1 AM4542C analog power preliminary publication order number: ds-am4542_d these miniature surface mount mosfets utilize a high cell density trench process to provide low r ds(on) and to ensure minimal power loss and heat dissipation. typical a pplications are dc-dc converters and power management in portable and battery-powered products such as computers, printers, pcmcia cards, cellular and cordless telephones. v ds (v) r ds(on) m( ? )i d (a) 27 @ v gs = 4.5v 7.3 22 @ v gs = 10v 8.3 40 @ v gs = -4.5v -6.2 30 @ v gs = -10v -7.6 40 product summary -40 p & n-channel 40-v (d-s) mosfet ?low r ds(on) provides higher efficiency and extends battery life ? low thermal impedance copper leadframe soic-8 saves board space ? fast switching speed ? high performance trench technology notes a. surface mounted on 1? x 1? fr4 board. b. pulse width limited by maximum junction temperature 1 2 3 4 7 8 5 6 symbol n-channe l p-channe l units v ds 40 -40 v gs 20 -20 t a =25 o c 8.3 -7.6 t a =70 o c6.8-6.3 i dm 50 50 i s 2.3 -2.1 a t a =25 o c 2.1 2.1 t a =70 o c1.31.3 t j , t stg o c continuous source current (diode conduction) a absolute maximum ratings (t a = 25 o c unless otherwise noted) parame te r pulsed drain current b v gate-source voltage drain-source voltage continuous drain current a i d a power dissipation a p d operating junction and storage temperature range w -55 to 150 symbol maximum units t <= 10 sec 62.5 o c/w steady-state 110 o c/w thermal resistance ratings parameter maximum junction-to-ambient a r ja
2 AM4542C analog power preliminary publication order number: ds-am4542_d notes a. pulse test: pw <= 3 00us duty cycle <= 2%. b. guaranteed by design, not subject to production testing. analog power (apl) reserves the right to make changes without further notic e to any products herein. apl makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does apl assume any liability arising ou t of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, conseque ntial or incidental damages. ?typical? parameters which may be provided in apl data sheet s and/or specifications can a nd do vary in different appli cations and actual performance may vary over time. all operating parameters , including ?typicals? must be validated for each customer appl ication by customer?s technical experts. apl does not convey any license under its patent rights nor the rights of others. apl products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications int ended to support or sustain life, or for any other application in which the failure of the apl product could create a situation where personal inju ry or death may occur. should buyer purchase or use apl products for any such uninte nded or unauthorized application, buyer shall indemnify and hold a pl and its officers, employees, subsidiari es, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirect ly, any claim of personal injury or death associated with such unintended or unauthori zed use, even if such claim alleges that apl was negligent regarding the design or m anufacture of the part. apl is an equal opportunity/affirmative action employer. ch m in typ max v gs = v ds , i d = 250 ua n1 1.5 3 v gs = v ds , i d = -250 ua p-1 -1.4 -3 v gs = -20 v, v ds = 0 v p7100 v gs = 20 v, v ds = 0 v n6100 v ds = -32 v, v gs = 0 v p12n a -1 v ds = 32 v, v gs = 0 v n2na1 v ds = 5 v, v gs = 10 v n25 v ds = -5 v, v gs = -10 v p-50 v gs = 10 v, i d = 8.3 a 14 22 v gs = 4.5 v, i d = 7.3 a 17 27 v gs = -10 v, i d = -7.6 a 28 30 v gs = -4.5 v, i d = -6.2 a 35 40 v ds = 15 v, i d = 8.3 a n 40 v ds = -15 v, i d = -7.6 a p31 n1330 p1430 n3.37 p5.812 n4.510 p1230 n 1317 3000 p 1583 4000 n 272 600 p 278 600 n 169 400 p 183 400 n 20 40 p 15 30 n 920 p 16 40 n70200 p62200 n2040 p46100 dynamic turn-on delay time rise time ns n-chaneel v dd =15v, v gs =10v, i d =1a , r gen =25 ? , p-channel v dd =-15v, v gs =-10v, i d =-1a r gen =15 ? fall-time t f turn-off delay time t d(on) t r t d(off) m ? input capacitance c iss output capacitance c oss n-channel v ds =15v, v gs =0v, f=1mhz p-channel v ds =-15v, v gs =0v, f=1mhz drain-source on-resistance a r ds(on) n p on-state drain current a i d(on) v gs(th) a gate-body leakage i gss ua i dss zero gate voltage drain current limits unit specifications (t a = 25 o c unless otherwise noted) na static test conditions v symbol parameter gate-threshold voltage forward tranconductance a g fs s pf reverse transfer capacitance c rss total gate charge q g n-channel v ds =15v, v gs =4.5v, i d =8.3a p-channel v ds =-15v, v gs =-4.5v, i d =-7.6a nc gate-source charge q gs gate-drain charge q gd
