? semiconductor components industries, llc, 2006 march, 2006 ? rev. 2 1 publication order number: ntjs3151/d NTJS3151P trench power mosfet 12 v, 3.3 a, single p ? channel, esd protected sc ? 88 features ? leading trench technology for low r ds(on) extending battery life ? sc ? 88 small outline (2x2 mm, sc70 ? 6 equivalent) ? gate diodes for esd protection ? pb ? free packages are available applications ? high side load switch ? cell phones, computing, digital cameras, mp3s and pdas maximum ratings (t j = 25 c unless otherwise stated) parameter symbol value units drain ? to ? source voltage v dss ? 12 v gate ? to ? source voltage v gs 12 v continuous drain current (note 1) steady state t a = 25 c i d ? 2.7 a t a = 85 c ? 2.0 t 5 s t a = 25 c ? 3.3 power dissipation (note 1) steady state t a = 25 c p d 0.625 w pulsed drain current t p = 10 s i dm ? 8.0 a operating junction and storage temperature t j , t stg ? 55 to 150 c source current (body diode) i s ? 0.8 a lead temperature for soldering purposes (1/8? from case for 10 s) t l 260 c thermal resistance ratings (note 1) parameter symbol max units junction ? to ? ambient ? steady state r ja 200 c/w junction ? to ? ambient ? t 5 s r ja 141 junction ? to ? lead ? steady state r jl 102 stresses exceeding maximum ratings may damage the device. maximum ratings are stress ratings only. functional operation above the recommended operating conditions is not implied. extended exposure to stresses above the recommended operating conditions may affect device reliability. 1. surface mounted on fr4 board using 1 in sq pad size (cu area = 1.127 in sq [1 oz] including traces). sc ? 88/sot ? 363 case 419b style 28 marking diagram & pin assignment http://onsemi.com see detailed ordering and shipping information in the package dimensions section on page 5 of this data sheet. ordering information tj m 1 6 1 tj = device code m = date code = pb ? free package dds ddg (note: microdot may be in either location) v (br)dss r ds(on) typ i d max ? 12 v 45 m @ ? 4.5 v 67 m @ ? 2.5 v 133 m @ ? 1.8 v ? 3.3 a top view sc ? 88 (sot ? 363) d d s d d 6 5 4 1 2 3 g s d g 3 k
NTJS3151P http://onsemi.com 2 electrical characteristics (t j =25 c unless otherwise stated) parameter symbol test condition min typ max unit off characteristics drain ? to ? source breakdown voltage v (br)dss v gs = 0 v, i d = ? 250 a ? 12 v drain ? to ? source breakdown voltage temperature coefficient v (br)dss /t j 10 mv/ c zero gate voltage drain current i dss v gs = ? 9.6 v, v ds = 0 v t j = 25 c ? 1.0 a t j = 125 c ? 2.5 gate ? to ? source leakage current i gss v ds = 0 v, v gs = 4.5 v 1.5 a v ds = 0 v, v gs = 12 v 10 ma on characteristics (note 2) gate threshold voltage v gs(th) v gs = v ds , i d = 100 a ? 0.40 v negative threshold temperature coefficient v gs(th) /t j 3.4 mv/ c drain ? to ? source on resistance r ds(on) v gs = ? 4.5 v, i d = ? 3.3 a 45 60 m v gs = ? 2.5 v, i d = ? 2.9 a 67 90 v gs = ? 1.8 v, i d = ? 1.0 a 133 160 forward transconductance g fs v gs = ? 10 v, i d = ? 3.3 a 15 s charges and capacitances input capacitance c iss v gs = 0 v, f = 1.0 mhz, v ds = ? 12 v 850 pf output capacitance c oss 170 reverse transfer capacitance c rss 110 total gate charge q g(tot) v gs = ? 4.5 v, v ds = ? 5.0 v, i d = ? 3.3 a 8.6 nc gate ? to ? source charge q gs 1.3 gate ? to ? drain charge q gd 2.2 gate resistance r g 3000 switching characteristics (note 3) turn ? on delay time t d(on) v gs = ? 4.5 v, v dd = ? 6.0 v, i d = ? 1.0 a, r g = 6.0 0.86 s rise time t r 1.5 turn ? off delay time t d(off) 3.5 fall time t f 3.9 drain ? source diode characteristics (note 2) forward diode voltage v sd v gs = 0 v, i s = ? 3.3 a t j = 25 c ? 0.85 ? 1.2 v t j = 125 c ? 0.7 2. pulse test: pulse width 300 s, duty cycle 2%. 3. switching characteristics are independent of operating junction temperatures.
