drd 4950 h 72 rectifier diode ds 6060 C 1 april 2011 (ln28300 ) 1 / 6 www.dynexsemi.com features ? double side cooling ? high surge capability voltage ratings part and ordering number repetitive peak voltages v r s m v conditions drd 4950 h 72 drd 4950 h 70 drd 4950 h 68 drd 4950 h 66 72 00 70 00 68 00 66 00 v r r m = v r s m - 5 00v ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: d rd 4950 h 72 for a 72 00 v device key parameters v rrm 72 00 v i f(av) 49 50 a i fsm 790 00 a outline type code: h (see package details for further information) fig. 1 package outline
drd 4950 h 72 2 / 6 www.dynexsemi.com current ratings t case = 75c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 6450 a i f(rms) rms value - 10130 a i f continuous (direct) on - state current - 9120 a t case = 100c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 4950 a i f(rms) rms value - 7770 a i f continuous (direct) on - state current - 7000 a surge ratings symbol parameter test conditions max. units i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 1 5 0 c 79.0 ka i 2 t i 2 t for fusing v r = 0 31.21 ma 2 s
- 3 - d rd 4950 h 72 3 / 6 www.dynexsemi.com thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0 0 4 c/w r th(c - h) thermal resistance C case to heatsink double side cooled dc - 0.00 08 c/w t vj virtual junction temperature blocking v drm / vrrm - 40 1 5 0 c t stg storage temperature range - 40 160 c f m clamping force 110 130 kn characteristics symbol parameter test conditions min. max. units v fm forward voltage at 6 0 00 a peak, t case = 1 5 0 c - 1. 71 v i rm peak reverse current at v drm, t case = 1 5 0 c - 6 0 0 ma q s total stored charge i f = 4 000a, di rr /dt = 10 a/s - 10 0 00 c t case = 1 5 0 c, v r =100v v to threshold voltage at t vj = 1 5 0 c - 1.15 v r t slope resistance at t vj = 1 5 0 c - 0.0 94 m ?
drd 4950 h 72 4 / 6 www.dynexsemi.com curves fig.2 maximum forward characteristics fig.3 dissipation curves fig. 4 surge (non - repetitive) forward current vs time fig. 5 maximum (limit) transient thermal impedance - junction to case 0 1000 2000 3000 4000 5000 6000 7000 8000 9000 10000 1 1.2 1.4 1.6 1.8 2 2.2 instantaneous forward current, i f - (a) instantaneous forward voltage,v f - (v) t j =150 c 0 4000 8000 12000 16000 20000 0 1000 2000 3000 4000 5000 mean power dissipation - (w) mean on - state current, i t(av) - (a) 1/2 wave 3 phase 6 phase 20.0 40.0 60.0 80.0 100.0 1 10 100 surge current, itsm - (ka) number of cycles conditons: t case =150 c v r =0 pulse width = 10ms 0 0.001 0.002 0.003 0.004 0.005 0.001 0.01 0.1 1 10 100 thermal impedance zth(j - c) ( c/w ) time ( s ) double side cooled
- 5 - d rd 4950 h 72 5 / 6 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale. package outline type code: h note: some packages may be supplied with gate and or tags.
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