3 AM4542C analog power preliminary publication order number: ds-am4542_d typical electrical characteristics (n-channel) transfer characteristics on-resistance vs. junction temperature gate charge capacitance on resistance vs. drain current 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) - on-resistance (ohm) (normalized) v gs = 10v output characteristics 0 10 20 30 40 50 60 0 0.5 1 1.5 2 2.5 3 3.5 4 v ds (v) i ds drain current (a) 3v 3.5v 4.5v throu g h 10v 0 10 20 30 40 50 60 70 80 0 123456 v gs gate to source voltage (v) i d drain current (a) 0 0.005 0.01 0.015 0.02 0.025 0.03 0.035 0.04 0 102030405060 i d drain current (a) r ds (on) resistance ( ? ) 4.5v 10v 6 v 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 0 5 10 15 2 0 v ds (v) capacitance (pf ) ciss coss crs 0 2 4 6 8 10 0 5 10 15 20 25 30 q g , total gate charge (nc) v gs (v) v d = 15v i d = 10a
4 AM4542C analog power preliminary publication order number: ds-am4542_d 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 t1, time (sec) p(pk), peak transient power (w) single pulse rqja = 125oc/w ta = 25oc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1, tim e (s e c ) single p ulse 0.01 0.02 0.0 0.1 0.2 d = 0.5 rqj a (t) = r(t) + rqja rqja = 125 o c/w t j - t a = p * r q j a(t) duty cycle, d = t1 / t2 p(pk) t1 t2 typical electrical characteristics (n-channel) figure 11. transient thermal response curve figure 10. single pulse maximum power dissipation threshold voltage source-drain diode forward voltage on-r esistance vs. gate-to-source voltage normalized thermal transien t junction to ambient 0.0001 0.001 0.01 0.1 1 10 100 00.20.40.60.811.2 v sd - source-to-drain voltage (v) i s - source current (a) t a = 125 o c 25 o c 2.7 2.9 3.1 3.3 3.5 3.7 3.9 4.1 4.3 4.5 4.7 -50 -25 0 25 50 75 100 125 150 t j - temperature ( o c) v gs(th) variance (v) i d = 250 a 0.01 0.011 0.012 0.013 0.014 0.015 0.016 0.017 0.018 0.019 0.02 0246810 v gs gate to source voltage(v) r ds (on) resistance ( ? ) id=10a
5 AM4542C analog power preliminary publication order number: ds-am4542_d typical electrical characteristics (p-channel) transfer characteristics on resistance vs vgs voltage capacitance gate charge on-resistance vs. junction temperature 0.6 0.7 0.8 0.9 1 1.1 1.2 1.3 1.4 1.5 1.6 -50 -25 0 25 50 75 100 125 150 t j - junction temperature ( o c) r ds(on) - on-resistance (ohm) (normalized) v gs = - 10v output characteristics 0 10 20 30 40 50 60 00.5 11.522.533.54 v ds (v) i ds drain current (a) 3v 6v through 10v 3.5v 4v 4 .5v 0 10 20 30 40 50 60 0 123456 v gs gate to source voltage (v) i d drain current (a) 25 c 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0 102030405060 i d drain current (a) r ds (on) resistance ( ? ) 4.5v 10v 6v 0 200 400 600 800 1000 1200 1400 1600 1800 2000 2200 2400 0 5 10 15 2 0 v ds (v) capacitance (pf ) ciss coss crs 0 2 4 6 8 10 0 5 10 15 20 25 30 qg, total gate charge (nc) v gs (v) v d = 10v i d = 10a
6 AM4542C analog power preliminary publication order number: ds-am4542_d 0 10 20 30 40 50 0.001 0.01 0.1 1 10 100 1000 t1, time (sec) p(pk), peak transient power (w ) single pulse rqja = 125c/w ta = 25c 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t1 , tim e (s ec) rqja(t) = r(t) + rqja rqja = 125 o c/w tj - ta = p * rq ja(t) duty cycle, d = t1 / t2 p (p k ) t1 t2 single puls e 0.01 0.02 0.05 0.1 0.2 d = 0.5 typical electrical characteristics (p-channel) source-drain diode forward voltage on-res istance with gate to source voltage threshold voltage figure 10. single pulse maximum power dissipation normalized thermal transien t junction to ambient figure 11. transient thermal response curve 0.0001 0.001 0.01 0.1 1 10 100 0 0.2 0.4 0.6 0.8 1 1.2 v sd - source-to-drain voltage (v) i s - source current (a) t a = 125 o c 25 o c 1 1.1 1.2 1.3 1.4 1.5 1.6 1.7 1.8 1.9 2 -50 -25 0 25 50 75 100 125 150 t j - temperature ( o c) v gs(th) variance (v) i d = -250 a 0 0.01 0.02 0.03 0.04 0.05 0.06 0.07 0.08 0.09 0.1 0246810 v gs gate to source voltage(v) r ds (on) resistance ( ? ) id=10a
7 AM4542C analog power preliminary publication order number: ds-am4542_d package information so-8: 8lead h x 45
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