NTJS3151P http://onsemi.com 3 typical performance curves (t j = 25 c unless otherwise noted) ? 2 v 125 c 0 8 6 3 2 ? v ds , drain ? to ? source voltage (volts) ? i d, drain current (amps) 2 0 1 figure 1. on ? region characteristics 0 8 1.5 12 0.5 0 4.5 figure 2. transfer characteristics ? v gs , gate ? to ? source voltage (volts) 8 1000 100 figure 3. on ? resistance vs. drain current and temperature ? v ds , drain ? to ? source voltage (volts) ? i dss, leakage current (na) ? i d, drain current (amps) 0.5 3.5 0 figure 4. on ? resistance vs. drain current and gate voltage ? i d, drain current (amps) ? 50 0 ? 25 25 1.0 0.8 0.6 0.4 0 50 125 100 figure 5. on ? resistance variation with temperature t j , junction temperature ( c) t j = 25 c 100000 2 t j = ? 55 c v gs = 0 v 0.1 75 150 t j = 25 c i d = ? 3.3 a v gs = ? 4.5 v r ds(on), drain ? to ? source resistance (normalized) 25 c r ds(on), drain ? to ? source resistance ( ) 2.0 v gs = ? 4.5 v ? 1.2 v 012 ? 1.4 v ? 1.6 v ? 2.4 v 0.075 0.05 45 10000 1.5 2.5 7.5 0.025 v gs = ? 4.5 v figure 6. drain ? to ? source leakage current vs. voltage 0.2 ? i d, drain current (amps) 0.5 0 r ds(on), drain ? to ? source resistance ( ) v gs = ? 4.5 v 0.1 0.4 v gs = ? 2.5 v 0.3 4 10 t j = 125 c t j = ? 55 c 0.2 t j = 25 c v gs = ? 1.8 v 1.8 1.6 1.4 1.2 t j = 125 c t j = 150 c 2.5 3 2 4 6 v ds ? 12 v v gs = ? 3.4 v 4 3.5 6.5 4.5 5.5 0.5 3.5 1.5 2.5 7.5 6.5 4.5 5.5 46
NTJS3151P http://onsemi.com 4 typical performance curves (t j = 25 c unless otherwise noted) v gs = 0 v 4 08 1600 600 400 200 0 12 gate ? to ? source or drain ? to ? source voltage (volts) c, capacitance (pf) 0 4 1 0 q g , total gate charge (nc) ? v gs, gate ? to ? source voltage (volts) t j = 25 c c oss c iss c rss i d = ? 3.3 a t j = 25 c 1000 6 4 2 3 q2 q1 10 1 1000 100 100 r g , gate resistance (ohms) t, time (ns) v dd = ? 6.0 v i d = ? 1.0 a v gs = ? 4.5 v 2 800 4.5 t d(off) t d(on) t f t r 10 2 0.6 0 ? v sd , source ? to ? drain voltage (volts) ? i s , source current (amps) v gs = 0 v t j = 25 c 0.7 0.1 0 3 figure 7. capacitance variation figure 8. gate ? to ? source voltage vs. total gate charge figure 9. resistive switching time variation vs. gate resistance figure 10. diode forward voltage vs. current 6 1400 810 qt 10000 0.2 0.5 0.3 1 2 4 0.4 1200 3.5 2.5 1.5 0.5 0.8 0.9
NTJS3151P http://onsemi.com 5 ordering information device package shipping ? NTJS3151Pt1 sc ? 88 3000 tape & reel NTJS3151Pt1g sc ? 88 (pb ? free) 3000 tape & reel NTJS3151Pt2 sc ? 88 3000 tape & reel NTJS3151Pt2g sc ? 88 (pb ? free) 3000 tape & reel ?for information on tape and reel specifications, including part orientation and tape sizes, please refer to our tape and reel packaging specifications brochure, brd8011/d.
