SQD30N05-20L features ?trenchfet ? power mosfet ? aec-q101 qualified d ?100 % r g and uis tested ? material categorization: ? for definitions of compliance please see notes a. package limited. b. pulse test; pulse width ? 300 s, duty cycle ? 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) 55 r ds(on) ( ? ) at v gs = 10 v 0.020 r ds(on) ( ? ) at v gs = 4.5 v 0.026 i d (a) 30 configuration single d g s n-channel mosfet to-252 s gd top view drain connected to tab ordering information package to-252 lead (pb)-free and halo gen-free SQD30N05-20L-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 55 v gate-source voltage v gs 20 continuous drain current t c = 25 c a i d 30 a t c = 125 c 19 continuous source curr ent (diode conduction) a i s 30 pulsed drain current b i dm 120 single pulse avalanche current l = 0.1 mh i as 20 single pulse avalanche energy e as 20 mj maximum power dissipation b t c = 25 c p d 50 w t c = 125 c 16 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 60 c/w junction-to-case (drain) r thjc 3 automotive n-channel 55 v (d-s) 175 c mosfet www.freescale.net.cn www.freescale.net.cn 1 / 9 SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 1 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 automotive n-channel 55 v (d-s) 175 c mosfet features ?trenchfet ? power mosfet ? aec-q101 qualified d ?100 % r g and uis tested ? material categorization: for definitions of compliance please see www.vishay.com/doc?99912 notes a. package limited. b. pulse test; pulse width d 300 s, duty cycle d 2 %. c. when mounted on 1" squa re pcb (fr-4 material). d. parametric verification ongoing. product summary v ds (v) 55 r ds(on) ( : ) at v gs = 10 v 0.020 r ds(on) ( : ) at v gs = 4.5 v 0.026 i d (a) 30 configuration single d g s n-channel mosfet to-252 s gd top view drain connected to tab ordering information package to-252 lead (pb)-free and halo gen-free SQD30N05-20L-ge3 absolute maximum ratings (t c = 25 c, unless otherwise noted) parameter symbol limit unit drain-source voltage v ds 55 v gate-source voltage v gs 20 continuous drain current t c = 25 c a i d 30 a t c = 125 c 19 continuous source curr ent (diode conduction) a i s 30 pulsed drain current b i dm 120 single pulse avalanche current l = 0.1 mh i as 20 single pulse avalanche energy e as 20 mj maximum power dissipation b t c = 25 c p d 50 w t c = 125 c 16 operating junction and storage temperature range t j , t stg - 55 to + 175 c thermal resistance ratings parameter symbol limit unit junction-to-ambient pcb mount c r thja 60 c/w junction-to-case (drain) r thjc 3
notes a. pulse test; pulse width ? 300 s, duty cycle ? 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. ? ? ? ? ? stresses beyond those listed under absolute maximum ratings ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. ? specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 55 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 55 v --1 a v gs = 0 v v ds = 55 v, t j = 125 c --50 v gs = 0 v v ds = 55 v, t j = 175 c - - 250 on-state drain current a i d(on) v gs = 5 v v ds ??? 5 v 30 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 20 a - 0.016 0.020 ? v gs = 10 v i d = 20 a, t j = 125 c - - 0.035 v gs = 10 v i d = 20 a, t j = 175 c - - 0.043 v gs = 4.5 v i d = 15 a - 0.021 0.026 forward transconductance b g fs v ds = 15 v, i d = 20 a -34-s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 938 1175 pf output capacitance c oss - 203 255 reverse transfer capacitance c rss - 86 110 total gate charge c q g v gs = 5 v v ds = 25 v, i d = 35 a -1218 nc gate-source charge c q gs -4.1- gate-drain charge c q gd -4.8- gate resistance r g f = 1 mhz 1.40 2.89 4.50 ? turn-on delay time c t d(on) v dd = 25 v, r l = 0.71 ? i d ? 35 a, v gen = 10 v, r g = 1 ? -711 ns rise time c t r -1015 turn-off delay time c t d(off) -1827 fall time c t f -58 source-drain diode ratings and characteristics b pulsed current a i sm - - 120 a forward voltage v sd i f = 80 a, v gs = 0 v -1.21.5v www.freescale.net.cn 2 / 9 SQD30N05-20L automotive n-channel 55 v (d-s) 175 c mosfet SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 2 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 notes a. pulse test; pulse width d 300 s, duty cycle d 2 %. b. guaranteed by design , not subject to production testing. c. independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to th e