CMPDM7120G surface mount n-channel enhancement-mode silicon mosfet description: the central semiconductor CMPDM7120G is an enhancement-mode n-channel field effect transistor, manufactured by the n-channel dmos process, designed for high speed pulsed amplifier and driver applications. this mosfet offers low r ds(on) and low threshold voltage. marking code: c71g maximum ratings: (t a =25c) symbol units drain-source voltage v ds 20 v gate-source voltage v gs 8.0 v continuous drain current (steady state) i d 1.0 a maximum pulsed drain current, tp=10s i dm 4.0 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf , i gssr v gs =8.0v, v ds =0 10 a i dss v ds =20v, v gs =0 10 a bv dss v gs =0, i d =250a 20 v v gs(th) v ds =10v, i d =1.0ma 0.5 1.2 v v sd v gs =0, i s =1.0a 1.1 v r ds(on) v gs =4.5v, i d =0.5a 0.075 0.10 r ds(on) v gs =2.5v, i d =0.5a 0.10 0.14 r ds(on) v gs =1.5v, i d =0.1a 0.17 0.25 g fs v ds =10v, i d =0.5a 4.2 s c rss v ds =10v, v gs =0, f=1.0mhz 45 pf c iss v ds =10v, v gs =0, f=1.0mhz 220 pf c oss v ds =10v, v gs =0, f=1.0mhz 120 pf t on v dd =10v, v gs =5.0v, i d =0.5a 25 ns t off v dd =10v, v gs =5.0v, i d =0.5a 140 ns features: ? esd protection up to 2kv ? low r ds(on) (0.25 max @ v gs =1.5v) ? high current (i d =1.0a) ? logic level compatibility ? small sot-23 package applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment sot-23 case r1 (27-january 2010) www.centralsemi.com ? device is halogen free by design
CMPDM7120G surface mount n-channel enhancement-mode silicon mosfet lead code: 1) gate 2) source 3) drain marking code: c71g sot-23 case - mechanical outline www.centralsemi.com r1 (27-january 2010)
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