HE8404SG gaalas infrared emitting diode
HE8404SG 2 optical and electrical characteristics (t c = 25c) item symbol min typ max units test conditions optical output power p o 40mw i f = 200 ma peak wavelength l p 790 820 850 nm i f = 200 ma spectral width dl 50nm i f = 200 ma forward voltage v f 2.5 v i f = 200 ma reverse current i r 100 a v r = 3 v capacitance ct 30 pf v r = 0 v, f = 1 mhz rise and fall time tr, tf 10 ns i f = 50 ma typical characteristic curves 0 50 100 150 200 250 0 10 20 30 40 50 60 forward current, i f (ma) optical output power, p o (mw) t c 0 c 25 c 40 c 60 c = - 20 c optical output power vs. forward current forward voltage, v f (v) 0 1.0 2.0 50 200 250 forward current, i f (ma) 0.5 1.5 2.5 100 150 t c = - 20 c 25 c 60 c forward current vs. forward voltage
HE8404SG 3 typical characteristic curves (cont) 20 40 60 wavelength, (nm) relative radiation intensity (%) - 40 - 20 l 20 40 p l 80 100 t c = 25 c wavelength distribution characteristics relative intensity 20 ns/div. current pulse optical pulse t c = 25 c pulse response characteristics 0 20 40 60 80 100 80 60 40 20 0 20 40 60 80 100 0 angle (deg.) relative radiation intensity (%) relative radiation intensity (%) t c = 25 c radiation directional characteristics angle (deg.) 30 60 90
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