device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operatio nal sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended pe riods may affect device reliability. specifications (t c = 25 c, unless otherwise noted) parameter symbol test condi tions min. typ. max. unit static drain-source breakdown voltage v ds v gs = 0 v, i d = 250 a 55 - - v gate-source threshold voltage v gs(th) v ds = v gs , i d = 250 a 1.5 2 2.5 gate-source leakage i gss v ds = 0 v, v gs = 20 v - - 100 na zero gate voltage drain current i dss v gs = 0 v v ds = 55 v --1 a v gs = 0 v v ds = 55 v, t j = 125 c --50 v gs = 0 v v ds = 55 v, t j = 175 c - - 250 on-state drain current a i d(on) v gs = 5 v v ds t 5 v 30 - - a drain-source on-state resistance a r ds(on) v gs = 10 v i d = 20 a - 0.016 0.020 : v gs = 10 v i d = 20 a, t j = 125 c - - 0.035 v gs = 10 v i d = 20 a, t j = 175 c - - 0.043 v gs = 4.5 v i d = 15 a - 0.021 0.026 forward transconductance b g fs v ds = 15 v, i d = 20 a -34-s dynamic b input capacitance c iss v gs = 0 v v ds = 25 v, f = 1 mhz - 938 1175 pf output capacitance c oss - 203 255 reverse transfer capacitance c rss - 86 110 total gate charge c q g v gs = 5 v v ds = 25 v, i d = 35 a -1218 nc gate-source charge c q gs -4.1- gate-drain charge c q gd -4.8- gate resistance r g f = 1 mhz 1.40 2.89 4.50 : turn-on delay time c t d(on) v dd = 25 v, r l = 0.71 : i d # 35 a, v gen = 10 v, r g = 1 : -711 ns rise time c t r -1015 turn-off delay time c t d(off) -1827 fall time c t f -58 source-drain diode ratings and characteristics b pulsed current a i sm - - 120 a forward voltage v sd i f = 80 a, v gs = 0 v -1.21.5v
typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance on-resistance vs. junction temperature transfer characteristics on-resistance vs. drain current source drain diod e forward voltage 0 8 16 24 32 40 0 2 4 6 8 10 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 10 20 30 40 50 0 5 10 15 20 25 t c = 125 c t c = - 55 c t c = 25 c i d - drain current (a) - transconductance (s) g fs 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 i d =20a v gs =10 v t j - junction temperature (c) (normalized) - on-resistance r ds(on) 0 8 16 24 32 40 012345 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-source v oltage ( v ) - drain current (a) i d 0.00 0.02 0.04 0.06 0.08 0.10 0 8 16 24 32 40 r d s (on) -on-re s i s tance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v sd - source-to-drain v oltage ( v ) - source current (a) i s www.freescale.net.cn 3 / 9 SQD30N05-20L automotive n-channel 55 v (d-s) 175 c mosfet SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 3 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) output characteristics transconductance on-resistance vs. junction temperature transfer characteristics on-resistance vs. drain current source drain diod e forward voltage 0 8 16 24 32 40 0 2 4 6 8 10 i d - drain current (a) v d s -drain-to- s ource voltage (v) v gs = 10 v thru 4 v v gs = 3 v 0 10 20 30 40 50 0 5 10 15 20 25 t c = 125 c t c = - 55 c t c = 25 c i d - drain current (a) - transconductance (s) g fs 0.5 0.9 1.3 1.7 2.1 2.5 - 50 - 25 0 25 50 75 100 125 150 175 i d =20a v gs =10 v t j - junction temperature (c) (normalized) - on-resistance r ds(on) 0 8 16 24 32 40 012345 t c = 25 c t c = 125 c t c = - 55 c v gs - gate-to-source v oltage ( v ) - drain current (a) i d 0.00 0.02 0.04 0.06 0.08 0.10 0 8 16 24 32 40 r d s (on) -on-re s i s tance () i d -drain current (a) v gs = 4.5 v v gs = 10 v 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1 0.01 0.001 0.1 10 100 t j = 25 c t j = 150 c v sd - source-to-drain v oltage ( v ) - source current (a) i s
typical characteristics (t a = 25 c, unless otherwise noted) capacitance on-resistance vs. gate-to-source voltage gate charge threshold voltage drain source breakdown vs . junction temperature 0 300 600 900 1200 1500 0 5 10 15 20 25 30 35 40 45 50 55 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss 0.00 0.04 0.08 0.12 0.16 0.20 0246810 t j = 25 c t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-source v oltage ( v ) 0 1 2 3 4 5 6 0 3 6 9 12 15 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) v d s = 25 v i d = 35 a - 1.2 - 0.9 - 0.6 - 0.3 0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a i d =5ma v ariance ( v ) v gs(th) t j - temperature (c) 55 58 61 64 67 70 - 50 - 25 0 25 50 75 100 125 150 175 i d =1ma v ds - drain-to-source v