advanced power p-channel enhancement mode electronics corp. power mosfet low on-resistance bv dss -12v small & thin package r ds(on) 25m capable of 1.8v gate drive i d -7a rohs compliant & halogen-free description absolute maximum ratings symbol units v ds v v gs v i d @t a =25 a i d @t a =70 a i dm a p d @t a =25 w w/ t stg t j symbol value unit rthj-a maximum thermal resistance, junction-ambient 3 125 /w rthj-l maximum thermal resistance, junction-lead 75 /w data and specifications subject to change without notice storage temperature range -55 to 150 total power dissipation 1 linear derating factor continuous drain current 3 -5.0 pulsed drain current 1 -30 gate-source voltage + 8 continuous drain current 3 -7.0 parameter rating drain-source voltage - 12 AP9923GEO-HF -55 to 150 halogen-free product 0.01 201009294 operating junction temperature range thermal data parameter 1 advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, ultra low on-resistance and cost-effectiveness. s1 g1 d1 s2 g2 d2 d2 s2 s2 g2 d1 s1 s1 g1 tssop-8
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =-250ua -12 - - v v gs =-4.5v, i d =-7a - - 25 m ? v gs =-2.5v, i d =-6a - - 32 m ? v gs =-1.8v, i d =-5a - - 48 m ? v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.3 - -1 v g fs forward transconductance v ds =-5v, i d =-7a - 7 - s i dss drain-source leakage current v ds =-12v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-9.6v ,v gs =0v - - -10 ua i gss gate-source leakage v gs =+ 8v, v ds =0v - - + 30 ua q g total gate charge 2 i d = -7a - 28 45 nc q gs gate-source charge v ds = -6v - 3 - nc q gd gate-drain ("miller") charge v gs = -4.5v - 8 - nc t d(on) turn-on delay time 2 v ds = -6v - 12 - ns t r rise time i d = -5a - 55 - ns t d(off) turn-off delay time r g = 3.3 ? ,v gs = -5v - 75 - ns t f fall time r d = 1.2 ? - 100 - ns c iss input capacitance v gs =0v - 2250 3600 pf c oss output capacitance v ds =-6v - 635 - pf c rss reverse transfer capacitance f=1.0mhz - 565 - pf r g gate resistance f=1.0mhz - 5 7.5 ? source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 t j =25 , i s =-0.84a, v gs =0v - - -1.2 v t rr reverse recovery time 2 i s = -7a, v gs =0 v , - 61 - ns q rr reverse recovery charge di/dt=100a/s - 56 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse test 3.surface mounted on 1 in 2 copper pad of fr4 board ; 208 /w when mounted on min. copper pad. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. AP9923GEO-HF r ds(on) static drain-source on-resistance 2 2
AP9923GEO-HF fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 10 20 30 40 02468 -v gs (v) r ds(on) (m ) i d = -6.0a t a =25 o c 0 5 10 15 20 25 30 0123 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c -5.0v -4.5v -3.5v -2.5v v g = -1.8v 0 5 10 15 20 25 30 01234 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c -5.0v -4.5v -3.5v -2.5v v g = -1.8 v 0.4 0.7 1.0 1.3 1.6 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d = -7.0a v g = -4.5v 0 2 4 6 8 10 0 0.2 0.4 0.6 0.8 1 1.2 -v sd (v) -i s (a) t j =25 o c t j =150 o c 0 0.2 0.4 0.6 0.8 -50 0 50 100 150 t j , junction temperature ( o c) -v gs(th) (v)
AP9923GEO-HF fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. transfer characteristics fig 12. gate charge waveform 4 0.01 0.1 1 10 100 0.01 0.1 1 10 100 -v ds (v) -i d (a) t a =25 o c single pulse 100us 1ms 10ms 100ms 1s dc 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + ta r thja =208 o c/w t t 0.01 0.05 0.1 0.2 duty factor=0.5 s in g le pulse 0.02 0 2 4 6 8 0 1020304050 q g , total gate charge (nc) -v gs , gate to source voltage (v) v ds = -6v i d = -7a 100 1000 10000 135791113 -v ds (v) c (pf) f =1.0mh z c iss c oss c rss q v g q gs q gd q g charge -4.5v 0 5 10 15 20 25 30 01234 -v gs , gate-to-source voltage (v) -i d , drain current (a) t j =150 o c t j =25 o c v ds = -5v operation in this area limited by r ds(on)
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