advanced power n-channel enhancement mode electronics corp. power mosfet simple drive requirement bv dss 300v lower on-resistance r ds(on) 66m ? high speed switching i d 36a description absolute maximum ratings symbol units v ds v v gs v i d @t c =25 a i dm a i dr a i dr(pulse) a p d @t c =25 w i ar avalanche current 3 a e ar single pulse avalanche energy 3 mj t stg t j symbol value units rthj-c maximum thermal resistance, junction-case 0.6 /w rthj-a maximum thermal resistance, junction-ambient 40 /w data and specifications subject to change without notice 1 parameter drain-source voltage pulsed drain current 1 body-drain diode reverse drain current body-drain diode reverse drain peak current 1 36 144 gate-source voltage + 30 ap80n30w rating 300 144 201009153 rohs-compliant product continuous drain current, v gs @ 10v 36 total power dissipation 208 -55 to 150 operating junction temperature 150 30 45 thermal data parameter storage temperature range g d s g d s to-3p a p80n30 from apec provide the designer with the best combination of fast switching, low on-resistance and cost-effectiveness. the to-3p package is preferred for commercial & industrial applications with higher power level preclusion than to-220 device.
electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 300 - - v r ds(on) static drain-source on-resistance 2 v gs =10v, i d =30a - - 66 m ? v gs(th) gate threshold voltage v ds =v gs , i d =250ua 3 - 4.5 v g fs forward transconductance v ds =10v, i d =30a - 56 - s drain-source leakage current v ds =300v, v gs =0v - - 10 ua drain-source leakage current (t j =125 o c) v ds =240v, v gs =0v - - 200 ua i gss gate-source leakage v gs = + 30v, v ds =0v - - + 0.1 ua q g total gate charge 2 i d =30a - 117 180 nc q gs gate-source charge v ds =240v - 28 - nc q gd gate-drain ("miller") charge v gs =10v - 42 - nc t d(on) turn-on delay time 2 v ds =150v - 40 - ns t r rise time i d =30a - 90 - ns t d(off) turn-off delay time r g =10 ? - 165 - ns t f fall time v gs =10v - 95 - ns c iss input capacitance v gs =0v - 5700 9120 pf c oss output capacitance v ds =30v - 525 - pf c rss reverse transfer capacitance f=1.0mhz - 10 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =30a, v gs =0v - - 1.5 v t rr reverse recovery time 2 i s =12a, v gs =0v - 310 - ns q rr reverse recovery charge di/dt=100a/s - 3.5 - c notes: 1.pulse width limited by max. junction temperature 2.pulse test 3.starting t j =25 o c , v dd =50v , l=1mh , r g =25 ? , i as =30a. this product is sensitive to electrostatic discharge, please handle with caution. use of this product as a critical component in life support or other similar systems is not authorized. apec does not assume any liability arising out of the application or use of any product or circuit described herein; neither does it convey any license under its patent rights, nor the rights of others. apec reserves the right to make changes without further notice to any products herein to improve reliability, function or design. 2 ap80n30w i dss
ap80n30 w fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature 3 50 55 60 65 70 45678910 v gs gate-to-source voltage (v) r ds(on) (m ) t c =25 o c i d =30a 0.3 0.8 1.3 1.8 2.3 2.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =30a v g =10v 0 20 40 60 80 100 120 0.0 4.0 8.0 12.0 16.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =25 o c 10v 9.0v 8.0v 7.0v v g =5.0v 0 10 20 30 40 50 60 0.0 4.0 8.0 12.0 16.0 v ds , drain-to-source voltage (v) i d , drain current (a) t c =150 o c 10v 9.0v 8.0v 7.0v v g =5.0v 0.4 0.6 0.8 1 1.2 1.4 -50 0 50 100 150 t j , junction temperature ( o c ) normalized v gs(th) (v) 0 10 20 30 40 0 0.2 0.4 0.6 0.8 1 1.2 1.4 v sd , source-to-drain voltage (v) i s (a) t j =25 o c t j =150 o c
ap80n30 w fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig 9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 4 0 2 4 6 8 10 12 0 40 80 120 160 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =30a v ds =240v q v g 10v q gs q gd q g charge 0 2000 4000 6000 8000 1 6 11 16 21 26 31 36 v ds ,drain-to-source voltage (v) c (pf) f =1.0mh z c iss c oss c rss 0.001 0.01 0.1 1 0.00001 0.0001 0.001 0.01 0.1 1 10 t , pulse width (s) normalized thermal response (r thjc ) p dm duty factor = t/t peak t j = p dm x r thjc + t c t t 0.02 0.01 0.05 0.1 0.2 duty factor=0.5 single pulse 0.1 1 10 100 1000 0.1 1 10 100 1000 v ds , drain-to-source voltage (v) i d (a) t c =25 o c s in g le puls e 100us 1ms 10ms 100ms dc operation in this area limited by r ds(on) t d(on) t r t d(off) t f v ds v gs 10% 90%
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