (25 c, unless otherwise noted) sour ce-drain diode forward voltage threshold voltage 0.1 10 100 v sd ) a( tnerr u c ecr u os -i s 1.2 1.5 0.00 0.3 0.6 0.9 - sou rce-to-drain v oltage (v ) 25 c t j = 150 c 1 - 0.5 - 0.2 0.1 0.4 0.7 1.0 - 50 - 25 0 25 50 75 100 125 150 t j - t emperatu re (c) v ) ht(sg ) v ( i d = 250 a i d = 5 ma on-resistance vs. gate-to-so urce voltage single pulse power, junction-to-ambient 0.0 0.4 0.8 1.2 1.6 2 . 0 0123 4567 8 910 v gs - gate-to-sou rce v oltage (v ) r ) no(sd () ecnatsiser-no ecr u os-ot-niard - 25 c 125 c 0 30 50 10 20 ) w ( re w op t ime (s) 40 10 1 0.1 100 0.01 safe op erating area, junction-to-ambient 1 m s s 10 m 10 m s s 100 m 100 m s s dc dc 1 1 s s 10 10 s s 100 100 1 1 0.0 0.0 1 1 1 0 100 100 0.01 0.01 10 10 ) ) a a ( ( t t n n e e r r r r u u c c n n i i a a r r d d ? ? i i d d 0.1 0.1 0.1 0.1 v v ds s ? drain-to-so urce ? drain-to-source v oltage (v oltage (v ) ) *v *v g s s minimu m minim u m v v g s s at which at which r r ds(on ds(on ) ) is is specified specified t t a a = 25 c = 25 c sin s in g le le p u ls e e *limited by *limited by r r ds(on ds( on ) ) 100 1 11 0 1 0 0 0.01 10 )a ( tnerr u c niard -i d 0.1 v ds - drain-to-sou rce v oltage (v ) * v gs minimu m v gs at w hich r ds(on) is specified 0.1 1000 t a = 25 c single pu lse limited b y r ds(on) 1 ms 10 ms 100 ms 1 s 10 s dc * dt 8 3 www.din-tek.jp
5 typica l c haracteristics (25 c, unless otherwise noted) * t he power dissipation pd is based on t j( ma x) = 1 50 c, using junction-to-case thermal resistance, and is more useful in settling the upper dissipation limit for cases where additional heatsinking is used. it is used to determine the current rating, when this rating falls below the package limi t. current derati ng* 0 2 4 6 8 10 0 2 55075100125150 i d ) a( tnerr u c niard - t c - case t e mperat u re (c) pow e r, junction-to-case 0 13 26 39 52 6 5 0 25 50 75 100 125 150 t c - case t e mperat u re (c) ) w ( re w op pow e r, junction-to-ambient 0.0 0.4 0.8 1.2 1.6 2.0 0 25 50 75 100 125 150 t c - case t emperat u re (c) power (w) dt 8 3 www.din-tek.jp
6 ty pi cal characteristics (25 c, unless otherwise noted) norm alized t hermal transient im pedance, junction-to-ambient 10 -3 10 -2 10 -1 100 s quare w a v e pu lse d u ration (s) 10 1000 1 0.1 0.01 t neisnart e v itceffe dezilamro n ecnadepmi lamreht 1 10 -4 0.2 0.1 0.05 0.02 single p ulse d u ty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 65 c 3. t jm ? t = p dm z thja (t) t 1 t 2 4. surface mounted notes: t 1 t 2 p dm no rmalized t hermal transient impedance, junction-to-foot 10 -3 10 -2 10 -1 10 1 -4 1 0.1 0.01 s quare w a v e pu lse d u ration (s) t neisnart e v itceffe dezilamro n ecnadepmi lamreht 0.2 0.1 0.05 0.02 single p ulse d u ty cycle = 0.5 dt 8 3 www.din-tek.jp
1 to-252aa case outline no te ? dimension l3 is for reference only. l3 d l4 l5 b b2 e1 e1 d1 c a1 gage plane height (0.5 mm) e b3 e c2 a l h millimeters i nches dim. min. max. min. max. a 2.18 2.38 0.086 0.094 a1 - 0.127 - 0.005 b 0.64 0.88 0.025 0.035 b2 0.76 1.14 0.030 0.045 b3 4.95 5.46 0.195 0.215 c 0.46 0.61 0.018 0.024 c2 0.46 0.89 0.018 0.035 d 5.97 6.22 0.235 0.245 d1 5.21 - 0.205 - e 6.35 6.73 0.250 0.265 e1 4.32 - 0.170 - h 9.40 10.41 0.370 0.410 e 2.28 bsc 0.090 bsc e1 4.56 bsc 0.180 bsc l 1.40 1.78 0.055 0.070 l3 0.89 1.27 0.035 0.050 l4 - 1.02 - 0.040 l5 1.14 1.52 0.045 0.060 ecn: x12-0247 -rev. m, 24-dec-12 dwg: 5347 package information www.din-tek.jp
1 application note reco mmended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index application note www.din-tek.jp
1 disclaimer all pro duct, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. din-tek intertechnology, inc., its affiliates, agents, and employee s, and all persons acting on it s or their behalf (collectivel y, din-tek ), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any o ther disclosure relating to any product. din-tek makes no warranty, repres entation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, din-tek disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all i mplied warranties, including warra nties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on din-tek s knowledge of typical requirements that are often placed on din-tek products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customers responsib ility to validate that a particu lar product with the properties descri bed in the product specification is suitable fo r use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customers technical experts. product specifications do not expand or otherwise modify din-tek s terms and condit ions of purchase, including but not limited to the warranty expressed therein. except as expressly indicate d in writing, din-tek products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the din-tek product could result in personal injury or death. customers using or selling din-tek products not expressly indicated for use in such applications do so at their own risk. pleas e contact authorized din-tek personnel to ob tain written terms and conditions regarding products designed for such applications. no license, express or implied, by estoppel or otherwise, to any intellectual prope rty rights is granted by this document or by any conduct of din-tek . product names and markings noted herein may be trad emarks of their respective owners. material category policy din-tek intertech nology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the euro pean parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - recast, unless otherwis e specified as non-compliant. please note that some din-tek documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. din-tek intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some din-tek documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards. legal disclaimer notice www.din-tek.jp
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