NTJS3151P http://onsemi.com 6 package dimensions notes: 1. dimensioning and tolerancing per ansi y14.5m, 1982. 2. controlling dimension: inch. 3. 419b ? 01 obsolete, new standard 419b ? 02. e 0.2 (0.008) mm 123 d e a1 a a3 c l 654 ? e ? b 6 pl sc ? 88/sc70 ? 6/sot ? 363 case 419b ? 02 issue w dim min nom max millimeters a 0.80 0.95 1.10 a1 0.00 0.05 0.10 a3 b 0.10 0.21 0.30 c 0.10 0.14 0.25 d 1.80 2.00 2.20 0.031 0.037 0.043 0.000 0.002 0.004 0.004 0.008 0.012 0.004 0.005 0.010 0.070 0.078 0.086 min nom max inches 0.20 ref 0.008 ref h e h e e 1.15 1.25 1.35 e 0.65 bsc l 0.10 0.20 0.30 2.00 2.10 2.20 0.045 0.049 0.053 0.026 bsc 0.004 0.008 0.012 0.078 0.082 0.086 mm inches scale 20:1 0.65 0.025 0.65 0.025 0.50 0.0197 0.40 0.0157 1.9 0.0748 *for additional information on our pb ? free strategy and soldering details, please download the on semiconductor soldering and mounting techniques reference manual, solderrm/d. soldering footprint* style 28: pin 1. drain 2. drain 3. gate 4. source 5. drain 6. drain on semiconductor and are registered trademarks of semiconductor components industries, llc (scillc). scillc reserves the right to make changes without further notice to any products herein. scillc makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does scillc assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including wi thout limitation special, consequential or incidental damages. ?typical? parameters which may be provided in scillc data sheets and/or specifications can and do vary in different application s and actual performance may vary over time. all operating parameters, including ?t ypicals? must be validated for each customer application by customer?s technical experts. scillc does not convey any license un der its patent rights nor the rights of others. scillc products are not designed, intended, or authorized for use as components in systems intended f or surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the scillc product could create a situation where personal injury or death may occur. should buyer purchase or use scillc products for any such unintended or unauthorized application, buyer shall indemnify and hold scillc and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, direct ly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that scillc was negligent regarding the design or manufacture of the part. scillc is an equal opportunity/affirmative action employer. this literature is subject to all applicable copyright laws and is not for resale in a ny manner. publication ordering information n. american technical support : 800 ? 282 ? 9855 toll free usa/canada japan : on semiconductor, japan customer focus center 2 ? 9 ? 1 kamimeguro, meguro ? ku, tokyo, japan 153 ? 0051 phone : 81 ? 3 ? 5773 ? 3850 NTJS3151P/d literature fulfillment : literature distribution center for on semiconductor p.o. box 61312, phoenix, arizona 85082 ? 1312 usa phone : 480 ? 829 ? 7710 or 800 ? 344 ? 3860 toll free usa/canada fax : 480 ? 829 ? 7709 or 800 ? 344 ? 3867 toll free usa/canada email : orderlit@onsemi.com on semiconductor website : http://onsemi.com order literature : http://www.onsemi.com/litorder for additional information, please contact your local sales representative.
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