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sot223 pnp silicon planar medium power high performance transistor issue 2 - october 1995 partmarking details - FZT589 complementary types - fzt489 absolute maximum ratings. parameter symbol value unit collector-base voltage v cbo -50 v collector-emitter voltage v ceo -30 v emitter-base voltage v ebo -5 v peak pulse current i cm -2 a continuous collector current i c -1 a base current i b -200 ma power dissipation at t amb =25c p tot 2w operating and storage temperature range t j :t stg -55 to +150 c electrical characteristics (at t amb = 25c unless otherwise stated) parameter symbol min. max. unit conditions. collector-base breakdown voltage v (br)cbo -50 v i c =-100 m a collector-emitter breakdown voltage v (br)ceo -30 v i c =-1m a* emitter-base breakdown voltage v (br)ebo -5 v i e =-100 m a collector cut-off current i cbo -100 na v cb =-30v collector emitter cut-off current i ces -100 na v ces =-30v emitter cut-off current i ebo -100 na v eb =-4v collector-emitter saturation voltage v ce(sat) -0.35 -0.65 vi c =-1a, i b =-100ma* i c =-2a, i b =-200ma* base-emitter saturation voltage v be(sat) -1.2 v i c =-1a, i b =-100ma* base-emitter turn-on voltage v be(on) -1.1 v i c =-1a, v ce =-2v* static forward current transfer ratio h fe 100 100 80 40 300 i c =-1ma, v ce =-2v* i c =-500ma, v ce =-2v* i c =-1a, v ce =-2v* i c =-2a, v ce =-2v* transition frequency f t 100 mhz i c =-100ma, v ce =-5v f=100mhz output capacitance c obo 15 pf v cb =-10v, f=1mhz *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% for typical characteristics graphs see fmmt549 datasheet FZT589 c c e b 3 - 194

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Price & Availability of FZT589

Part #	Manufacturer	Description	Price	BuyNow Qty.
FZT589TA FZT589TA	Diodes Incorporated	Trans GP BJT PNP 30V 1A 4-Pin(3+Tab) SOT-223 T/R - Tape and Reel (Alt: FZT589TA)	100000: USD0.2108 10000: USD0.2142 8000: USD0.2176 6000: USD0.2261 4000: USD0.2329 2000: USD0.24013 1000: USD0.24905	0

Part #	Manufacturer	Description	Price	BuyNow Qty.
FZT589TA 522-FZT589TA	Diodes Incorporated	Bipolar Transistors - BJT PNP Medium Power	1: USD0.64 10: USD0.567 100: USD0.387 500: USD0.323 1000: USD0.281 2000: USD0.243 5000: USD0.228 10000: USD0.214 25000: USD0.212	1009

Part #	Manufacturer	Description	Price	BuyNow Qty.
FZT589TA 82098201	Zetex / Diodes Inc	Trans GP BJT PNP 30V 1A 2000mW 4-Pin(3+Tab) SOT-223 T/R	1000: USD0.2125	26000

Part #	Manufacturer	Description	Price	BuyNow Qty.
FZT589TA	Zetex / Diodes Inc			2000
FZT589TA	Diodes Incorporated			1851

Part #	Manufacturer	Description	Price	BuyNow Qty.
FZT589TA	Zetex / Diodes Inc	Bipolar Junction Transistor, PNP Type, SOT-223	908: USD0.1969 191: USD0.2205 1: USD0.4725	1000
FZT589TA	Zetex / Diodes Inc	Bipolar Junction Transistor, PNP Type, SOT-223	509: USD0.315 128: USD0.3938 1: USD0.7875	1600
FZT589TA	Diodes Incorporated	Bipolar Junction Transistor, PNP Type, SOT-223	509: USD0.315 128: USD0.3938 1: USD0.7875	1480

Part #	Manufacturer	Description	Price	BuyNow Qty.
FZT589TA	Diodes Incorporated	SOT223 PNP SILICON PLANAR MEDIUM POWER HIGH PERFORMANCE TRANSISTOR Power Bipolar Transistor, 1A I(C), 30V V(BR)CEO, 1-Element, PNP, Silicon, Plastic/Epoxy, 4 Pin		6000

Part #	Manufacturer	Description	Price	BuyNow Qty.
FZT589TA FZT589TA	Diodes Incorporated	Trans GP BJT PNP 30V 1A 4-Pin(3+Tab) SOT-223 T/R (Alt: FZT589TA)		1000

Part #	Manufacturer	Description	Price	BuyNow Qty.
FZT589TA	Diodes Incorporated	TRANS PNP 30V 1A SOT223-3	1000: USD0.36743	850

Part #	Manufacturer	Description	Price	BuyNow Qty.
FZT589TA	Diodes Incorporated		1000: USD0.3509	1000

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