description AMS3407S23RG is the pchannel logic enhancement mode power field effect transistor which is produced using high cell density, dmos tre nch technology. this high density process is especially tailored to minimize onstate resistance. these devices are particularly suited for low voltage application suc h as cellular phone and notebook computer power management, other battery powered ci rcuits, and low inline power loss are required. the product is in a very small o utline surface mount package. pin configuration sot-23-3l 1.gate 2.source 3.drain part marking sot-23-3l y: year code a: process code feature 30v/4.0a, r ds(on) = 45m(typ.) @v gs = 10v 30v/3.2a, r ds(on) = 65m @v gs = 4.5v super high density cell design for extremely low r ds(on) exceptional onresistance and maximum dc current capability sot233l package design 3 1 2 d g s 3 1 2 a7ya
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