lead-free green ds30624 rev. 6 - 2 1 of 3 DP350T05 www.diodes.com diodes incorporated DP350T05 pnp small signal surface mount transistor characteristic symbol DP350T05 unit collector-base voltage v cbo -350 v collector-emitter voltage v ceo -350 v emitter-base voltage v ebo -5.0 v continuous collector current (note 1) i c -500 ma power dissipation (note 1) p d 300 mw thermal resistance, junction to ambient (note 1) r ja 417 c/w operating and storage and temperature range t j ,t stg -55 to +150 c maximum ratings @ t a = 25 c unless otherwise specified a e j l top view m b c h g d k c b e mechanical data case: sot-23 case material: molded plastic. ul flammability classification rating 94v-0 moisture sensitivity: level 1 per j-std-020c terminal connections: see diagram terminals: finish matte tin finish annealed over alloy 42 leadframe. solderable per mil-std-202, method 208 marking (see page 2): k3u ordering & date code information: see page 2 weight: 0.008 grams (approximate) notes: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad l ayout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead. 3. diodes inc.'s "green" policy can be found on our website at http://www.diodes.com/products/lead_free/index.php. sot-23 dim min max a 0.37 0.51 b 1.20 1.40 c 2.30 2.50 d 0.89 1.03 e 0.45 0.60 g 1.78 2.05 h 2.80 3.00 j 0.013 0.10 k 0.903 1.10 l 0.45 0.61 m 0.085 0.180 0 8 all dimensions in mm e b c features epitaxial planar die construction complementary npn type available (dn350t05) ideal for medium power amplification and switching lead free by design/rohs compliant (note 2) "green device" (note 3) qualified to aec-q101 standards for high reliability new product
ds30624 rev. 6 - 2 2 of 3 DP350T05 www.diodes.com diodes incorporated characteristic symbol min max unit test condition off characteristics (note 4) collector-base breakdown voltage v (br)cbo -350 v i c = -100 a, i e = 0 collector-emitter breakdown voltage v (br)ceo -350 v i c = -1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo -5.0 v i e = -10 a, i c = 0 collector cutoff current i cbo -50 na v cb = -200v, i e = 0 collector cutoff current i ebo -50 na v ce = -3.0v, i c = 0 on characteristics (note 4) dc current gain h fe 20 30 30 20 15 200 200 i c = -1.0ma, v ce = -10v i c = -10ma, v ce = -10v i c = -30ma, v ce = -10v i c = -50ma, v ce = -10v i c = -100ma, v ce = -10v collector-emitter saturation voltage v ce(sat) -0.30 -0.35 -0.50 -1.0 v i c = -10ma, i b = -1.0ma i c = -20ma, i b = -2.0ma i c = -30ma, i b = -3.0ma i c = -50ma, i b = -5.0ma base-emitter saturation voltage v be(sat) -0.75 -0.85 -0.90 v i c = -10ma, i b = -1.0ma i c = -20ma, i b = -2.0ma i c = -30ma, i b = -3.0ma base-emitter on voltage v be(on) -2.0 v i c = -100ma, v ce = -10v small signal characteristics output capacitance c obo 7.0 pf v cb = -20v, f = 1.0mhz, i e = 0 transition frequency f t 50 mhz v ce = -10v, i c = -20ma electrical characteristics @ t a = 25 c unless otherwise specified note: 4. short duration test pulse used to minimize self-heating effect. note: 5. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. device packaging shipping DP350T05-7 sot-23 3000/tape & reel ordering information (note 5) month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd date code key k3u = product type marking code ym = date code marking y = year ex: s = 2005 m = month ex: 9 = september k3u ym marking information year 2005 2006 2007 2008 2009 code st uvw new product
ds30624 rev. 6 - 2 3 of 3 DP350T05 www.diodes.com diodes incorporated 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) fig. 1, max power dissipation vs ambient tem p erature a 150 200 250 300 350 0 new product -1 -10 -100 i , collector current (ma) fig. 2, c dc current gain vs. collector current 0 h , dc current gain fe 50 100 150 200 250 300 t = 150c a t = 125c a t=75c a t = 25c a t = -55c a v ce =-10v -10 -100 i , collector current (ma) fig. 4, base emitter saturation voltage vs collector current c v , base emitter be(sat) saturation voltage (v) -0.1 - 1 0 -20 -30 -40 -50 -60 -70 -80 -90 t = 150c a t = 125c a t = 75c a t = 25c a t = -55c a i c i b =10 -0.01 -100 -90 -80 -70 -60 -50 -10 -20 -30 -40 - 1 -0.1 i , collector current (ma) fig. 3, collector-emitter saturation voltage vs collector current c v , collector emitter saturation voltage (v) ce(sat) 0 t = 150c a t = 125c a t=75c a t = 25c a t = -55c a i c i b =10 0 60 50 40 30 7 0 1 10 20 c, capacitance (pf) v , reverse voltage (v) fi g . 6, capacitance vs. reverse volta g e r 0 2 3 4 5 t=25c a cibo cobo 0 -0.1 -0.2 -0.3 -0.4 -0.5 -0.9 -0.8 -0.7 -0.6 - 1 -1 -10 -100 v , base emitter on voltage (v) be(on) i , collector current (ma) fi g .5, c base-emitter on volta g e vs. collector current t = 150c a t = 125c a t = 75c a t=25c a t = -55c a v ce =-10v
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