1 these miniature su rface mount mosfets utilize a high cell densit y trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical applications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. n & p-channel 32-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe tsop-6 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature v ds (v) r ds(on) ( ? )i d (a) 0.063 @ v gs = 10v 3.7 0.090 @ v gs = 4.5v 3.1 0.112 @ v gs = -10v -2.7 0.172 @ v gs = -4.5v -2.2 30 product summary -30 symbol n-channe l p-channe l units v ds 30 -30 v gs 20 20 t a =25 o c 3.7 -2.7 t a =70 o c2.9-2.1 i dm 8 -8 i s 1.05 -1.05 a t a =25 o c t a =70 o c t j , t stg o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parameter pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w 1.15 0.7 -55 to 150 typ max typ max t <= 10 sec 93 110 93 110 steady state 130 150 130 150 maximum junction-to-ambient a o c/w unit p-channel n-channel r thja thermal resistance ratings parameter symbol s 2 d 2 g 2 p-channel mosfet d 1 s 1 g 1 n-channel mosfet tsop-6 top view d1 s1 d2 g1 s2 g2 1 2 3 6 5 4 freescale www.freescale.net.cn ao6 6 02 / mc6 6 02
2 notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. c h mi n t y pmax vgs = vds, id = 250 ua n 1 1.6 2.5 vgs = vds, id = -250 ua p -1 -1.6 -2.5 vds = 0 v, vgs = 20 v n 4.5na 100 v ds = 0 v, v gs = -20 v p -4.5na -100 vds = 24 v, vgs = 0 v n 12na 1 vds = -24 v, vgs = 0 v p -12na -1 v ds = 24 v, v gs = 0 v, t j = 55 o c n10 v ds = -24 v, v gs = 0 v, t j = 55 o c p-10 v ds = 5 v, v gs = 10 v n5 v ds = -5 v, v gs = -10 v p-5 vgs = 10 v, id = 3.7 a n 0.057 0.063 vgs = -10 v, id = 3.1 a p 0.100 0.112 vgs = 4.5 v, id = 2.7 a n 0.075 0.090 vgs = -4.5 v, id = -2.2 a p 0.148 0.172 v ds = 5 v, i d = 3.7 a n10 v ds = -5 v, i d = 3.1 a p5 i s = 1.05 a, v gs = 0 v n0.80 i s = -1.05 a, v gs = 0 v p -0.83 n2.25 p3.88 n0.51 p0.62 n0.82 p1.53 n 184 400 p 378 800 n62200 p 126 300 n30200 p52300 n510 p510 n1230 p1530 n1330 p2040 n720 p2040 pf forward tranconductance a g fs s gate-source charge q gs input capacitance c iss output capacitance ? a drain-source on-resistance a r ds(on) ns n-chaneel v dd =15v, vgs=4.5v, id=1a , r gen =15 ? , p-channel vdd=-15v, vgs=-4.5v, id=-1a rgen=15 ? fall-time t f turn-off delay time t d(on) t r t d(off) turn-on delay time rise time c oss reverse transfer capacitance c rss limits zero gate voltage drain current i dss n-channel v ds = 15 v, v gs = 0 v, f = 1mhz p-channel vds=-15v, vgs=0v, f=1mhz unit on-state drain current a i d(on) i gss ua ua specifications (t a = 25 o c unless otherwise noted) ua static test conditions v symbol parameter gate-body leakage current gate-threshold voltage v gs(th) s nc gate-drain charge q gd dynamic b n-channel v ds =15v, v gs =4.5v, i d =2.7a p-channel vds=-15v, vgs=-4.5v, id=-3.1a diode forward voltage a v sd total gate charge q g freescale www.freescale.net.cn ao6 6 02 / mc6 6 02 freescale reserves the right to make changes without further notic e to any products herein. freescale makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor doesfreescale assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided infreescale data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. freescale does not convey any license under its patent rights nor the rights of others. freescaleproducts are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the freescale product could create a situation where personal inju ry or death may occur. should buyer purchase or use freescale products for any such uninte nded or unauthorized application, buyer shall indemnify and hold freescale and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that freescale was negligent regarding the design or m anufacture of the part. freescale is an equal opportunity/affirmative action employer.
