vishay tlw.8900 document number 83212 rev. a1, 02-apr-03 vishay semiconductors www.vishay.com 1 16 012 telux? \ description the telux? series is a clear, non diffused led for applications where supreme luminous flux is required. it is designed in an industry standard 7.62 mm square package utilizing highly developed (as) allngap technology. the supreme heat dissipation of telux? allows applications at high ambient temperatures. all packing units are binned for luminous flux, forward voltage and color to achieve the most homogenous light appearance in application. sae and ece color requirements for automobile application are available for color red. esd resistivity 2kv (hbm) according to mil std 883d, method 3015.7. features utilizing one of the world?s brightest (as) allngap technologies high luminous flux supreme heat dissipation: r thjp is 90 k/w high operating temperature: t j = + 125 c meets sae and ece color requirements for the automobile industry for color red packed in tubes for automatic insertion luminous flux, forward voltage and color catego- rized for each tube small mechanical tolerances allow precise usage of external reflectors or lightguides applications exterior lighting dashboard illumination tail-, stop - and turn signals of motor vehicles replaces small incandescent lamps traffic signals and signs parts table absolute maximum ratings t amb = 25 c, unless otherwise specified tlwr8900 , tlwy8900 , part color, luminous intensity angle of half intensity ( ? ) te c h n o l o gy tlwr8900 red, v > 2000 mlm 45 allngap on gaas tlwy8900 ye l l o w, v > 2000 mlm 45 allngap on gaas parameter tes t co nd iti on symbol value unit reverse voltage i r = 100 a v r 10 v dc forward current t amb 85 c i f 70 ma surge forward current t p 10 s i fsm 1 a power dissipation t amb 85 c p v 187 mw junction temperature t j 125 c operating temperature range t amb - 40 to + 110 c
www.vishay.com 2 document number 83212 rev. a1, 02-apr-03 vishay tlw.8900 vishay semiconductors optical and electrical characteristics t amb = 25 c, unless otherwise specified red tlwr8900 yellow tlwy8900 storage temperature range t stg - 55 to + 110 c soldering temperature t 5 s, 1.5 mm from body preheat temperature 100 c/ 30 sec. t sd 260 c thermal resistance junction/ ambient with cathode heatsink of 70 mm 2 r thja 200 k/w parameter test condition symbol min typ. max unit tot al flu x i f = 70 ma, r thja = 200 k/w v 2000 3000 mlm luminous intensity/total flux i f = 70 ma, r thja = 200 k/w i v / v 0.8 mcd/mlm dominant wavelength i f = 70 ma, r thja = 200 k/w d 611 615 634 nm peak wavelength i f = 70 ma, r thja = 200 k/w p 624 nm angle of half intensity i f = 70 ma, r thja = 200 k/w ? 45 deg total included angle 90 % of total flux captured ? 0.9v 75 deg forward voltage i f = 70 ma, r thja = 200 k/w v f 2.0 2.2 2.7 v reverse voltage i r = 10 a v r 10 20 v junction capacitance v r = 0, f = 1 mhz c j 17 pf parameter test condition symbol min typ. max unit tot al flu x i f = 70 ma, r thja = 200 k/w v 2000 3000 mlm luminous intensity/total flux i f = 70 ma, r thja = 200 k/w i v / v 0.8 mcd/mlm dominant wavelength i f = 70 ma, r thja = 200 k/w d 585 590 597 nm peak wavelength i f = 70 ma, r thja = 200 k/w p 594 nm angle of half intensity i f = 70 ma, r thja = 200 k/w ? 45 deg total included angle 90 % of total flux captured ? 0.9v 75 deg forward voltage i f = 70 ma, r thja = 200 k/w v f 1.83 2.1 2.7 v reverse voltage i r = 10 a v r 10 15 v junction capacitance v r = 0, f = 1 mhz c j 17 pf parameter test condition symbol value unit
vishay tlw.8900 document number 83212 rev. a1, 02-apr-03 vishay semiconductors www.vishay.com 3 typical characteristics (t amb = 25 c unless otherwise specified) figure 1. power dissipation vs. ambient temperature figure 2. forward current vs. ambient temperature figure 3. forward current vs. pulse length 0 25 50 75 100 125 150 175 200 0 20406080100120 t amb ? ambient temperature ( c) 18018 p - power dissipation ( mw ) v r thja =200k/w 0 20 40 60 80 100 0 20406080100120 t amb - ambient t emperature ( c) 18019 i - forward current ( ma ) f r thja =200k/w 0.01 0.1 1 10 1 10 100 1000 10000 t p ? pulse length ( ms ) 100 18020 i ? forward current ( ma ) f t p /t=0.01 0.02 0.05 0.1 0.2 1 0.5 t amb 85 c red, yellow f i g u r e 4 . r e l . l u m i n o u s i n t e n s i t y v s . a n g u l a r d i s p l a c e m e n t for 60 emission angle figure 5. percentage total luminous flux vs. total included angle for 60 emission angle figure 6. thermal resistance junction ambient vs. cathode padsize 16006 0.4 0.2 0 0.2 0.4 0.6 0.6 0.9 0 30 10 20 40 50 60 70 80 1.0 0.8 0.7 i ? relative luminous intensity v rel 0 10 20 30 40 50 60 70 80 90 100 0 25 50 75 100 125 total included angle (degrees) 16005 % total luminous flux r in k/w 160 170 180 190 200 210 220 230 0 50 100 150 200 250 300 cathode padsize in mm 2 16009 thja padsize 8 mm 2 per anode pin
