smd type ic www.kexin.com.cn 1 smd type transistors n- and p-channel 30-v (d-s) mosfet KI4544DY absolute maximum ratings t a =25 parameter symbol n-channel p-channel unit drain-source voltage v ds 30 -30 v gate-source voltage v gs 20 20 v continuous drain current (t j = 150 )* t a =25 6.5 5.7 a t a =70 5.4 4.0 a pulsed drain current i dm 20 20 a continuous source current (diode conduction)* i s 1.7 -1.7 a maximum power dissipation* t a =25 w t a =70 w operating junction and storage temperature range t j ,t stg maximum junction-to-ambient * r thja /w *surface mounted on fr4 board, t 10 sec. 52 -55to150 i d p d 2.4 1.5 pin configuration
www.kexin.com.cn 2 smd type ic smd type transistors electrical characteristics t j =25 parameter symbol min typ max unit v ds =v gs ,i d = 250 a n-ch 1 v ds =v gs ,i d = -250 a p-ch -1 v ds =0vv gs = 20 v n-ch 100 v ds =0vv gs = 20 v p-ch 100 v ds = 30v, v gs =0v n-ch 1 v ds = -30v, v gs =0v p-ch -1 v ds =30v,v gs =0v,t j =55 n-ch 5 v ds = -30v, v gs =0v,t j =55 p-ch -5 v ds 5v,v gs =10v n-ch 20 v ds -5 v, v gs =-10v p-ch -20 v ds 5v,v gs =4.5 v n-ch 5 v ds -5 v, v gs =-4.5v p-ch -5 v gs =10v,i d = 6.5a n-ch 0.027 0.035 v gs =-10v,i d = -5.7a p-ch 0.036 0.045 v gs =4.5v,i d = 5.4a n-ch 0.038 0.050 v gs =-4.5v,i d = -4.0a p-ch 0.060 0.090 v ds =15v,i d =6.5a n-ch 15 v ds =-15v,i d = -5.7a p-ch 9 i s =1.7a,v gs = 0 v n-ch 0.75 1.2 i s = -1.7a, v gs = 0 v p-ch -0.75 -1.2 n-channel n-ch 18 35 v ds =15v,v gs = 10v, i d =6.5a p-ch 19 40 n-ch 4.2 p-channel p-ch 4.5 v ds =-15v,v gs =-10v,i d = -5.7a n-ch 3.5 p-ch 3.6 n channel n-ch 13 30 v dd =15v,r l =15 p-ch 13 30 i d =1a,v gen = 10v, r g =6 n-ch 12 30 p-ch 15 30 p-channel n-ch 31 60 v dd =-15v,r l =15 p-ch 37 70 i d =-1a,v gen =-10v,r g =6 n-ch 10 30 p-ch 14 30 i f =1.7a,d i /d t = 100 a/ s n-ch 30 70 i f =-1.7a,d i /d t = 100 a/ s p-ch 35 70 * pulse test; pulse width 300 s, duty cycle 2%. nc source-drain reverse recovery time t rr ns t d(on) t r t d( off) t f fall time turn on time a s v a v na a v gs( th) i gss i dss testconditons q g gate threshold voltage gate body leakage zero gate voltage drain current i d(on) on state drain currenta q gd g fs forward transconductance* rise time turn off delay time r ds(on) drain source on state resistance* diode forward voltage* total gate charge gate source charge gate drain charge v sd q gs KI4544DY
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