CMPDM7003 surface mount n-channel enhancement-mode silicon mosfet description: the central semiconductor CMPDM7003 is an enhancement-mode n-channel field effect transistor, manufactured by the n-channel dmos process, designed for high speed pulsed amplifier and driver applications. this mosfet offers low r ds(on) and esd protection up to 2kv. marking code: c7003 maximum ratings: (t a =25c) symbol units drain-source voltage v ds 50 v drain-gate voltage v dg 50 v gate-source voltage v gs 12 v continuous drain current i d 280 ma maximum pulsed drain current i dm 1.5 a power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics: (t a =25c unless otherwise noted) symbol test conditions min typ max units i gssf, i gssr v gs =5.0v 100 na i gssf, i gssr v gs =10v 2.0 a i gssf, i gssr v gs =12v 2.0 a i dss v ds =50v, v gs =0 50 na bv dss v gs =0, i d =10a 50 v v gs(th) v ds =v gs , i d =250a 0.49 1.0 v v sd v gs =0, i s =115ma 1.4 v r ds(on) v gs =1.8v, i d =50ma 1.6 3.0 r ds(on) v gs =2.5v, i d =50ma 1.3 2.5 r ds(on) v gs =5.0v, i d =50ma 1.1 2.0 g fs v ds =10v, i d =200ma 200 ms c rss v ds =25v, v gs =0, f=1.0mhz 5.0 pf c iss v ds =25v, v gs =0, f=1.0mhz 50 pf c oss v ds =25v, v gs =0, f=1.0mhz 25 pf features: ? esd protection up to 2kv ? low r ds(on) ? low v ds(on) ? low threshold voltage ? fast switching ? logic level compatibility applications: ? load/power switches ? power supply converter circuits ? battery powered portable equipment sot-23 case r1 (27-january 2010) www.centralsemi.com
CMPDM7003 surface mount n-channel enhancement-mode silicon mosfet lead code: 1) gate 2) source 3) drain marking code: c7003 sot-23 case - mechanical outline www.centralsemi.com r1 (27-january 2010)
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