www.vishay.com 4 document number 83212 rev. a1, 02-apr-03 vishay tlw.8900 vishay semiconductors figure 7. forward current vs. forward voltage figure 8. rel. luminous flux vs. ambient temperature figure 9. specific luminous flux vs. forward current 0 10 20 30 40 50 60 70 80 90 100 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 2.5 v f ? forward voltag e(v) 15974 f i ?f orward current ( ma ) red yellow 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -40 -20 0 20 40 60 80 100 t amb ? ambient temperature ( c) 18021 i f =70ma red v rel ? relative luminous flux 0.1 1.0 1 10 100 i f - forward current ( ma ) 18022 i - specific luninous flux spec red figure 10. relative luminous flux vs. forward current figure 11. relative intensity vs. wavelength figure 12. forward current vs. forward voltage 0.01 0.10 1.00 10.00 1 10 100 i f ? forward current ( ma ) 15978 i ? relative luminous intensity vrel red 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 570 580 590 600 610 620 630 640 650 660 670 ? wavelength ( nm ) 16007 i ? relative luminous intensity vrel i f = 50 ma red 0 10 20 30 40 50 60 70 80 90 100 1.4 1.5 1.6 1.7 1.8 1.9 2.0 2.1 2.2 2.3 2.4 v f ? forward voltag e(v) 15975 f i - forward current ( ma ) yellow
vishay tlw.8900 document number 83212 rev. a1, 02-apr-03 vishay semiconductors www.vishay.com 5 figure 13. rel. luminous flux vs. ambient temperature figure 14. specific luminous flux vs. forward current figure 15. relative luminous flux vs. forward current 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 -40 -20 0 20 40 60 80 100 15977 i f =70ma yellow v rel ? relative luminous flux t amb ? ambient temperature ( c) 0.1 1.0 1 10 100 i f ? forward current ( ma ) 15981 yellow i ? specific luninous flux spec v rel 0.01 0.10 1.00 10.00 1 10 100 i f - forward current ( ma ) 15979 yellow i - relative luminous intensity figure 16. relative intensity vs. wavelength 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 1.2 540 550 560 570 580 590 600 610 620 630 640 ? wavelength ( nm ) 16008 i ? relative luminous intensity vrel i f = 50 ma yellow
www.vishay.com 6 document number 83212 rev. a1, 02-apr-03 vishay tlw.8900 vishay semiconductors package dimensions in mm 16004
vishay tlw.8900 document number 83212 rev. a1, 02-apr-03 vishay semiconductors www.vishay.com 7 ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national and international statutory requirements. 2. regularly and continuously improve the performance of our products, processes, distribution and operatingsystems with respect to their impact on the health and safety of our employees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosphere which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london amendments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international initiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of continuous improvements to eliminate the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively 2. class i and ii ozone depleting substances in the clean air act amendments of 1990 by the environmental protection agency (epa) in the usa 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applications. all operating parameters must be validated for each customer application by the customer. should the buyer use vishay semiconductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damages, and expenses, arising out of, directly or indirectly, any claim of personal damage, injury or death associated with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany telephone: 49 (0)7131 67 2831, fax number: 49 (0)7131 67 2423
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