3 typical electrical characteristics (n-channel) output characteristics transfer characteristics on-resistance vs. junction temperature gate charge capacitance on-resistance vs. drain current 0 6 12 18 24 30 012345 v ds - drain-to-source voltage (v) i d - drain current (a ) 4.0v 3.0v 4.5v v gs = 10v 0 3 6 9 12 15 12345 v gs - gate-to-source voltage (v) i d -drain current (a ) t a = -55 o c 25 o c 125 o c 0 1 2 3 4 0 6 12 18 24 30 i d - drain current (a) r ds(on) - normalized on-resistance 10v 4.5v 0 2 4 6 8 10 012345 q g - total gate charge (nc) v gs - gate-to-source voltage ( v ) 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) - on-resistance (normalized) v gs = 10v 0 100 200 300 400 0 6 12 18 24 30 vds - drain-to-source voltage (v) c - capacitance (pf) c iss c oss c rss freescale www.freescale.net.cn ao6 6 02 / mc6 6 02
4 typical electrical characteristics (n-channel) normalized thermal transient im pedance, junction-to-ambient single pulse power threshold voltage source-drain diode forward voltage on -resistance vs.gate-to source voltage 0.001 0.01 0.1 1 10 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd - source-to-drain voltage (v) i s - source current ( a t a = 125 o c 25 o c 0 0.05 0.1 0.15 0.2 246810 v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohm) 0.5 0.7 0.9 1.1 1.3 1.5 -50 -25 0 25 50 75 100 125 150 t j - temperature ( o c) v gs(th) variance(v) i d = 250 a 0 10 20 30 0.01 0.1 1 10 100 time (sec) power (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave puls e duration (s e c) normalized effective transient thermal impedance r ja (t) = r(t) * r ja r ja = 125 c/w t j - t a = p * r ja (t) duty cy c le, d = t 1 /t p( p k t 1 t 2 single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5 freescale www.freescale.net.cn ao6 6 02 / mc6 6 02
5 typical electrical characteristics (p-channel) output characteristics transfer characteristics on-resistance vs. junction temperature gate charge capacitance on-resistance vs. drain current 0 1 2 3 4 5 00.511.522.5 v ds - drain-to-source voltage (v) i d - drain current (a) v gs =-10v -4.5v -3.0v 0 1 2 3 4 5 1.5 2 2.5 3 3.5 4 v gs - gate-to-source voltage (v) i d - drain current (a) t a = -55 o c 25 o c 125 o c 0.5 1.0 1.5 2.0 2.5 012345 i d - drain current (a) r ds(on) , normalized on-resistance -10v -4.5v -10 -8 -6 -4 -2 0 024681012 q g - total gate charge (nc) v gs - gate-to-source voltage ( v 0.6 0.8 1 1.2 1.4 1.6 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) - on-resistance (normalized) v gs = -10v 0 200 400 600 800 0 6 12 18 24 30 vds - drain-to-source voltage (v) c - capacitance (pf) c rss c os s c iss freescale www.freescale.net.cn ao6 6 02 / mc6 6 02
6 typical electrical characteristics (p-channel) normalized thermal transient im pedance, junction-to-ambient single pulse power threshold voltage source-drain diode forward voltage on -resistance vs.gate-to source voltage 0 10 20 30 0.01 0.1 1 10 100 time (sec) power (w) 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 square wave puls e duration (s e c) normalized effective transient thermal impedance r ja (t) = r(t) * r ja r ja = 125 c/w t j - t a = p * r ja (t) duty cy c le, d = t 1 /t p( p k t 1 t 2 single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5 0.0001 0.001 0.01 0.1 1 10 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v sd , - source-to-drain voltage (v) i s - source current (a) t a = 125 o c 25 o c 0 0.1 0.2 0.3 0.4 246810 v gs - gate-to-source voltage (v) r ds(on) - on-resistance (ohm) 1.2 1.4 1.6 1.8 2 2.2 -50 -25 0 25 50 75 100 125 150 t j - temperature ( o c) v gs(th) variance (v) i d = -250 a freescale www.freescale.net.cn ao6 6 02 / mc6 6 02
7 package information tsop-6: 6lead freescale www.freescale.net.cn ao6 6 02 / mc6 6 02
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