drd4350a40 rectifier diode ds5985 - 1 january 2011 (ln28006 ) 1 /8 www.dynexsemi.com features ? double side cooling ? high surge capability applications ? rectification ? free - wheel diode ? dc motor control ? power supplies ? welding ? battery chargers voltage ratings part and ordering number repetitive peak voltages v drm and v drm v conditions drd4350a40 drd4350a39 drd4350a38 DRD4350A37 drd4350a36 drd4350a35 4000 3900 3800 3700 3600 3500 v rsm = v rrm +100v lower voltage grades available. ordering information when ordering, select the required part number shown in the voltage ratings selection table. for example: drd4350 a39 note: please use the complete part number when ordering and quote this number in any future correspondence relating to your order. key parameters v rrm 4000v i f(av) 4346a i fsm 83000a outline type code: a (see package details for further information) fig. 1 package outlines
semiconductor drd4350a40 2 / 8 www.dynexsemi.com current ratings t case = 75c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 5651 a i f(rms) rms value - 8877 a i f continuous (direct) on - state current - 8208 a single side cooled (anode side) i f(av) mean forward current half wave resistive load 3707 a i f(rms) rms value - 5821 a i f continuous (direct) on - state current - 4976 a t case = 100c unless stated otherwise symbol parameter test conditions max. units double side cooled i f(av) mean forward current half wave resistive load 4350 a i f(rms) rms value - 6830 a i f continuous (direct) on - state current - 6160 a single side cooled (anode side) i f(av) mean forward current half wave resistive load 2795 a i f(rms) rms value - 4390 a i f continuous (direct) on - state current - 3640 a
- 3 - semiconductor drd4350a40 3 /8 www.dynexsemi.com surge ratings symbol parameter test conditions max. units i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 150c 66.5 ka i 2 t i 2 t for fusing v r = 50% v rrm - ? sine 22 ma 2 s i fsm surge (non - repetitive) on - state current 10ms half sine, t case = 150c 83 ka i 2 t i 2 t for fusing v r = 0 34.5 ma 2 s thermal and mechanical ratings symbol parameter test conditions min. max. units r th(j - c) thermal resistance C junction to case double side cooled dc - 0.0065 c/w single side cooled anode dc - 0.013 c/w cathode dc - 0.013 c/w r th (c - h) thermal resistance C case to heatsink clamping force 83.0kn double side - 0.001 c/w (with mounting compound) single side - 0.002 c/w t vj virtual junction temperature on - state (conducting) - 160 c reverse (blocking) - 150 c t stg storage temperature range - 55 150 c f m clamping force 75.0 91.0 kn characteristics symbol parameter test conditions min. max. units v fm forward voltage at 3000a peak, t case = 25c - 1.06 v i rm peak reverse current at v drm, t case = 150c - 400 ma v to threshold voltage at t vj = 150c - 0.78 v r t slope resistance at t vj = 150c - 0.0763 m ?
semiconductor drd4350a40 4 / 8 www.dynexsemi.com curves fig.2 maximum (limit) forward characteristics fig.3 power loss curves v tm equation where a = - 0.01591 b = 0.113682 v tm = a + bln (i t ) + c.i t +d. ? i t c = 8.04 x 10 - 5 d = - 0.00284 these values are valid for t j = 150c for i f 500a to 7000a
- 5 - semiconductor drd4350a40 5 /8 www.dynexsemi.com fig.4 stored charge fig.5 reverse recovery current fig.6 maximum (limit) transient thermal impedance C junction to case fig.7 multi - cycle surge current 0 10 20 30 40 50 60 70 80 90 1 10 100 number of pulses surge current i fsm - (ka) conditions : t case = 150oc v r = 0 pulse width = 10ms
semiconductor drd4350a40 6 / 8 www.dynexsemi.com fig.8 sub - cycle surge current 0 20 40 60 80 100 120 140 1 10 100 pulse width, tp - (ms) surge current, i fsm - (ka) 10 20 30 40 50 60 70 80 i 2 t value - (ma 2 s) conditions: t case = 150oc v r = 0 half sine wave
- 7 - semiconductor drd4350a40 7 /8 www.dynexsemi.com package details for further package information, please contact customer services. all dimensions in mm, unless stated otherwise. do not scale.
semiconductor drd4350a40 8 / 8 www.dynexsemi.com important information: this publication is provided for information only and not for resale. the products and information in this publication are intended for use by appropriately trained technical personnel. due to the diversity of product applications, the information contained herein is provided as a general guide only and does n ot constitute any guarantee of suitability for use in a specific application . the user must evaluate the suita bility of the product and the completeness of the product data for the application. the user is responsible for product selection and ensuring all safety and any warning r equirements are met. should additional product information be needed please contact c ustomer service. although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typograp hical errors. the information is provided without any warranty or guarantee of any kind. this publication is an uncontrolled document and is subject to change without notice. when referring to it please ensure that it is the most up to date version and has not been superseded. the products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. the user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failu re or malfunction. the products must not be touched when operating because there is a danger of electrocution or severe burning. always use protective safety equipment such as appropriate shields for the product and wear safety glasses. even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. use outside the product ratings is likely to cause permanent damage to the produ ct. in extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. appropriate ap plication design and safety precautions should always be fo llowed to protect persons and property. product status & product ordering: we annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully appr oved for production. the annotations are as follows: - target information: this is the most tentative form of information and represents a very preliminary specification. no actual design work on the product has been started. preliminary information: the product design is complete and final characterisation for volume production is in progress.the datasheet represents the product as it is now understood but details may change. no annotation: the product has been approved for production and unless otherwise notified by dynex any product ordered will be suppli ed to the current version of the data sheet prevailing at the time of our order acknowledgement. all products and materials are sold and services provided subject to dynexs conditions of sale, which are available on reque st. any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. headquarters operations dynex semiconductor limited doddington road, lincoln, lincolnshire, ln6 3lf united kingdom. phone: +44 (0) 1522 500500 fax: +44 (0) 1522 500550 web: http://www.dynexsemi.com customer service phone: +44 (0) 1522 502753 / 502901 fax: +44 (0) 1522 500020 e - mail: power_solutions@dynexsemi.com ? dynex semiconductor ltd. technical documentation C not for resale .
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