semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 5353 issue 1 2N6315 2n6317 v ceo collector ? emitter voltage v cbo collector ? base voltage v ebo emitter ? base voltage i c collector current continuous peak i b base current p d total dissipation @ t c = 25c derate above 25c t stg , t j operating and storage junction temperature range r jc thermal resistance ? junction - case 60v 60v 5v 7a 15a 2a 90w 0.515w/c ?65 to +200c 1.94c/w mechanical data dimensions in mm (inches) 24.13 (0.95) 24.63 (0.97) 14.48 (0.570) 14.99 (0.590) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. 0.71 (0.028) 0.86 (0.034) 1.27 (0.050) 1.91 (0.750) 9.14 (0.360) min. 4.83 (0.190) 5.33 (0.210) 6.35 (0.250) 8.64 (0.340) 11.94 (0.470) 12.70 (0.500) 1 2 complementary silicon medium power transistors applications: designed for general purpose amplifier and switching applications. absolute maximum ratings (t c = 25 c unless otherwise stated) features ? low collector emitter saturation voltage low leakage current excellent dc current gain to?66 (to-213aa) pin 1 ? base pin 2 ? emitter case ? collector complementary transistors 2N6315 (npn) and 2n6317 (pnp)
semelab plc. telephone +44(0)1455 556565. fax +44(0)1455 552612. e-mail: sales@semelab.co.uk website: http://www.semelab.co.uk semelab plc reserves the right to change test conditions, parameter limits and package dimensions without notice. information f urnished by semelab is believed to be both accurate and reliable at the time of going to press. however semelab assumes no responsibility for any errors or omi ssions discovered in its use. semelab encourages customers to verify that datasheets are current before placing orders. document number 5353 issue 1 2N6315 2n6317 electrical characteristics (t case = 25 c unless otherwise stated) collector ? emitter sustaining voltage * collector cut ? off current collector cut ? off current collector cut ? off current emitter cut ? off current dc current gain collector ? emitter saturation voltage base ? emitter saturation voltage base ? emitter on voltage output capacitance current gain ? bandwidth product small signal current gain rise time storage time fall time 60 0.5 0.25 2.0 0.25 1.0 35 20 100 4 1.0 2.0 2.5 1.5 300 4.0 20 0.7 1.0 0.8 v ma ? v pf mhz ? s v ceo(sus) i ceo i cex i cbo i ebo h fe v ce(sat) v be(sat) v be(on) c ob f t h fe t r t s t f notes dynamic characteristics on characteristics * off characteristics parameter test conditions min. typ. max. unit * pulse test: t p = 300s , duty cycle = 2% i c = 100ma i b = 0 v ce = 30v i b = 0 v ce = 60v v be(off) = 1.5v t c = 150 c v cb = 60v i e = 0 v eb = 5v i c = 0 v ce = 4v i c = 0.5a v ce = 4v i c = 2.5a v ce = 4v i c = 7.0a i c = 4a i b = 0.4a i c = 7a i b = 1.75a i c = 7a i b = 1.75a v ce = 4v i c = 2.5a v cb = 10v i e = 0 f = 1mhz v ce = 10v i c = 0.25a f = 1mhz v ce = 4v i c = 0.5a f = 1khz v cc = 30v i c = 2.5a i b1 = i b =0.25a dynamic characteristics
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