unisonic technologies co., ltd ut4414 preliminary power mosfet www.unisonic.com.tw 1 of 4 copyright ? 2009 unisonic technologies co., ltd qw-r502-378.a n-channel enhancement mode field effect transistor ? description the utc ut4414 is an n-channel enhancement mode fet with excellent trench technology to provide customers perfect r ds(on) and low gate charge. the source leads are separated to allow a kelvin connection to the source, which may be used to bypass the source inductance. this device can be applied in a load switch or in pwm applications. ? features * v dss = 30v * i d =8.5a @v gs =10v * r ds(on) <26m ? @v gs =10v * r ds(on) <40m ? @v gs =4.5v ? symbol gate source drain sop-8 ? ordering information ordering number package packing UT4414G-S08-R sop-8 tape reel (1) r: tape reel (2) s08: sop-8 (3) g: halogen free ut4414g -s08-r (1) packing type (2) package type (3) halogen free
ut4414 preliminary power mosfet unisonic technologies co., ltd 2 of 4 www.unisonic.com.tw qw-r502-378.a ? pin configuration
ut4414 preliminary power mosfet unisonic technologies co., ltd 3 of 4 www.unisonic.com.tw qw-r502-378.a ? absolute maximum rating (t a =25c, unless otherwise specified) parameter symbol ratings unit drain to source voltage v dss 30 v gate to source voltage v gss 20 v t a =25c i d 8.5 a continuous drain current (note 1) t a =70c i d 7.1 a pulsed drain current (note 1) i dm 50 a t a =25c 3 w total power dissipation t a =70c p d 2.1 w junction temperature t j +150 c storage temperature t stg -55 ~ +150 c note: absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device oper ation is not implied. ? thermal data parameter symbol min typ max unit t 10s 31 40 c/w junction to ambient (note 1) steady-state ja 59 75 c/w ? electrical characteristics (t j =25c, unless otherwise specified) parameter symbol test conditions min typ max unit off characteristics drain-source breakdown voltage bv dss v gs =0v, i d =250a 30 v drain-source leakage current i dss v ds =24v,v gs =0v 0.004 1 a gate-source leakage current i gss v ds =0v ,v gs =20v 100 na on characteristics gate threshold voltage v gs(th) v ds = v gs , i d =250a 1 1.9 3 v on state drain current i d(on) v gs =4.5v, v ds =5v 20 a v gs =10v,i d =8.5a 20 26 m ? drain-source on-state resistance r ds(on) v gs =4.5v, i d =5a 31 40 m ? forward transconductance g fs v ds =5v, i d =5a 10 17 s dynamic parameters input capacitance c iss 680 820 pf output capacitance c oss 102 pf reverse transfer capacitance c rss v ds =15v,v gs =0v,f =1mhz 77 pf gate resistance r g v ds =0v,v gs =0v,f =1mhz 3 3.6 ? switching parameters total gate charge (10v) q g 13.84 17 nc total gate charge (4.5v) q g 6.74 8.1 nc gate-source charge q gs 1.84 nc gate-drain charge q gd v ds =15v, v gs =10v, i d =8.5a 3.32 nc turn-on delay time t d(on) 4.5 6.5 ns turn-on rise time t r 4.2 6.3 ns turn-off delay time t d(off) 20.1 30 ns turn-off fall time t f v ds =15v,v gs =10v,r g =3 ? , r l =1.8 ? 4.9 7.5 ns source- drain diode ratings and characteristics maximum body-diode continuous current i s 4.3 a drain-source diode forward voltage v sd i s =1a, v gs =0v 0.76 1 v body diode reverse recovery time t rr i f =8.5a, di/dt=100a/ s 17.2 21 ns body diode reverse recovery charge q rr i f =8.5a, di/dt=100a/ s 8.6 10 nc 1. the value of ja is measured with the device mounted on 1in 2 fr-4 board with 2oz. copper, in a still air environment with t a =25c. the value in any given application de pends on the user's specific boar design. the current rating is based on the t 10s thermal resistance rating. 2. repetitive rating : pulse width limited by t j note: 3. the ja is the sum of the thermal im pedance from junction to lead jl and lead to ambient.
ut4414 preliminary power mosfet unisonic technologies co., ltd 4 of 4 www.unisonic.com.tw qw-r502-378.a utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior writ ten consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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