vishay gzf3v6c to gzf91c document number 85769 rev. 3, 21-feb-03 vishay semiconductors www.vishay.com 1 17249 zener diodes \ features ? silicon planar power zener diodes. low profile surface-mount package. low leakage current high temperature soldering: 260 c/10 sec. at terminals mechanical data case: jedec do-219ab (smf) plastic case packaging codes/options: g1/10 k per 13 " reel, (8 mm tape), 50 k/box g2/3 k per 7 " reel, (8 mm tape), 30 k/box weight: approx. 0.01 g absolute maximum ratings t amb = 25 c, unless otherwise specified 1) mounted on epoxy glass pcb with 3 x 3 mm, cu pads ( 40 m thick) maximum thermal resistance t amb = 25 c, unless otherwise specified 1) mounted on epoxy glass pcb with 3 x 3 mm, cu pads ( 40 m thick) parameter te s t c o n d i t i o n symbol value unit zener current (see table "characteristics") see page 2 power dissipation t a = 25 c p tot 800 1) mw parameter symbol value unit thermal resistance junction to ambient air 1) r ja 180 k/w maximum junction temperature t j 150 c storage temperature range t stg - 55 to + 150 c
www.vishay.com 2 document number 85769 rev. 3, 21-feb-03 vishay gzf3v6c to gzf91c vishay semiconductors electrical characteristics maximum v f = 1.2 v at i f = 200 ma 1) pulse test: tp 5 ms partnumber marking code zener voltage range 1) differential resistance temperature coefficient tes t current reverse current at reverse voltage v z @ i zt r dif @ i z z @ i z i zt i r v r v ? %/c ma a v min max typ max min max max gzf3v6c w5 3.4 3.8 4 8 -0.14 -0.04 100 100 1 gzf3v9c w6 3.7 4.1 4 8 -0.14 -0.04 100 50 1 gzf4v3c w7 4 4.6 4 7 -0.12 -0.02 100 25 1 gzf4v7c w8 4.4 5 3 7 -0.1 0 100 10 1 gzf5v1c w9 4.8 5.4 3 6 -0.08 -0.2 100 5 1 gzf5v6c wa 5.2 6 2 4 -0.04 0.04 100 10 2 gzf6v2c wb 5.8 6.6 2 3 -0.01 0.06 100 5 2 gzf6v8c wc 6.4 7.2 1 3 0 0.07 100 10 3 gzf7v5c wd 7 7.9 1 2 0 0.07 100 50 3 gzf8v2c we 7.7 8.7 1 2 0.03 0.08 100 10 3 gzf9v1c wf 8.5 9.6 2 4 0.03 0.08 50 10 5 gzf10c wg 9.4 10.6 2 4 0.05 0.09 50 7 7.5 gzf11c wh 10.4 11.6 4 7 0.05 0.1 50 4 8.2 gzf12c wi 11.4 12.7 4 7 0.05 0.1 50 3 9.1 gzf13c wk 12.4 14.1 5 10 0.05 0.1 50 2 10 gzf15c wl 13.8 15.6 5 10 0.05 0.1 50 1 11 gzf16c wm 15.3 17.1 6 15 0.06 0.11 25 1 12 gzf18c wn 16.8 19.1 6 15 0.06 0.11 25 1 13 gzf20c wo 18.8 21.2 6 15 0.06 0.11 25 1 15 gzf22c wp 20.8 23.3 6 15 0.06 0.11 25 1 16 gzf24c wr 22.8 25.6 7 15 0.06 0.11 25 1 18 gzf27c ws 25.1 28.9 7 15 0.06 0.11 25 1 20 gzf30c wt 28 32 8 15 0.06 0.11 25 1 22 gzf33c wu 31 35 8 15 0.06 0.11 25 1 24 gzf36c ww 34 38 21 40 0.06 0.11 10 1 27 gzf39c wx 37 41 21 40 0.06 0.11 10 1 30 gzf43c wy 40 46 24 45 0.07 0.12 10 1 33 gzf47c wz 44 50 24 45 0.07 0.12 10 1 36 gzf51c x1 48 54 25 60 0.07 0.12 10 1 39 gzf56c x2 52 60 25 60 0.07 0.12 10 1 43 gzf62c x3 58 66 25 80 0.08 0.13 10 1 47 gzf68c x4 64 72 25 80 0.08 0.13 10 1 51 gzf75c x5 70 79 30 100 0.08 0.13 10 1 56 gzf82c x6 77 87 30 100 0.08 0.13 10 1 62 gzf91c x7 85 96 60 200 0.09 0.13 5 1 68
vishay gzf3v6c to gzf91c document number 85769 rev. 3, 21-feb-03 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. forward characteristics figure 2. admissible power dissipation vs. ambient temperature figure 3. capacitance vs. zener voltage 17364 i f v f 0 0.2 0.4 0.6 0.8 1v 10 10 10 10 10 10 10 10 1 -1 -2 -3 -4 -5 2 3 ma t j =25c t j = 100 c p tot mw 800 600 400 200 0 200 c 100 t amb 17365 1 23 4 5 10 23 4 5 100 v v z 10 2 3 4 5 7 100 2 3 4 5 7 1000 pf c tot t j =25c v r =2v v r =1v v r =1v v r =2v 17366
www.vishay.com 4 document number 85769 rev. 3, 21-feb-03 vishay gzf3v6c to gzf91c vishay semiconductors package dimensions in mm mounting pad layout t op view 1.0 0.2 1.8 0.1 2.8 0.1 0.98 0.1 0.05 - 0.30 5 5 z cathode band detail z enlarged 0.00 - 0.10 0.60 0.25 3.7 0.2 17247 1.6 1.2 1.2 17248
vishay gzf3v6c to gzf91c document number 85769 rev. 3, 21-feb-03 vishay semiconductors www.vishay.com 5 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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