r07ds0365ej0100 rev.1.00 page 1 of 6 aug 24, 2011 preliminary datasheet RJK0636JPD silicon n channel power mos fet high speed power switching features ? for automotive application ? aec-q101 compliant ? low on-resistance : r ds(on) = 18 m ? typ. ? capable of 4.5 v gate drive ? low input capacitance : ciss = 750 pf typ outline renesas package code: prss0004zd-c (package name: dpak (s)) 1. gate 2. drain 3. source 4. drain d 2, 4 g1 s 3 1 2 3 4 absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss 60 v gate to source voltage v gss 20 v drain current i d 25 a drain peak current i d(pulse) note1 100 a body-drain diode reverse drain current i dr 25 a avalanche current i ap note2 19 a avalanche energy e ar note2 30.9 mj channel dissipation pch note3 30 w channel temperature tch note4 175 ?c storage temperature tstg ?55 to +150 ?c notes: 1. pw ? 10 ? s, duty cycle ? 1% 2. tch = 25 ?c, rg ? 50 ? 3. tc = 25 ?c 4. aec-q101 compliant thermal impedance characteristics ? channel to case thermal impedance ? ch-c: 5c/w r07ds0365ej0100 rev.1.00 aug 24, 2011
RJK0636JPD preliminary r07ds0365ej0100 rev.1.00 page 2 of 6 aug 24, 2011 electrical characteristics (ta = 25c) item symbol min typ max unit test conditions gate to source leak current i gss ? ? ? 10 ? a v gs = ? 20 v, v ds = 0 zero gate voltage drain current i dss ? ? 1 ? a v ds = 60 v, v gs = 0 gate to source cutoff voltage v gs(off) 1.0 ? 2.0 v i d = 1 ma, v ds = 10 v note5 r ds(on) ? 18 22 m ? i d = 13 a, v gs = 10 v note5 static drain to source on state resistance r ds(on) ? 25 34 m ? i d = 13 a, v gs = 10 v note5 input capacitance ciss ? 750 ? pf output capacitance coss ? 210 ? pf reverse transfer capacitance crss ? 150 ? pf v ds = 10 v, v gs = 0, f = 1 mhz total gate charge qg ? 18 ? nc gate to source charge qgs ? 2.5 ? nc gate to drain charge qgd ? 5.5 ? nc v dd = 25 v, v gs = 10 v, i d = 25 a turn-on delay time t d(on) ? 10 ? ns rise time t r ? 13 ? ns turn-off delay time t d(off) ? 50 ? ns fall time t f ? 13 ? ns i d = 13 a, r l = 2.3 ? , v gs = 10 v, rg = 4.7 ? body?drain diode forward voltage v df ? 0.93 ? v i f = 25 a, v gs = 0 note5 body?drain diode reverse recovery time t rr ? 40 ? ns i f = 25 a, v gs = 0 di f / dt = 100 a/ ? s notes: 5. pulse test
RJK0636JPD preliminary r07ds0365ej0100 rev.1.00 page 3 of 6 aug 24, 2011 main characteristics drain to source voltage v ds (v) drain current i d (a) maximum safe operation area drain to source voltage v ds (v) drain current i d (a) typical output characteristics 11 0 10 1 drain current i d (a) static drain to source on state resistance r ds(on) (m) static drain to source state resistance vs. drain current 100 100 tc = 25c pulse test v gs = 4.5 v 10 v 08 41 6 12 60 40 20 0 gate to source voltage v gs (v) static drain to source on state resistance r ds(on) (m) drain source saturation voltage vs. gate to source voltage 20 100 80 50 40 30 20 10 0 50 100 150 200 power vs. temperature derating channel dissipation pch (w) case temperature tc (c) 0.01 10 0.1 1 0.1 10 1 100 1000 100 typical transfer characteristics drain current i d (a) gate to source voltage v gs (v) 100 10 1 0.1 0.01 0.001 01234 tc = 175c 25c ?40c i d = 13 a pulse test tc = 175c 25c ?40c 100 s 10 s 1 ms tc = 25c 1 shot pulse dc operation pw = 10 ms operation in this area is limited r ds(on) v ds = 10 v pulse test 25 20 15 10 5 0510 v gs = 0 v 3.0 v 2.4 v 2.6 v 2.8 v 10 v 4.5 v tc = 25c pulse test
RJK0636JPD preliminary r07ds0365ej0100 rev.1.00 page 4 of 6 aug 24, 2011 gate charge qg (nc) drain to source voltage v ds (v) gate to source voltage v gs (v) dynamic input characteristics source to drain voltage v sd (v) reverse drain current vs. source to drain voltage reverse drain current i dr (a) channel temperature tch (c) repetitive avalanche energy e ar (mj) avalanche energy vs. channel temperature derating 25 20 15 10 5 0 0.4 0.8 1.2 1.6 2.0 v gs = 0, ?5 v 10 v 50 40 30 20 10 25 50 75 100 125 175150 0 case temperature tc (c) static drain to source on state resistance r ds(on) (m) static drain to source on state resistance vs. temperature capacitance c (pf) drain to source voltage v ds (v) typical capacitance vs. drain to source voltage 0 5 10 15 20 25 30 10000 1000 10 100 i ap = 19 a v dd = 25 v duty < 0.1 % rg 50 tc = 25c v gs = 0 f = 1 mhz ciss coss crss tc = 25c pulse test 75 ? 50 0 50 100 150 200 0 50 25 v gs = 4.5 v 10 v pulse test i d = 13 a 100 80 60 40 20 0 20 16 12 8 4 5 10152025 0 tc = 25c i d = 10 a v ds v dd = 50 v 25 v 10 v v gs v dd = 50 v 25 v 10 v
RJK0636JPD preliminary r07ds0365ej0100 rev.1.00 page 5 of 6 aug 24, 2011 pulse width pw (s) normalized transient thermal impedance vs. pulse width normalized transient thermal impedance s (t) d. u. t rg i ap monitor v ds monitor v dd 50 vin 15 v 0 i d v ds i ap v (br)dss l v dd e ar = l ? i ap 2 ? 2 1 v dss v dss ? v dd avalanche test circuit avalanche waveform t r t d(on) vin 90% 90% 10% 10% vout t d(off) 90% 10% t f switching time test circuit switching time waveform vin monitor d.u.t. vin 10 v r l v ds = 30 v vout monitor rg d = 1 0.05 10 100 1 m 10 m 100 m 10 1 0.1 0.001 0.01 0.2 0.1 0.5 0.01 1shot pulse 0.02 p dm pw t d = pw t ch ? c(t) = s (t) ? ch ? c ch ? c = 5c/w, tc = 25 c
RJK0636JPD preliminary r07ds0365ej0100 rev.1.00 page 6 of 6 aug 24, 2011 package dimensions 6.5 0.3 5.6 0.5 2.3 0.2 0.55 0.1 0 ? 0.25 0.55 0.1 1.5 0.5 5.5 0.5 2.5 0.5 (1.2) 0.8 0.1 2.29 0.5 2.29 0.5 1.2 max (5.1) (5.1) 1.0 max. previous code prss000 4zd- cdpa k(s) / dpak(s)v mass[typ.] 0.28g sc-63 renesas code jeita package code unit: mm package name dpak(s) ordering information orderable part number quan tity shipping container RJK0636JPD-00-j3 3000 pcs taping (sinistrorse)
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