advanced power n-channel insulated gate electronics corp. bipolar transistor features v ces advanced igbt technology i c low saturation voltage v ce(sat) =3.15v@i c =40a industry standard to-3p package absolute maximum ratin g s , 1/8" from case for 10 seconds . notes: 1.pulse width limited by max. junction temperature . thermal data symbol rthj-c rthj-a electrical characteristics@t j =25 o c(unless otherwise specified) symbol min. typ. max. units i ges --+ 100 na i ces - - 500 ua v ce(sat) - 3.15 3.4 v - 3.2 3.71 v v ge(th) 3-7v q g - 160 260 nc q ge -25- nc q gc -90- nc t d(on) -35- ns t r -30- ns t d(off) - 150 - ns t f - 260 520 ns e on - 1.7 - mj e off -3- mj c ies - 3030 4800 pf c oes - 205 - pf c res -15- pf data and specifications subject to change without notice rohs-compliant product 201104072 v cc =600v, i c =40a, v ge =15v, r g =5 ? , inductive load rise time turn-off delay time fall time turn-on switching loss turn-off switching loss thermal resistance junction-ambient i cm 1 operating junction temperature range gate-emitter charge gate threshold voltage collector-emitter saturation voltage collector-emitter leakage current v ge =15v, i c =50a t l v ce =1200v, v ge =0v v ge =15v parameter w v cc =500v maximum power dissipation test conditions storage temperature range 208 p d @t c =25 f=1.0mhz -55 to 150 -55 to 150 v ge =15v, i c =40a v ce =v ge , i c =250ua i c =40a v ge =+ 20v, v ce =0v v ce =30v v ge =0v pulsed collector current 1 v ge i c @t c =100 i c @t c =25 continuous collector current gate-emitter voltage continuous collector current input capacitance a v 160 a + 20 40 80 a AP40G120W symbol v ces 1200v 40a rating collector-emitter voltage units v 1200 /w /w thermal resistance junction-case parameter value 0.6 40 units reverse transfer capacitance t stg gate-collector charge total gate charge parameter gate-to-emitter leakage current turn-on delay time output capacitance t j maximum lead temp. for soldering purposes 300 g c e g c e to-3p c
fig 1. typical output characteristics fig 2. typical output characteristics fig 3. typical saturation voltage fig 4. typical collector- emitter voltage characteristics v.s. junction temperature fig 5. gate threshold voltage fig 6. typical capacitance characterisitics v.s. junction temperature 2 AP40G120W 0 40 80 120 160 036912 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v 1 2 3 4 5 6 0 40 80 120 160 junction temperature ( o c) v ce(sat) , saturation voltage(v) i c =80a i c =40a v ge =15v 0.5 0.8 1.1 1.4 -50 0 50 100 150 junction temperature ( o c ) normalized v ge(th) (v) t c =150 o c 0 20 40 60 80 100 120 140 160 02468 v ce , collector-emitter voltage (v) i c , collector current(a) v ge =15v t c =25 1 100 10000 1 10 100 v ce , collector-emitter voltage (v) capacitance (pf) f =1.0mh z c ies c oes c res t c =150 0 50 100 150 200 250 300 036912 v ce , collector-emitter voltage (v) i c , collector current (a) 20v 18v 15v 12v v ge =10v t c =25 o c
fig 7. rever bias soa fig 8. effective transient thermal impedance fig 9. saturation voltage vs. v ge fig 10. saturation voltage vs. v ge fig11. power dissipation vs. junction fig 12. gate charge characterisitics temperature 3 AP40G120W 0 4 8 12 16 0 40 80 120 160 q g , gate charge (nc) v ge , gate -emitter voltage (v) i c =40a v cc =300v v cc =400v v cc =500v 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =80a 40 a 20 a t c =25 o c 0 5 10 15 20 0 4 8 12 16 20 v ge , gate-emitter voltage(v) v ce , collector-emitter voltage(v) i c =80a 4 0 a 20 a t c =150 o c 1 10 100 1000 10 100 1000 10000 v ce , collector-emitter voltage(v) i c , peak collector current(a) v ge =15v t j =150 o c 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0 50 100 150 200 250 0 50 100 150 200 junction temperature ( ) power dissipation (w)
|
