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  BSS126 sipmos ? small-signal-transistor features ? n-channel ? depletion mode ? d v /d t rated ? available with v gs(th) indicator on reel ? pb-free lead plating; rohs compliant maximum ratings, at t j =25 c, unless otherwise specified parameter symbol conditions unit continuous drain current i d t a =25 c 0.021 a t a =70 c 0.017 pulsed drain current i d,pulse t a =25 c 0.085 reverse diode d v /d t d v /d t i d =0.016 a, v ds =20 v, d i /d t =200 a/s, t j,max =150 c 6 kv/s gate source voltage v gs 20 v esd class (jesd22-a114-hbm) 0 (<250v) power dissipation p tot t a =25 c 0.50 w operating and storage temperature t j , t stg -55 ... 150 c iec climatic category; din iec 68-1 55/150/56 1) see table on next page and diagram 11 value v ds 600 v r ds(on),max 700 ? i dss,min 0.007 a product summary pg-sot-23 type package pb-free tape and reel information marking BSS126 pg-sot-23 yes l6327: 3000 pcs/reel shs BSS126 pg-sot-23 yes l6906: 3000 pcs/reel sorted in v gs ( th ) bands 1) shs rev. 1.6 page 1 2009-08-18
BSS126 parameter symbol conditions unit min. typ. max. thermal characteristics thermal resistance, junction - ambient r thja minimal footprint - - 250 k/w electrical characteristics, at t j =25 c, unless otherwise specified static characteristics drain-source breakdown voltage v (br)dss v gs =-5 v, i d =250 a 600 - - v gate threshold voltage v gs(th) v ds =3 v, i d =8 a -2.7 -2.0 -1.6 drain-source cutoff current i d(off) v ds =600 v, v gs =-5 v, t j =25 c - - 0.1 a v ds =600 v, v gs =-5 v, t j =125 c --10 gate-source leakage current i gss v gs =20 v, v ds =0 v - - 100 na on-state drain current i dss v gs =0 v, v ds =25 v 7- -ma drain-source on-state resistance r ds(on) v gs =0 v, i d =3 ma - 320 700 : v gs =10 v, i d =16 ma - 280 500 transconductance g fs | v ds |>2| i d | r ds(on)max , i d =0.01 a 0.008 0.017 - s threshold voltage v gs(th) sorted in bands 2) j v gs(th) v ds =3 v, i d =8 a -1.8 - -1.6 v k -1.95 - -1.75 l -2.1 - -1.9 m -2.25 - -2.05 n -2.4 - -2.2 2) each reel contains transistors out of one band whose identifying letter is printed on the reel label. a specific band cannot be ordered separately. values rev. 1.6 page 2 2009 -08-18
BSS126 parameter symbol conditions unit min. typ. max. dynamic characteristics i d =f( v gs ); v ds =3 v; t j =25 c c iss -2128pf output capacitance c oss - 2.4 3.2 reverse transfer capacitance c rss - 1.0 1.5 turn-on delay time t d(on) - 6.1 9.2 ns rise time t r - 9.7 14.5 turn-off delay time t d(off) -1421 fall time t f - 115 170 gate charge characteristics gate to source charge q gs - 0.05 0.08 nc gate to drain charge q gd - 1.2 1.8 gate charge total q g - 1.4 2.1 gate plateau voltage v plateau - 0.10 - v reverse diode diode continous forward current i s - - 0.016 a diode pulse current i s,pulse - - 0.064 diode forward voltage v sd v gs =-5 v, i f =16 ma, t j =25 c - 0.81 1.2 v reverse recovery time t rr - 160 240 ns reverse recovery charge q rr - 13.2 19.8 nc v r =300 v, i f =0.01 a, d i f /d t =100 a/s t a =25 c values v gs =-5 v, v ds =25 v, f =1 mhz v dd =300 v, v gs =-3?7 v, i d =0.01 a, r g =6 : v dd =400 v, i d =10 ma, v gs =-3 to 5 v rev. 1.6 page 3 2009-08-18
BSS126 1 power dissipation 2 drain current p tot =f( t a ) i d =f( t a ); v gs
BSS126 5 typ. output characteristics 6 typ. drain-source on resistance i d =f( v ds ); t j =25 c r ds(on) =f( i d ); t j =25 c parameter: v gs parameter: v gs 7 typ. transfer characteristics 8 typ. forward transconductance i d =f( v gs ); v ds =3 v; t j =25 c g fs =f( i d ); t j =25 c -0.2 v -0.1 v 0 v 0.1 v 0.2 v 0.5 v 1 v 10 v 0 100 200 300 400 500 600 700 800 900 1000 0 0.01 0.02 0.03 0.04 i d [a] r ds(on) [ ?
BSS126 9 drain-source on-state resistance 10 typ. gate threshold voltage r ds(on) =f( t j ); i d = 0.016ma; v gs =0 v v gs(th) =f( t j ); v ds =3 v; i d = 8 a parameter: i d 11 threshold voltage bands 12 typ. capacitances i d =f( v gs ); v ds =3 v; t j =25 c c =f( v ds ); v gs =-3 v; f =1 mhz 8 a j k l m n 0.001 0.01 0.1 -2.5 -2 -1.5 -1 v gs [v] i d [ma] typ %98 0 200 400 600 800 1000 1200 1400 1600 -60 -20 20 60 100 140 180 t j [c] r ds(on) [ ?
BSS126 13 forward characteristics of reverse diode 15 typ. gate charge i f =f( v sd ) v gs =f( q gate ); i d =0.1 a pulsed parameter: t j parameter: v dd 16 drain-source breakdown voltage i d =f( v gs ); v ds =3 v; t j =25 c 500 540 580 620 660 700 -60 -20 20 60 100 140 180 t j [c] v br(dss) [v] 0.2 vds(max) 0.5 vds(max) 0.8 vds(max) -4 -3 -2 -1 0 1 2 3 4 5 6 0 0.4 0.8 1.2 1.6 q gate [nc] v gs [v] 25 c 150 c 25 c, 98% 150 c, 98% 0.001 0.01 0.1 0 0.5 1 1.5 2 2.5 v sd [v] i f [a] rev. 1.6 page 7 2009-08-18
BSS126 package outline: footprint: packaging: dimensions in mm rev. 1.6 page 8 2009-08-18
BSS126 published by infineon technologies ag bereich kommunikation st.-martin-stra?e 53 d-81451 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices, please contact your nearest infineon technologies office in germany or our infineon technologies representatives worldwide (see address list). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact your nearest infineon technologies office. infineon technologies' components may only be used in life-support devices or systems with the expressed written approval of infineon technologies if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. rev. 1.6 page 9 2009-08-18