oltage ( v ) t j - junction temperature (c) www.freescale.net.cn 4 / 9 SQD30N05-20L automotive n-channel 55 v (d-s) 175 c mosfet SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 4 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 typical characteristics (t a = 25 c, unless otherwise noted) capacitance on-resistance vs. gate-to-source voltage gate charge threshold voltage drain source breakdown vs . junction temperature 0 300 600 900 1200 1500 0 5 10 15 20 25 30 35 40 45 50 55 c - capacitance (pf) v d s -drain-to- s ource voltage (v) c i ss c o ss c r ss 0.00 0.04 0.08 0.12 0.16 0.20 0246810 t j = 25 c t j = 150 c - on-resistance ( ) r ds(on) v gs - gate-to-source v oltage ( v ) 0 1 2 3 4 5 6 0 3 6 9 12 15 v gs - g ate-to- s ource voltage (v) q g -total g ate charge (nc) v d s = 25 v i d = 35 a - 1.2 - 0.9 - 0.6 - 0.3 0 0.3 0.6 - 50 - 25 0 25 50 75 100 125 150 175 i d = 250 a i d =5ma v ariance ( v ) v gs(th) t j - temperature (c) 55 58 61 64 67 70 - 50 - 25 0 25 50 75 100 125 150 175 i d =1ma v ds - drain-to-source v oltage ( v ) t j - junction temperature (c)
thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecified limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 10 s , 1 s , dc i d limited 100 m s 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse www.freescale.net.cn 5 / 9 SQD30N05-20L automotive n-channel 55 v (d-s) 175 c mosfet SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 5 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) safe operating area normalized thermal transient impedance, junction-to-ambient 0.01 0.1 1 10 100 1000 0.01 0.1 1 10 100 i d - drain current (a) v d s -drain-to- s ource voltage (v) * v gs > minimum v gs at which r d s (on) i s s pecied limited by r d s (on) * 1 m s i dm limited t c = 25 c s ingle pul s e bvd ss limited 10 m s 100 s 10 s , 1 s , dc i d limited 100 m s 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs ? - normalized transient thermal impedance junction-to-ambient (25 c) ? - normalized transient thermal im pedance junction-to-case (25 c) ? are given for general guidelines only to enable the user to get a ball park indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? ? 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse www.freescale.net.cn 6 / 9 SQD30N05-20L automotive n-channel 55 v (d-s) 175 c mosfet SQD30N05-20L www.vishay.com vishay siliconix s12-1846-rev. c, 30-jul-12 6 document number: 67054 for technical questions, contact: automostechsupport@vishay.com this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 thermal ratings (t a = 25 c, unless otherwise noted) normalized thermal transient impedance, junction-to-case note ? the characteristics shown in the two graphs - normalized transient thermal impedance junction-to-ambient (25 c) - normalized transient thermal im pedance junction-to-case (25 c) are given for general guidelines only to enable the user to get a ?ball park? indication of part capabilities. the data are ext racted from single pulse transient thermal impedance characteristics which are developed from empirical measurements. the latter is valid for the part mounted on printed circ uit board - fr4, size 1" x 1" x 0. 062", double sided with 2 oz. copper, 100 % on both sides. the part ca pabilities can widely vary depending on actual application parameters and operating conditions. vishay siliconix maintains worldwide manufactu ring capability. products may be manufact ured at one of seve ral qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?67054 . 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 normalized effective transient thermal impedance square wave pulse duration (s) duty cycle = 0.5 0.2 0.1 0.05 0.02 single pulse
to-252aa case outline note ? dimension l3 is for reference only. l2 d l1 l3 b b1 e1 e1 d1 a1 c a2 gage plane height (0.5 mm) e b2 e c1 a l h millimeters inches dim. min. max. min. max. a 2.21 2.38 0.087 0.094 a1 0.89 1.14 0.035 0.045 a2 0.030 0.127 0.001 0.005 b 0.71 0.88 0.028 0.035 b1 0.76 1.14 0.030 0.045 b2 5.23 5.44 0.206 0.214 c 0.46 0.58 0.018 0.023 c1 0.46 0.58 0.018 0.023 d 5.97 6.22 0.235 0.245 d1 4.10 4.45 0.161 0.175 e 6.48 6.73 0.255 0.265 e1 4.49 5.50 0.177 0.217 e 2.28 bsc 0.090 bsc e1 4.57 bsc 0.180 bsc h 9.65 10.41 0.380 0.410 l 1.40 1.78 0.055 0.070 l1 0.64 1.02 0.025 0.040 l2 0.89 1.27 0.035 0.050 l3 1.15 1.52 0.040 0.060 ecn: t11-0110-rev. l, 18-apr-11 dwg: 5347 www.freescale.net.cn 7 / 9 SQD30N05-20L automotive n-channel 55 v (d-s) 175 c mosfet document number: 71197 www.vishay.com 18-apr-11 1 this document is subject to change without notice. the products described herein and this document are subject to specific disclaimers, set forth at www.vishay.com/doc?91000 package information vishay siliconix
recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index www.freescale.net.cn 8 / 9 SQD30N05-20L automotive n-channel 55 v (d-s) 175 c mosfet application note 826 vishay siliconix document number: 72594 www.vishay.com revision: 21-jan-08 3 application note recommended minimum pads for dpak (to-252) 0.420 (10.668) recommended mi nimum pads dimensions in inches/(mm) 0.224 (5.690) 0.180 (4.572) 0.055 (1.397) 0.243 (6.180) 0.087 (2.202) 0.090 (2.286) return to index return to index
www.freescale.net.cn disclaimer material category policy all product, product specifications and data are subject to change without notice to improve reliability, function or design or otherwise. freestyle intertechnology, inc., its affiliates, agents, and employees, and all persons acting on it s or their behalf (collectively, ?freestyle?), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. freestyle makes no warranty, representation or guarantee regarding the suitabilit y of the products for any particular purpose or the continuing production of any product. to the maximum extent permitted by applicable law, vi shay disclaims (i) any and all liability arising out of the application or use of any product, (ii) any and all liability, including without limitation specia l, consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular purpose, non-infringement and merchantability. statements regarding the suitability of products for certain type s of applications are based on freestyle?s knowledge of typical requirements that are often placed on freestyle products in generic applications. such statements are not binding statements about the suitability of products for a particular application. it is the customer?s responsib ility to validate that a particular product with the properties described in the product specification is suitable for use in a particular application. parameters provided in datasheets and/or specification s may vary in different applications an d performance may vary over time. all operating parameters, including typical pa rameters, must be validated for each customer application by the customer?s technical experts. product specifications do not expand or otherwise modify freestyle?s terms and conditions of purchase, including but not limited to the warranty expressed therein. except as expressly indicated in writing, freestyle products are not designed for use in medical, life-saving, or life-sustaining applications or for any other application in which the failure of the freestyle product could result in personal injury or death. customers using or selling freestyle products not expressly indicated for use in such applications do so at their own risk and agr ee to fully indemnify and hold freestyle and its distributors harmless from and against an y and all claims, liabilities, expenses and damages arising or resulting in connection with such use or sale, including attorneys fees, even if such claim alleges that vis hay freestyle intertechnology, inc. hereby certi fies that all its products that are id entified as rohs-compliant fulfill the definitions and restrictions defined under directive 2011/65/eu of the european parliament and of the council of june 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (eee) - 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recast, unless otherwis e specified as non-compliant. please note that some vishay documentation may still make reference to rohs directive 2002/95/ ec. we confirm that all the products identified as being compliant to directive 2002 /95/ec conform to directive 2011/65/eu. vishay intertechnology, inc. hereby certifi es that all its products that are identified as ha logen-free follow halogen-free requirements as per jedec js709a stan dards. please note that some vishay documentation may still make reference to the iec 61249-2-21 definition. we co nfirm that all the products identified as being compliant to iec 61249-2-21 conform to jedec js709a standards.
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