mosfets TK5P60W 1. 1. 1. 1. applications applications applications applications ? switching voltage regulators 2. 2. 2. 2. features features features features (1) low drain-source on-resistance: r ds(on) = 0.77 ? (typ.) by used to super junction structure : dtmos (2) easy to control gate switching (3) enhancement mode: v th = 2.7 to 3.7 v (v ds = 10 v, i d = 0.27 ma) 3. 3. 3. 3. packaging and internal circuit packaging and internal circuit packaging and internal circuit packaging and internal circuit dpak 1: gate 2: drain (heatsink) 3: source 4. 4. 4. 4. absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t absolute maximum ratings (note) (t a a a a = 25 = 25 = 25 = 25 unless otherwise specified) unless otherwise specified) unless otherwise specified) unless otherwise specified) characteristics drain-source voltage gate-source voltage drain current (dc) drain current (pulsed) power dissipation single-pulse avalanche energy avalanche current reverse drain current (dc) reverse drain current (pulsed) channel temperature storage temperature (t c = 25 ) (note 1) (note 1) (note 2) (note 1) (note 1) symbol v dss v gss i d i dp p d e as i ar i dr i drp t ch t stg rating 600 30 5.4 21.6 60 71 1.4 5.4 21.6 150 -55 to 150 unit v a w mj a note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. silicon n channel mos type ( -mos ) www.freescale.net.cn www.freescale.net.cn 1/9 7 . 3 : 0 2 6 ) ( 7 v 6 l o l f r q 1 & |