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Price & Availability of BSS126
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Part # Manufacturer Description Price BuyNow  Qty.
BSS126H6906XTSA1
 Infineon Technologies AG 3000: USD0.3113
33000: USD0.2881
 BuyNow
33000
BSS126H6327XTSA2
 Infineon Technologies AG 3000: USD0.1262
 BuyNow
90000

Ozdisan Elektronik

Part # Manufacturer Description Price BuyNow  Qty.
BSS126_R2_00001
 PanJit Group MOSFET DIS.30mA 600V N-CH SOT23 SMT 12000: USD0.089
5: USD0.10858
 RFQ
0
BSS126_R1_00001
 PanJit Group MOSFET DIS.30mA 600V N-CH SOT23 SMT 3000: USD0.089
5: USD0.10858
 RFQ
0

Win Source Electronics

Part # Manufacturer Description Price BuyNow  Qty.
BSS126H6327XTSA2
 Infineon Technologies AG MOSFET N-CH 600V 0.021A SOT-23 100: USD0.509
240: USD0.418
375: USD0.405
515: USD0.392
660: USD0.379
885: USD0.34
 BuyNow
135000

Wuhan P&S

Part # Manufacturer Description Price BuyNow  Qty.
BSS126H6327
 Infineon Technologies AG 600V,0.007A,N channel Power MOSFET 1: USD0.17
100: USD0.14
500: USD0.12
1000: USD0.12
 BuyNow
497

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